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74LVC1G58GM,115

74LVC1G58GM,115

  • 厂商:

    NEXPERIA(安世)

  • 封装:

    XSON6_1.45x1MM

  • 描述:

    可配置多功能门 6-XSON

  • 详情介绍
  • 数据手册
  • 价格&库存
74LVC1G58GM,115 数据手册
74LVC1G58 Low-power configurable multiple function gate Rev. 9 — 7 December 2016 Product data sheet 1. General description The 74LVC1G58 provides configurable multiple functions. The output state is determined by eight patterns of 3-bit input. The user can choose the logic functions AND, OR, NAND, NOR, XOR, inverter and buffer. All inputs can be connected to VCC or GND. Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of this device in a mixed 3.3 V and 5 V environment. This device is fully specified for partial power-down applications using IOFF. The IOFF circuitry disables the output, preventing the damaging backflow current through the device when it is powered down. All inputs (A, B and C) are Schmitt trigger inputs. They are capable of transforming slowly changing input signals into sharply defined, jitter-free output signals. 2. Features and benefits             Wide supply voltage range from 1.65 V to 5.5 V 5 V tolerant input/output for interfacing with 5 V logic High noise immunity Complies with JEDEC standard:  JESD8-7 (1.65 V to 1.95 V)  JESD8-5 (2.3 V to 2.7 V)  JESD8B/JESD36 (2.7 V to 3.6 V). ESD protection:  HBM JESD22-A114F exceeds 2000 V  MM JESD22-A115-A exceeds 200 V. 24 mA output drive (VCC = 3.0 V) CMOS low power consumption Latch-up performance exceeds 250 mA Direct interface with TTL levels Inputs accept voltages up to 5 V Multiple package options Specified from 40 C to +85 C and 40 C to +125 C. 74LVC1G58 Nexperia Low-power configurable multiple function gate 3. Ordering information Table 1. Ordering information Type number Package Temperature range Name Description Version 74LVC1G58GW 40 C to +125 C SC-88 plastic surface-mounted package; 6 leads SOT363 74LVC1G58GV 40 C to +125 C TSOP6 plastic surface-mounted package (TSOP6); 6 leads SOT457 74LVC1G58GM 40 C to +125 C XSON6 plastic extremely thin small outline package; no leads; 6 terminals; body 1  1.45  0.5 mm SOT886 74LVC1G58GF 40 C to +125 C XSON6 plastic extremely thin small outline package; no leads; 6 terminals; body 1  1  0.5 mm SOT891 74LVC1G58GN 40 C to +125 C XSON6 extremely thin small outline package; no leads; 6 terminals; body 0.9  1.0  0.35 mm SOT1115 74LVC1G58GS 40 C to +125 C XSON6 extremely thin small outline package; no leads; 6 terminals; body 1.0  1.0  0.35 mm SOT1202 4. Marking Table 2. Marking Type number Marking code[1] 74LVC1G58GW YK 74LVC1G58GV V58 74LVC1G58GM YK 74LVC1G58GF YK 74LVC1G58GN YK 74LVC1G58GS YK [1] The pin 1 indicator is located on the lower left corner of the device, below the marking code. 5. Functional diagram $   % & Fig 1.  <  DDE Logic symbol 74LVC1G58 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 9 — 7 December 2016 © Nexperia B.V. 2017. All rights reserved 2 of 21 74LVC1G58 Nexperia Low-power configurable multiple function gate 6. Pinning information 6.1 Pinning /9&* /9&* %   & *1'   9&& %   & *1'   9&& $ $   < %   & *1'   9&& $   < < DDE DDI 7UDQVSDUHQWWRSYLHZ DDE Fig 2.   /9&* Pin configuration SOT363 and SOT457 Fig 3. Pin configuration SOT886 7UDQVSDUHQWWRSYLHZ Fig 4. Pin configuration SOT891, SOT1115 and SOT1202 6.2 Pin description Table 3. Pin description Symbol Pin Description B 1 data input GND 2 ground (0 V) A 3 data input Y 4 data output VCC 5 supply voltage C 6 data input 7. Functional description Table 4. Function table[1] Inputs Output C B A Y L L L L L L H H L H L L L H H H H L L H H L H H H H L L H H H L [1] H = HIGH voltage level; L = LOW voltage level 74LVC1G58 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 9 — 7 December 2016 © Nexperia B.V. 2017. All rights reserved 3 of 21 74LVC1G58 Nexperia Low-power configurable multiple function gate 7.1 Logic configurations Table 5. Function selection table Logic function Figure 2-input NAND see Figure 5 2-input NAND with both inputs inverted see Figure 8 2-input AND with inverted input see Figure 6 and 7 2-input NOR with inverted input see Figure 6 and 7 2-input OR see Figure 8 2-input OR with both inputs inverted see Figure 5 2-input XOR see Figure 9 Buffer see Figure 10 Inverter see Figure 11 9&& % & % & < % <       9&& % & & < % & < % <       2-input NAND gate or 2-input OR with both inputs inverted < DDE DDE Fig 5. & Fig 6. 2-input AND gate with inverted B input or 2-input NOR gate with inverted C input 9&& 9&& $ & $ & < $ <       $ & & $ & < < < $       2-input AND gate with inverted C input or 2-input NOR gate with inverted A input < DDE DDE Fig 7. & Fig 8. 2-input OR gate or 2-input NAND gate with both inputs inverted 9&& 9&& % % & <       & $ < < $       DDE Fig 9. 2-input XOR gate 74LVC1G58 Product data sheet < DDE Fig 10. Buffer All information provided in this document is subject to legal disclaimers. Rev. 9 — 7 December 2016 © Nexperia B.V. 2017. All rights reserved 4 of 21 74LVC1G58 Nexperia Low-power configurable multiple function gate 9&& % % <       < DDE Fig 11. Inverter 8. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V). Symbol Parameter VCC supply voltage IIK input clamping current VI input voltage IOK output clamping current output voltage VO Conditions VI < 0 V [1] Min Max Unit 0.5 +6.5 50 - 0.5 +6.5 V V mA - 50 mA Active mode [1][2] 0.5 +6.5 V Power-down mode [1][2] 0.5 +6.5 V - 50 mA 100 mA VO > VCC or VO < 0 V IO output current ICC supply current - IGND ground current 100 - mA Tstg storage temperature 65 +150 C Ptot total power dissipation - 250 mW [1] VO = 0 V to VCC Tamb = 40 C to +125 C [3] The input and output voltage ratings may be exceeded if the input and output current ratings are observed. [2] When VCC = 0 V (Power-down mode), the output voltage can be 5.5 V in normal operation. [3] For SC-88 and SC-74 packages: above 87.5 C the value of Ptot derates linearly with 4.0 mW/K. For XSON6 packages: above 118 C the value of Ptot derates linearly with 7.8 mW/K. 9. Recommended operating conditions Table 7. Recommended operating conditions Symbol Parameter VCC supply voltage VI input voltage VO output voltage Tamb Conditions Product data sheet Typ Max Unit 1.65 - 5.5 V 0 - 5.5 V Active mode 0 - VCC V Power-down mode; VCC = 0 V 0 - 5.5 V 40 - +125 C ambient temperature 74LVC1G58 Min All information provided in this document is subject to legal disclaimers. Rev. 9 — 7 December 2016 © Nexperia B.V. 2017. All rights reserved 5 of 21 74LVC1G58 Nexperia Low-power configurable multiple function gate 10. Static characteristics Table 8. Static characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter Min Typ[1] Max Unit IO = 100 A; VCC = 1.65 V to 5.5 V - - 0.1 V IO = 4 mA; VCC = 1.65 V - - 0.45 V IO = 8 mA; VCC = 2.3 V - - 0.3 V Conditions Tamb = 40 C to +85 C VOL VOH LOW-level output voltage VI = VT+ or VT IO = 12 mA; VCC = 2.7 V - - 0.4 V IO = 24 mA; VCC = 3.0 V - - 0.55 V IO = 32 mA; VCC = 4.5 V - - 0.55 V HIGH-level output voltage VI = VT+ or VT IO = 100 A; VCC = 1.65 V to 5.5 V VCC  0.1 - - V IO = 4 mA; VCC = 1.65 V 1.2 - - V IO = 8 mA; VCC = 2.3 V 1.9 - - V IO = 12 mA; VCC = 2.7 V 2.2 - - V IO = 24 mA; VCC = 3.0 V 2.3 - - V IO = 32 mA; VCC = 4.5 V 3.8 - - V - 0.1 1 A II input leakage current VI = 5.5 V or GND; VCC = 0 V to 5.5 V IOFF power-off leakage current VI or VO = 5.5 V; VCC = 0 V - 0.1 2 A ICC supply current VI = 5.5 V or GND; VCC = 1.65 V to 5.5 V; IO = 0 A - 0.1 4 A ICC additional supply current VI = VCC  0.6 V; IO = 0 A; VCC = 2.3 V to 5.5 V - 5 500 A CI input capacitance - 2.5 - pF IO = 100 A; VCC = 1.65 V to 5.5 V - - 0.1 V IO = 4 mA; VCC = 1.65 V - - 0.7 V IO = 8 mA; VCC = 2.3 V - - 0.45 V IO = 12 mA; VCC = 2.7 V - - 0.6 V IO = 24 mA; VCC = 3.0 V - - 0.8 V IO = 32 mA; VCC = 4.5 V - - 0.8 V VCC  0.1 - - V IO = 4 mA; VCC = 1.65 V 0.95 - - V IO = 8 mA; VCC = 2.3 V 1.7 - - V IO = 12 mA; VCC = 2.7 V 1.9 - - V IO = 24 mA; VCC = 3.0 V 2.0 - - V IO = 32 mA; VCC = 4.5 V 3.4 - - V - - 1 A Tamb = 40 C to +125 C VOL VOH LOW-level output voltage VI = VT+ or VT HIGH-level output voltage VI = VT+ or VT IO = 100 A; VCC = 1.65 V to 5.5 V II input leakage current 74LVC1G58 Product data sheet VI = 5.5 V or GND; VCC = 0 V to 5.5 V All information provided in this document is subject to legal disclaimers. Rev. 9 — 7 December 2016 © Nexperia B.V. 2017. All rights reserved 6 of 21 74LVC1G58 Nexperia Low-power configurable multiple function gate Table 8. Static characteristics …continued At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Min Typ[1] Max power-off leakage current VI or VO = 5.5 V; VCC = 0 V - - 2 A ICC supply current VI = 5.5 V or GND; VCC = 1.65 V to 5.5 V; IO = 0 A - - 4 A ICC additional supply current VI = VCC  0.6 V; IO = 0 A; VCC = 2.3 V to 5.5 V - - 500 A Symbol Parameter IOFF [1] Conditions Unit Typical values are measured at maximum VCC and Tamb = 25 C. 11. Dynamic characteristics Table 9. Dynamic characteristics Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 13. Symbol Parameter propagation delay tpd 40 C to +85 C Conditions Min Max Min Max VCC = 1.65 V to 1.95 V 1.0 6.0 14.4 1.0 18.0 ns VCC = 2.3 V to 2.7 V 0.5 3.5 8.3 0.5 10.4 ns VCC = 2.7 V 0.5 4.2 8.5 0.5 10.6 ns VCC = 3.0 V to 3.6 V 0.5 3.8 6.3 0.5 7.9 ns 0.5 3.0 5.1 0.5 6.4 ns - 20 - - - pF A, B, C to Y; see Figure 12 [2] VCC = 4.5 V to 5.5 V power dissipation capacitance CPD VCC = 3.3 V; VI = GND to VCC [1] Typical values are measured at nominal VCC and at Tamb = 25 C. [2] tpd is the same as tPLH and tPHL [3] 40 C to +125 C Unit Typ[1] [3] CPD is used to determine the dynamic power dissipation (PD in W). PD = CPD  VCC2  fi  N + (CL  VCC2  fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in V; N = number of inputs switching; (CL  VCC2  fo) = sum of outputs. 74LVC1G58 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 9 — 7 December 2016 © Nexperia B.V. 2017. All rights reserved 7 of 21 74LVC1G58 Nexperia Low-power configurable multiple function gate 12. Waveforms 9, $%&LQSXW 90 90 *1' W 3+/ W 3/+ 92+ 90
74LVC1G58GM,115
物料型号:74LVC1G58

器件简介: 74LVC1G58是一种低功耗、可配置的多功能门电路。它可以根据3位输入的八种模式来确定输出状态。用户可以选择逻辑功能,包括与门(AND)、或门(OR)、与非门(NAND)、或非门(NOR)、异或门(XOR)、反相器(inverter)和缓冲器(buffer)。所有输入可以连接到VCC或GND。该设备能够在3.3V或5V设备中驱动输入,允许在3.3V和5V混合环境中使用。此外,该设备还具备部分断电应用的全面规范,使用IOFF电路在断电时禁用输出,防止通过设备产生有害的反向电流。所有输入(A, B和C)都是施密特触发器输入,能够将缓慢变化的输入信号转换为清晰、无抖动的输出信号。

引脚分配: - B(1号引脚):数据输入 - GND(2号引脚):地(0V) - A(3号引脚):数据输入 - Y(4号引脚):数据输出 - Vcc(5号引脚):供电电压 - (6号引脚):数据输入

参数特性: - 宽供电电压范围:1.65V至5.5V - 5V容限输入/输出,用于与5V逻辑接口 - 高抗噪声能力 - 符合JEDEC标准 - ESD保护:人体模型(HBM)超过2000V,机器模型(MM)超过200V - 输出驱动能力:±24mA(VCC = 3.0V) - CMOS低功耗 - 锁定性能超过250mA - 直接与TTL电平接口 - 输入接受高达5V的电压 - 多种封装选项 - 规格从-40°C至+85°C和-40°C至+125°C

功能详解: 74LVC1G58提供了多种逻辑配置,包括2输入与非门、2输入或非门、2输入与门、2输入或门、2输入异或门、缓冲器和反相器等。

应用信息: 该设备适用于需要低功耗和可配置逻辑功能的场合,如自动化控制系统、通信设备、数据转换器等。

封装信息: 74LVC1G58提供了多种封装选项,例如SC-88、TSOP6、XSON6等,以适应不同的应用需求和空间限制。
74LVC1G58GM,115 价格&库存

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