74AUP1T98-Q100
Low-power configurable gate with voltage-level translator
Rev. 2 — 5 October 2018
Product data sheet
1. General description
The 74AUP1T98-Q100 provides low-power, low-voltage configurable logic gate functions. The
output state is determined by eight patterns of 3-bit input. The user can choose the logic functions
MUX, AND, OR, NAND, NOR, inverter and buffer. All inputs can be connected to VCC or GND.
This device ensures a very low static and dynamic power consumption across the entire VCC range
from 2.3 V to 3.6 V.
The 74AUP1T98-Q100 is designed for logic-level translation applications with input switching levels
that accept 1.8 V low-voltage CMOS signals, while operating from either a single 2.5 V or 3.3 V
supply voltage.
The wide supply voltage range ensures normal operation as battery voltage drops from 3.6 V to
2.3 V.
This device is fully specified for partial power-down applications using IOFF. The IOFF circuitry
disables the output, preventing the damaging backflow current through the device when it is
powered down.
Schmitt trigger inputs make the circuit tolerant to slower input rise and fall times across the entire
VCC range.
This product has been qualified to the Automotive Electronics Council (AEC) standard Q100
(Grade 1) and is suitable for use in automotive applications.
2. Features and benefits
•
•
•
•
•
•
•
•
•
Automotive product qualification in accordance with AEC-Q100 (Grade 1)
• Specified from -40 °C to +85 °C and from -40 °C to +125 °C
Wide supply voltage range from 2.3 V to 3.6 V
High noise immunity
ESD protection:
• MIL-STD-883, method 3015 Class 3A, exceeds 5000 V
• HBM JESD22-A114F Class 3A, exceeds 5000 V
• MM JESD22-A115-A exceeds 200 V (C = 200 pF, R = 0 Ω)
Low static power consumption; ICC = 1.5 μA (maximum)
Latch-up performance exceeds 100 mA per JESD 78 Class II
Inputs accept voltages up to 3.6 V
Low noise overshoot and undershoot < 10 % of VCC
IOFF circuitry provides partial power-down mode operation
3. Ordering information
Table 1. Ordering information
Type number
Package
74AUP1T98GW-Q100
Temperature range Name
Description
Version
-40 °C to +125 °C
plastic surface-mounted package; 6 leads
SOT363
SC-88
74AUP1T98-Q100
Nexperia
Low-power configurable gate with voltage-level translator
4. Marking
Table 2. Marking
Type number
Marking code
74AUP1T98GW-Q100
aR
5. Functional diagram
3
A
4
1
B
6
C
Fig. 1.
Y
001aad987
Logic symbol
6. Pinning information
6.1. Pinning
74AUP1T98
B
1
6
C
GND
2
5
VCC
A
3
4
Y
001aah839
Fig. 2.
Pin configuration SOT363 (SC-88)
6.2. Pin description
Table 3. Pin description
Symbol
Pin
Description
B
1
data input
GND
2
ground (0 V)
A
3
data input
Y
4
data output
VCC
5
supply voltage
C
6
data input
74AUP1T98_Q100
Product data sheet
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74AUP1T98-Q100
Nexperia
Low-power configurable gate with voltage-level translator
7. Functional description
Table 4. Function table
H = HIGH voltage level; L = LOW voltage level.
Output
Input
C
B
A
Y
L
L
L
H
L
L
H
H
L
H
L
L
L
H
H
L
H
L
L
H
H
L
H
L
H
H
L
H
H
H
H
L
7.1. Logic configurations
Table 5. Function selection table
Logic function
Figure
2-input MUX (inverting)
see Fig. 3
2-input NAND
see Fig. 4
2-input NOR with one input inverted
see Fig. 5
2-input AND with one input inverted
see Fig. 5
2-input NAND with one input inverted
see Fig. 6
2-input OR with one input inverted
see Fig. 6
2-input NOR
see Fig. 7
Buffer
see Fig. 8
Inverter
see Fig. 9
VCC
B
Y
A
C
B
1
A
6
2
5
3
4
VCC
C
A
C
Y
Y
A
1
6
2
5
3
4
001aad991
Fig. 3.
2-input MUX (inverting)
C
Y
001aad992
Fig. 4.
2-input NAND gate
VCC
A
C
Y
A
C
Y
A
1
6
2
5
3
4
VCC
C
Y
B
C
Y
B
C
Y
B
1
6
2
5
3
4
001aad993
Fig. 5.
Product data sheet
Y
001aad994
2-input AND gate with input A inverted or 2input NOR gate with input C inverted
74AUP1T98_Q100
C
Fig. 6.
2-input OR gate with input B inverted or 2-input
NAND gate with input C inverted
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74AUP1T98-Q100
Nexperia
Low-power configurable gate with voltage-level translator
VCC
B
B
C
Y
1
6
2
5
3
4
VCC
C
C
Y
Y
1
6
2
5
3
4
001aad995
Fig. 7.
C
Y
001aad996
2-input NOR gate
Fig. 8.
Buffer
VCC
B
B
Y
1
6
2
5
3
4
Y
001aad997
Fig. 9.
Inverter
8. Limiting values
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol
Parameter
Min
Max
Unit
VCC
supply voltage
-0.5
+4.6
V
IIK
input clamping current
-50
-
VI
input voltage
IOK
output clamping current
VO < 0 V
-0.5
+4.6
-50
-
VO
output voltage
Active mode and Power-down mode
-0.5
+4.6
V
IO
output current
VO = 0 V to VCC
-
±20
mA
ICC
supply current
-
+50
mA
IGND
ground current
-50
-
mA
Tstg
storage temperature
-65
+150
°C
Ptot
total power dissipation
-
250
mW
[1]
[2]
Conditions
VI < 0 V
[1]
Tamb = -40 °C to +125 °C
[1]
[2]
mA
V
mA
The minimum input and output voltage ratings may be exceeded if the input and output current ratings are observed.
For SC-88 package: above 87.5 °C the value of Ptot derates linearly with 4.0 mW/K.
9. Recommended operating conditions
Table 7. Recommended operating conditions
Symbol Parameter
Conditions
Min
Max
Unit
VCC
supply voltage
2.3
3.6
V
VI
input voltage
0
3.6
V
VO
output voltage
Active mode
0
VCC
V
Power-down mode; VCC = 0 V
0
3.6
V
-40
+125
°C
Tamb
ambient temperature
74AUP1T98_Q100
Product data sheet
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Nexperia
Low-power configurable gate with voltage-level translator
10. Static characteristics
Table 8. Static characteristics
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Tamb = 25 °C
VT+
positive-going threshold
voltage
VCC = 2.3 V to 2.7 V
0.60
-
1.10
V
VCC = 3.0 V to 3.6 V
0.75
-
1.16
V
VT-
negative-going threshold
voltage
VCC = 2.3 V to 2.7 V
0.35
-
0.60
V
VCC = 3.0 V to 3.6 V
0.50
-
0.85
V
hysteresis voltage
(VH = VT+ - VT-)
VCC = 2.3 V to 2.7 V
0.23
-
0.60
V
VCC = 3.0 V to 3.6 V
0.25
-
0.56
V
VCC - 0.1
-
-
V
IO = -2.3 mA; VCC = 2.3 V
2.05
-
-
V
IO = -3.1 mA; VCC = 2.3 V
1.9
-
-
V
IO = -2.7 mA; VCC = 3.0 V
2.72
-
-
V
IO = -4.0 mA; VCC = 3.0 V
2.6
-
-
V
IO = 20 μA; VCC = 2.3 V to 3.6 V
-
-
0.10
V
IO = 2.3 mA; VCC = 2.3 V
-
-
0.31
V
IO = 3.1 mA; VCC = 2.3 V
-
-
0.44
V
IO = 2.7 mA; VCC = 3.0 V
-
-
0.31
V
IO = 4.0 mA; VCC = 3.0 V
-
-
0.44
V
VH
VOH
HIGH-level output voltage
VI = VT+ or VTIO = -20 μA; VCC = 2.3 V to 3.6 V
VOL
LOW-level output voltage
VI = VT+ or VT-
II
input leakage current
VI = GND to 3.6 V; VCC = 0 V to 3.6 V
-
-
±0.1
μA
IOFF
power-off leakage current
VI or VO = 0 V to 3.6 V; VCC = 0 V
-
-
±0.1
μA
ΔIOFF
additional power-off
leakage current
VI or VO = 0 V to 3.6 V;
VCC = 0 V to 0.2 V
-
-
±0.2
μA
ICC
supply current
VI = GND or VCC; IO = 0 A;
VCC = 2.3 V to 3.6 V
-
-
1.2
μA
CI
input capacitance
VCC = 0 V to 3.6 V; VI = GND or VCC
-
0.8
-
pF
CO
output capacitance
VO = GND; VCC = 0 V
-
1.7
-
pF
74AUP1T98_Q100
Product data sheet
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74AUP1T98-Q100
Nexperia
Low-power configurable gate with voltage-level translator
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Tamb = -40 °C to +85 °C
VT+
positive-going threshold
voltage
VCC = 2.3 V to 2.7 V
0.60
-
1.10
V
VCC = 3.0 V to 3.6 V
0.75
-
1.19
V
VT-
negative-going threshold
voltage
VCC = 2.3 V to 2.7 V
0.35
-
0.60
V
VCC = 3.0 V to 3.6 V
0.50
-
0.85
V
hysteresis voltage
(VH = VT+ - VT-)
VCC = 2.3 V to 2.7 V
0.10
-
0.60
V
VCC = 3.0 V to 3.6 V
0.15
-
0.56
V
VCC - 0.1
-
-
V
IO = -2.3 mA; VCC = 2.3 V
1.97
-
-
V
IO = -3.1 mA; VCC = 2.3 V
1.85
-
-
V
IO = -2.7 mA; VCC = 3.0 V
2.67
-
-
V
IO = -4.0 mA; VCC = 3.0 V
2.55
-
-
V
IO = 20 μA; VCC = 2.3 V to 3.6 V
-
-
0.1
V
IO = 2.3 mA; VCC = 2.3 V
-
-
0.33
V
IO = 3.1 mA; VCC = 2.3 V
-
-
0.45
V
IO = 2.7 mA; VCC = 3.0 V
-
-
0.33
V
IO = 4.0 mA; VCC = 3.0 V
-
-
0.45
V
VH
VOH
HIGH-level output voltage
VI = VT+ or VTIO = -20 μA; VCC = 2.3 V to 3.6 V
VOL
LOW-level output voltage
VI = VT+ or VT-
II
input leakage current
VI = GND to 3.6 V; VCC = 0 V to 3.6 V
-
-
±0.5
μA
IOFF
power-off leakage current
VI or VO = 0 V to 3.6 V; VCC = 0 V
-
-
±0.5
μA
ΔIOFF
additional power-off
leakage current
VI or VO = 0 V to 3.6 V;
VCC = 0 V to 0.2 V
-
-
±0.5
μA
ICC
supply current
VI = GND or VCC; IO = 0 A;
VCC = 2.3 V to 3.6 V
-
-
1.5
μA
ΔICC
additional supply current
VCC = 2.3 V to 2.7 V; IO = 0 A
[1]
-
-
4
μA
VCC = 3.0 V to 3.6 V; IO = 0 A
[2]
-
-
12
μA
74AUP1T98_Q100
Product data sheet
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74AUP1T98-Q100
Nexperia
Low-power configurable gate with voltage-level translator
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Tamb = -40 °C to +125 °C
VT+
positive-going threshold
voltage
VCC = 2.3 V to 2.7 V
0.60
-
1.10
V
VCC = 3.0 V to 3.6 V
0.75
-
1.19
V
VT-
negative-going threshold
voltage
VCC = 2.3 V to 2.7 V
0.33
-
0.64
V
VCC = 3.0 V to 3.6 V
0.46
-
0.85
V
hysteresis voltage
(VH = VT+ - VT-)
VCC = 2.3 V to 2.7 V
0.10
-
0.60
V
VCC = 3.0 V to 3.6 V
0.15
-
0.56
V
VCC - 0.11
-
-
V
IO = -2.3 mA; VCC = 2.3 V
1.77
-
-
V
IO = -3.1 mA; VCC = 2.3 V
1.67
-
-
V
IO = -2.7 mA; VCC = 3.0 V
2.40
-
-
V
IO = -4.0 mA; VCC = 3.0 V
2.30
-
-
V
IO = 20 μA; VCC = 2.3 V to 3.6 V
-
-
0.11
V
IO = 2.3 mA; VCC = 2.3 V
-
-
0.36
V
IO = 3.1 mA; VCC = 2.3 V
-
-
0.50
V
IO = 2.7 mA; VCC = 3.0 V
-
-
0.36
V
IO = 4.0 mA; VCC = 3.0 V
-
-
0.50
V
VH
VOH
HIGH-level output voltage
VI = VT+ or VTIO = -20 μA; VCC = 2.3 V to 3.6 V
VOL
LOW-level output voltage
VI = VT+ or VT-
II
input leakage current
VI = GND to 3.6 V; VCC = 0 V to 3.6 V
-
-
±0.75
μA
IOFF
power-off leakage current
VI or VO = 0 V to 3.6 V; VCC = 0 V
-
-
±0.75
μA
ΔIOFF
additional power-off
leakage current
VI or VO = 0 V to 3.6 V;
VCC = 0 V to 0.2 V
-
-
±0.75
μA
ICC
supply current
VI = GND or VCC; IO = 0 A;
VCC = 2.3 V to 3.6 V
-
-
3.5
μA
ΔICC
additional supply current
VCC = 2.3 V to 2.7 V; IO = 0 A
[1]
-
-
7
μA
VCC = 3.0 V to 3.6 V; IO = 0 A
[2]
-
-
22
μA
[1]
[2]
One input at 0.3 V or 1.1 V, other input at VCC or GND.
One input at 0.45 V or 1.2 V, other input at VCC or GND.
74AUP1T98_Q100
Product data sheet
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Nexperia
Low-power configurable gate with voltage-level translator
11. Dynamic characteristics
Table 9. Dynamic characteristics
Voltages are referenced to GND (ground = 0 V); for test circuit see Fig. 11.
Symbol Parameter
Conditions
25 °C
-40 °C to +125 °C
Unit
Min
Typ [1]
Max
Min
Max
(85 °C)
Max
(125 °C)
CL = 5 pF
2.0
3.6
5.7
0.5
6.8
7.5
ns
CL = 10 pF
2.5
4.2
6.3
1.0
7.9
8.7
ns
CL = 15 pF
2.9
4.6
6.9
1.0
8.7
9.6
ns
CL = 30 pF
3.9
5.8
8.3
1.5
10.8
11.9
ns
CL = 5 pF
1.7
3.4
5.6
0.5
6.0
6.6
ns
CL = 10 pF
2.1
4.0
6.3
1.0
7.1
7.9
ns
CL = 15 pF
2.5
4.5
6.9
1.0
7.9
8.7
ns
CL = 30 pF
3.4
5.6
8.4
1.5
10.0
11.0
ns
CL = 5 pF
1.3
3.2
5.2
0.5
5.5
6.1
ns
CL = 10 pF
1.8
3.7
5.9
1.0
6.5
7.2
ns
CL = 15 pF
2.2
4.2
6.5
1.0
7.4
8.2
ns
CL = 30 pF
3.1
5.4
7.9
1.5
9.5
10.5
ns
CL = 5 pF
2.0
2.9
4.1
0.5
8.0
8.8
ns
CL = 10 pF
2.4
3.5
4.8
1.0
8.5
9.4
ns
CL = 15 pF
2.8
3.9
5.4
1.0
9.1
10.1
ns
CL = 30 pF
3.6
5.1
6.9
1.5
9.8
10.8
ns
CL = 5 pF
1.5
2.8
4.4
0.5
5.3
5.9
ns
CL = 10 pF
2.0
3.4
5.1
1.0
6.1
6.8
ns
CL = 15 pF
2.4
3.9
5.7
1.0
6.8
7.5
ns
CL = 30 pF
3.4
5.0
7.2
1.5
8.5
9.4
ns
CL = 5 pF
1.3
2.8
4.4
0.5
4.7
5.2
ns
CL = 10 pF
1.7
3.3
5.2
1.0
5.7
6.3
ns
CL = 15 pF
2.1
3.8
5.8
1.0
6.2
6.9
ns
CL = 30 pF
3.1
5.0
7.2
1.5
7.8
8.6
ns
VCC = 2.3 V to 2.7 V; VI = 1.65 V to 1.95 V
tpd
propagation delay A, B, C to Y; see Fig. 10
[2]
VCC = 2.3 V to 2.7 V; VI = 2.3 V to 2.7 V
tpd
propagation delay A, B, C to Y; see Fig. 10
[2]
VCC = 2.3 V to 2.7 V; VI = 3.0 V to 3.6 V
tpd
propagation delay A, B, C to Y; see Fig. 10
[2]
VCC = 3.0 V to 3.6 V; VI = 1.65 V to 1.95 V
tpd
propagation delay A, B, C to Y; see Fig. 10
[2]
VCC = 3.0 V to 3.6 V; VI = 2.3 V to 2.7 V
tpd
propagation delay A, B, C to Y; see Fig. 10
[2]
VCC = 3.0 V to 3.6 V; VI = 3.0 V to 3.6 V
tpd
propagation delay A, B, C to Y; see Fig. 10
74AUP1T98_Q100
Product data sheet
[2]
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74AUP1T98-Q100
Nexperia
Low-power configurable gate with voltage-level translator
Symbol Parameter
Conditions
25 °C
-40 °C to +125 °C
Unit
Min
Typ [1]
Max
Min
Max
(85 °C)
Max
(125 °C)
VCC = 2.3 V to 2.7 V
-
3.6
-
-
-
-
pF
VCC = 3.0 V to 3.6 V
-
4.3
-
-
-
-
pF
Tamb = 25 °C
CPD
[1]
[2]
[3]
power dissipation
capacitance
fi = 1 MHz; VI = GND to VCC [3]
All typical values are measured at nominal VCC.
tpd is the same as tPLH and tPHL
CPD is used to determine the dynamic power dissipation (PD in μW).
2
2
PD = CPD x VCC x fi x N + Σ(CL x VCC x fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in V;
N = number of inputs switching;
2
Σ(CL x VCC x fo) = sum of the outputs.
11.1. Waveforms and test circuits
VI
A, B, C input
VM
VM
GND
t PHL
t PLH
VOH
VM
Y output
VM
VOL
t PLH
t PHL
VOH
Y output
VM
VM
VOL
001aab593
Measurement points are given in Table 10.
VOL and VOH are typical output voltage levels that occur with the output load.
Fig. 10. Input A, B and C to output Y propagation delay times
Table 10. Measurement points
Supply voltage
Output
Input
VCC
VM
VM
VI
tr = tf
2.3 V to 3.6 V
0.5 x VCC
0.5 x VI
1.65 V to 3.6 V
≤ 3.0 ns
74AUP1T98_Q100
Product data sheet
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74AUP1T98-Q100
Nexperia
Low-power configurable gate with voltage-level translator
VCC
G
VI
DUT
VEXT
5 kΩ
VO
RT
CL
RL
001aac521
Test data is given in Table 11.
Definitions for test circuit:
RL = Load resistance.
CL = Load capacitance including jig and probe capacitance.
RT = Termination resistance should be equal to the output impedance Zo of the pulse generator.
VEXT = External voltage for measuring switching times.
Fig. 11. Test circuit for measuring switching times
Table 11. Test data
Supply voltage
Load
VCC
CL
RL [1]
tPLH, tPHL
tPZH, tPHZ
tPZL, tPLZ
2.3 V to 3.6 V
5 pF, 10 pF, 15 pF and 30 pF
5 kΩ or 1 MΩ
open
GND
2 × VCC
[1]
VEXT
For measuring enable and disable times RL = 5 kΩ.
For measuring propagation delays, setup and hold times and pulse width RL = 1 MΩ.
74AUP1T98_Q100
Product data sheet
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74AUP1T98-Q100
Nexperia
Low-power configurable gate with voltage-level translator
12. Package outline
Plastic surface-mounted package; 6 leads
SOT363
D
B
E
y
A
X
HE
6
5
v M A
4
Q
pin 1
index
A
1
2
e1
A1
3
bp
c
Lp
w M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.1
0.8
0.1
0.30
0.20
0.25
0.10
2.2
1.8
1.35
1.15
1.3
0.65
2.2
2.0
0.45
0.15
0.25
0.15
0.2
0.2
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
SOT363
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
04-11-08
06-03-16
SC-88
Fig. 12. Package outline SOT363 (SC-88)
74AUP1T98_Q100
Product data sheet
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Nexperia
Low-power configurable gate with voltage-level translator
13. Abbreviations
Table 12. Abbreviations
Acronym
Description
CDM
Charged Device Model
CMOS
Complementary Metal-Oxide Semiconductor
DUT
Device Under Test
ESD
ElectroStatic Discharge
HBM
Human Body Model
MIL
Military
MM
Machine Model
14. Revision history
Table 13. Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
74AUP1T98_Q100 v.2
20181005
Product data sheet
-
74AUP1T98_Q100 v.1
Modifications:
•
•
74AUP1T98_Q100 v.1
74AUP1T98_Q100
Product data sheet
The format of this data sheet has been redesigned to comply with the identity guidelines of
Nexperia.
Legal texts have been adapted to the new company name where appropriate.
20140519
Product data sheet
-
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 5 October 2018
-
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12 / 14
74AUP1T98-Q100
Nexperia
Low-power configurable gate with voltage-level translator
equipment, nor in applications where failure or malfunction of an Nexperia
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15. Legal information
Data sheet status
Document status
[1][2]
Product
status [3]
Definition
Quick reference data — The Quick reference data is an extract of the
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document, and as such is not complete, exhaustive or legally binding.
Objective [short]
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Development
This document contains data from
the objective specification for
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Preliminary [short]
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Qualification
This document contains data from
the preliminary specification.
Applications — Applications that are described herein for any of these
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or warranty that such applications will be suitable for the specified use
without further testing or modification.
Product [short]
data sheet
Production
This document contains the product
specification.
[1]
[2]
[3]
Please consult the most recently issued document before initiating or
completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have
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Suitability for use in automotive applications — This Nexperia product
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74AUP1T98_Q100
Product data sheet
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Rev. 2 — 5 October 2018
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74AUP1T98-Q100
Nexperia
Low-power configurable gate with voltage-level translator
Contents
1. General description...................................................... 1
2. Features and benefits.................................................. 1
3. Ordering information....................................................1
4. Marking.......................................................................... 2
5. Functional diagram.......................................................2
6. Pinning information......................................................2
6.1. Pinning.........................................................................2
6.2. Pin description............................................................. 2
7. Functional description................................................. 3
7.1. Logic configurations.....................................................3
8. Limiting values............................................................. 4
9. Recommended operating conditions..........................4
10. Static characteristics..................................................5
11. Dynamic characteristics.............................................8
11.1. Waveforms and test circuits.......................................9
12. Package outline........................................................ 11
13. Abbreviations............................................................ 12
14. Revision history........................................................12
15. Legal information......................................................13
©
Nexperia B.V. 2018. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 5 October 2018
74AUP1T98_Q100
Product data sheet
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Rev. 2 — 5 October 2018
©
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