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74AXP1G57GNH

74AXP1G57GNH

  • 厂商:

    NEXPERIA(安世)

  • 封装:

    XSON6_1X0.9MM

  • 描述:

    多功能集成电路门 XSON6

  • 数据手册
  • 价格&库存
74AXP1G57GNH 数据手册
74AXP1G57 Low-power configurable multiple function gate Rev. 3 — 16 September 2015 Product data sheet 1. General description The 74AXP1G57 is a configurable multiple function gate with Schmitt-trigger inputs. The device can be configured as any of the following logic functions AND, OR, NAND, NOR, XNOR, inverter and buffer. All inputs can be connected directly to VCC or GND. This device ensures very low static and dynamic power consumption across the entire VCC range from 0.7 V to 2.75 V. This device is fully specified for partial power down applications using IOFF. The IOFF circuitry disables the output, preventing the potentially damaging backflow current through the device when it is powered down. 2. Features and benefits               Wide supply voltage range from 0.7 V to 2.75 V Low input capacitance; CI = 0.5 pF (typical) Low output capacitance; CO = 1.0 pF (typical) Low dynamic power consumption; CPD = 2.7 pF at VCC = 1.2 V (typical) Low static power consumption; ICC = 0.6 A (85 C maximum) High noise immunity Complies with JEDEC standard:  JESD8-12A.01 (1.1 V to 1.3 V)  JESD8-11A.01 (1.4 V to 1.6 V)  JESD8-7A (1.65 V to 1.95 V)  JESD8-5A.01 (2.3 V to 2.7 V) ESD protection:  HBM ANSI/ESDA/JEDEC JS-001 Class 2 exceeds 2 kV  CDM JESD22-C101E exceeds 1000 V Latch-up performance exceeds 100 mA per JESD 78 Class II Inputs accept voltages up to 2.75 V Low noise overshoot and undershoot < 10 % of VCC IOFF circuitry provides partial power-down mode operation Multiple package options Specified from 40 C to +85 C 74AXP1G57 Nexperia Low-power configurable multiple function gate 3. Ordering information Table 1. Ordering information Type number Package Temperature range Name Description Version 74AXP1G57GM 40 C to +85 C XSON6 plastic extremely thin small outline package; no leads; SOT886 6 terminals; body 1  1.45  0.5 mm 74AXP1G57GN 40 C to +85 C XSON6 extremely thin small outline package; no leads; 6 terminals; body 0.9  1.0  0.35 mm SOT1115 74AXP1G57GS 40 C to +85 C XSON6 extremely thin small outline package; no leads; 6 terminals; body 1.0  1.0  0.35 mm SOT1202 74AXP1G57GX 40 C to +85 C X2SON6 plastic thermal extremely thin small outline package; no leads; 6 terminals; body 1  0.8  0.35 mm SOT1255 4. Marking Table 2. Marking Type number Marking code[1] 74AXP1G57GM RC 74AXP1G57GN RC 74AXP1G57GS RC 74AXP1G57GX RC [1] The pin 1 indicator is located on the lower left corner of the device, below the marking code. 5. Functional diagram $   % & Fig 1.  <  DDE Logic symbol 74AXP1G57 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 16 September 2015 © Nexperia B.V. 2017. All rights reserved 2 of 18 74AXP1G57 Nexperia Low-power configurable multiple function gate 6. Pinning information 6.1 Pinning $;3* $;3* %   % &   $;3* & %  *1'   9&& *1'   9&& *1' $   < $   DDD Pin configuration SOT886  <  < DDD Fig 3. Pin configuration SOT1115 and SOT1202 9&&   $ DDD 7UDQVSDUHQWWRSYLHZ 7UDQVSDUHQWWRSYLHZ 7UDQVSDUHQWWRSYLHZ Fig 2. &  Fig 4. Pin configuration SOT1255 (X2SON6) 6.2 Pin description Table 3. Pin description Symbol Pin Description B 1 data input GND 2 ground (0 V) A 3 data input Y 4 data output VCC 5 supply voltage C 6 data input 7. Functional description Table 4. Function table[1] Input Output C B A Y L L L H L L H L L H L H L H H L H L L L H L H L H H L H H H H H [1] H = HIGH voltage level; L = LOW voltage level. 74AXP1G57 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 16 September 2015 © Nexperia B.V. 2017. All rights reserved 3 of 18 74AXP1G57 Nexperia Low-power configurable multiple function gate 7.1 Logic configurations Table 5. Function selection table Logic function Figure 2-input AND see Figure 5 2-input AND with both inputs inverted see Figure 8 2-input NAND with inverted input see Figure 6 and Figure 7 2-input OR with inverted input see Figure 6 and Figure 7 2-input NOR see Figure 8 2-input NOR with both inputs inverted see Figure 5 2-input XNOR see Figure 9 Inverter see Figure 10 Buffer see Figure 11 9&& % & % & < % <       9&& % & & < % & < % <       DDE Fig 5. 2-input AND gate or 2-input NOR gate with both inputs inverted & < DDE Fig 6. 2-input NAND gate with input B inverted or 2-input OR gate with inverted C input 9&& 9&& $ & $ & < $ <       $ & & < $ & < < $       DDE Fig 7. 2-input NAND gate with input C inverted or 2-input OR gate with inverted A input & < DDE Fig 8. 2-input NOR gate or 2-input AND gate with both inputs inverted 9&& 9&& % % & <       & $ < $ <       DDE DDE Fig 9. 2-input XNOR gate 74AXP1G57 Product data sheet < Fig 10. Inverter All information provided in this document is subject to legal disclaimers. Rev. 3 — 16 September 2015 © Nexperia B.V. 2017. All rights reserved 4 of 18 74AXP1G57 Nexperia Low-power configurable multiple function gate 9&& % % <       < DDE Fig 11. Buffer 8. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V). Symbol Parameter VCC supply voltage IIK input clamping current Conditions Min Max Unit 0.5 3.3 V 50 - [1] 0.5 3.3 50 - [1] 0.5 3.3 V - 20 mA 50 mA VI < 0 V VI input voltage IOK output clamping current VO output voltage IO output current ICC supply current - VO < 0 V VO = 0 V to VCC mA V mA IGND ground current 50 - mA Tstg storage temperature 65 +150 C Ptot total power dissipation - 250 mW [1] Tamb = 40 C to +85 C The minimum input and output voltage ratings may be exceeded if the input and output current ratings are observed. 9. Recommended operating conditions Table 7. Recommended operating conditions Voltages are referenced to GND (ground = 0 V). Symbol Parameter VCC supply voltage VI input voltage VO output voltage Tamb Conditions Product data sheet Max Unit 0.7 2.75 V 0 2.75 V Active mode 0 VCC V Power-down mode; VCC = 0 V 0 2.75 V 40 +85 C ambient temperature 74AXP1G57 Min All information provided in this document is subject to legal disclaimers. Rev. 3 — 16 September 2015 © Nexperia B.V. 2017. All rights reserved 5 of 18 74AXP1G57 Nexperia Low-power configurable multiple function gate 10. Static characteristics Table 8. Static characteristics At recommended operating conditions, unless otherwise specified; voltages are referenced to GND (ground = 0 V). Symbol VT+ Parameter Tamb = 40 C to +85 C Conditions Min Typ 25 C Max 25 C Max 85 C 0.3VCC - 0.8VCC 0.8VCC V VCC = 1.1 V to 1.95 V 0.4VCC - 0.7VCC 0.7VCC V VCC = 2.3 V to 2.7 V 0.9 - 1.7 1.7 V 0.2VCC - 0.7VCC 0.7VCC V VCC = 1.1 V to 1.95 V 0.3VCC - 0.6VCC 0.6VCC V VCC = 2.3 V to 2.7 V 0.7 - 1.5 1.5 V VCC = 0.75 V to 0.85 V 0.06VCC - 0.5VCC 0.5VCC V VCC = 1.1 V to 1.95 V 0.1VCC - 0.4VCC 0.4VCC V VCC = 2.3 V to 2.7 V 0.2 - 1.0 1.0 V - 0.69 - - V IO = 100 A; VCC = 0.75 V 0.65 - - - V IO = 2 mA; VCC = 1.1 V 0.825 - - - V positive-going see Figure 12 and Figure 13 threshold voltage VCC = 0.75 V to 0.85 V negative-going see Figure 12 and Figure 13 threshold voltage VCC = 0.75 V to 0.85 V VT hysteresis voltage VH VOH HIGH-level output voltage LOW-level output voltage VOL Unit see Figure 12 and Figure 13 IO = 20 A; VCC = 0.7 V IO = 3 mA; VCC = 1.4 V 1.05 - - - V IO = 4.5 mA; VCC = 1.65 V 1.2 - - - V IO = 8 mA; VCC = 2.3 V 1.7 - - - V IO = 20 A; VCC = 0.7 V - 0.01 - - V IO = 100 A; VCC = 0.75 V - - 0.1 0.1 V IO = 2 mA; VCC = 1.1 V - - 0.275 0.275 V IO = 3 mA; VCC = 1.4 V - - 0.35 0.35 V IO = 4.5 mA; VCC = 1.65 V - - 0.45 0.45 V - - 0.7 0.7 V II input leakage current VI = 0 V to 2.75 V; VCC = 0 V to 2.75 V IO = 8 mA; VCC = 2.3 V [1] - 0.001 0.1 0.5 A IOFF power-off leakage current VI or VO = 0 V to 2.75 V; VCC = 0 V [1] - 0.01 0.1 0.5 A IOFF additional power-off leakage current VI or VO = 0 V or 2.75 V; VCC = 0 V to 0.1 V [1] - 0.02 0.1 0.5 A ICC supply current VI = 0 V or VCC; IO = 0 A [1] - 0.01 0.3 0.6 A ICC additional supply VI = VCC  0.5 V; IO = 0 A; current VCC = 2.5 V - 2 100 150 A [1] All typical values are measured at VCC = 1.2 V. 74AXP1G57 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 16 September 2015 © Nexperia B.V. 2017. All rights reserved 6 of 18 74AXP1G57 Nexperia Low-power configurable multiple function gate 10.1 Waveform transfer characteristics 92 97 9, 9+ 97 9, 9+ 97 97 92 PQD PQD Fig 12. Transfer characteristic Fig 13. Definition of VT+, VT, and VH 11. Dynamic characteristics Table 9. Dynamic characteristics Voltages are referenced to GND (ground = 0 V); for test circuit, see Figure 20. Symbol Parameter tpd propagation delay Tamb = 25 C Conditions Tamb = 40 C to +85 C Unit Min Typ[1] Max Min Max VCC = 0.75 V to 0.85 V 3.5 13 50 2.9 125 ns VCC = 1.1 V to 1.3 V 1.8 5.0 8.4 1.6 8.4 ns VCC = 1.4 V to 1.6 V 1.6 3.8 5.4 1.4 5.8 ns A, B and C to Y; see Figure 14 [2][3] VCC = 1.65 V to 1.95 V 1.3 3.2 4.4 1.2 4.8 ns VCC = 2.3 V to 2.7 V 0.9 2.6 3.4 0.8 3.7 ns - - - 1.0 - ns transition time CI input capacitance VI = 0 V or VCC; VCC = 0 V to 2.75 V - 0.5 - - - pF CO output capacitance VO = 0 V; VCC = 0 V - 1.0 - - - pF 74AXP1G57 Product data sheet VCC = 2.7 V; see Figure 14 [4] tt All information provided in this document is subject to legal disclaimers. Rev. 3 — 16 September 2015 © Nexperia B.V. 2017. All rights reserved 7 of 18 74AXP1G57 Nexperia Low-power configurable multiple function gate Table 9. Dynamic characteristics …continued Voltages are referenced to GND (ground = 0 V); for test circuit, see Figure 20. Symbol Parameter Tamb = 25 C Conditions Min CPD Typ[1] Tamb = 40 C to +85 C Max Max [5] power dissipation fi = 1 MHz; VI = 0 V to VCC capacitance VCC = 0.75 V to 0.85 V - 2.6 - - - pF VCC = 1.1 V to 1.3 V - 2.7 - - - pF VCC = 1.4 V to 1.6 V - 2.8 - - - pF VCC = 1.65 V to 1.95 V - 2.9 - - - pF VCC = 2.3 V to 2.7 V - 3.3 - - - pF [1] All typical values are measured at nominal VCC. [2] tpd is the same as tPLH and tPHL. [3] For additional propagation delay values at different load capacitances see Figure 15 to Figure 19. [4] tt is the same as tTHL and tTLH. [5] Min Unit CPD is used to determine the dynamic power dissipation (PD in W). PD = CPD  VCC2  fi  N + CL  VCC2  fo where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in V; N = number of inputs switching. 11.1 Waveforms and graphs 9, $%&LQSXW 90 90 9 W3+/ 92+ W3/+ 
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