74HC03; 74HCT03
Quad 2-input NAND gate; open-drain output
Rev. 4 — 27 November 2015
Product data sheet
1. General description
The 74HC03; 74HCT03 is a quad 2-input NAND gate with open-drain outputs. Inputs
include clamp diodes that enable the use of current limiting resistors to interface inputs to
voltages in excess of VCC.
2. Features and benefits
Input levels:
For 74HC03: CMOS level
For 74HCT03: TTL level
Complies with JEDEC standard no. 7A
ESD protection:
HBM JESD22-A114F exceeds 2000 V
MM JESD22-A115-A exceeds 200 V
Multiple package options
Specified from 40 C to +85 C and from 40 C to +125 C
3. Ordering information
Table 1.
Ordering information
Type number
74HC03D
Package
Temperature range
Name
Description
Version
40 C to +125 C
SO14
plastic small outline package; 14 leads; body width
3.9 mm
SOT108-1
40 C to +125 C
SSOP14
plastic shrink small outline package; 14 leads; body
width 5.3 mm
SOT337-1
40 C to +125 C
TSSOP14
plastic thin shrink small outline package; 14 leads;
body width 4.4 mm
SOT402-1
74HCT03D
74HC03DB
74HCT03DB
74HC03PW
74HCT03PW
74HC03; 74HCT03
Nexperia
Quad 2-input NAND gate; open-drain output
4. Functional diagram
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PQD
Fig 1.
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*1'
DDD
Logic symbol
Fig 2.
DDE
IEC logic symbol
Fig 3.
Logic diagram (one gate)
5. Pinning information
5.1 Pinning
+&
+&7
+&
+&7
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9&&
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9&&
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*1'
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DDD
Fig 4.
DDD
Pin configuration SO14
Fig 5.
Pin configuration (T)SSOP14
5.2 Pin description
Table 2.
Pin description
Symbol
Pin
Description
1A to 4A
1, 4, 9, 12
data input
1B to 4B
2, 5, 10, 13
data input
1Y to 4Y
3, 6, 8, 11
data output
GND
7
ground (0 V)
VCC
14
supply voltage
74HC_HCT03
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 27 November 2015
©
Nexperia B.V. 2017. All rights reserved
2 of 14
74HC03; 74HCT03
Nexperia
Quad 2-input NAND gate; open-drain output
6. Functional description
Table 3.
Function table[1]
Input
Output
nA
nB
nY
L
L
Z
L
H
Z
H
L
Z
H
H
L
[1]
H = HIGH voltage level; L = LOW voltage level; Z = high-impedance OFF-state.
7. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol
Parameter
VCC
supply voltage
VO
output voltage
Conditions
Min
Max
Unit
0.5
+7
V
[1]
0.5
+7
V
-
20
mA
-
20
mA
input clamping current
VI < 0.5 V or VI > VCC + 0.5 V
[1]
IOK
output clamping current
VO < 0.5 V
[1]
IO
output current
0.5 V < VO
-
25
mA
ICC
supply current
-
50
mA
IGND
ground current
50
-
mA
Tstg
storage temperature
65
+150
C
-
500
mW
IIK
[2]
total power dissipation
Ptot
SO14 and (T)SSOP14
packages
[1]
The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
[2]
For SO14 package: Ptot derates linearly with 8 mW/K above 70 C.
For (T)SSOP14 packages: Ptot derates linearly with 5.5 mW/K above 60 C.
8. Recommended operating conditions
Table 5.
Recommended operating conditions
Voltages are referenced to GND (ground = 0 V)
Symbol Parameter
VCC
supply voltage
Conditions
74HC03
74HCT03
Unit
Min
Typ
Max
Min
Typ
Max
2.0
5.0
6.0
4.5
5.0
5.5
V
VI
input voltage
0
-
VCC
0
-
VCC
V
VO
output voltage
0
-
VCC
0
-
VCC
V
Tamb
ambient temperature
40
+25
+125
40
+25
+125
C
t/V
input transition rise and fall rate
-
-
625
-
-
-
VCC = 4.5 V
-
1.67
139
-
1.67
139
ns/V
VCC = 6.0 V
-
-
83
-
-
-
ns/V
74HC_HCT03
Product data sheet
VCC = 2.0 V
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 27 November 2015
©
ns/V
Nexperia B.V. 2017. All rights reserved
3 of 14
74HC03; 74HCT03
Nexperia
Quad 2-input NAND gate; open-drain output
9. Static characteristics
Table 6.
Static characteristics
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
25 C
Conditions
40 C to +85 C 40 C to +125 C Unit
Min
Typ
Max
Min
Max
Min
Max
VCC = 2.0 V
1.5
1.2
-
1.5
-
1.5
-
V
VCC = 4.5 V
3.15
2.4
-
3.15
-
3.15
-
V
VCC = 6.0 V
4.2
3.2
-
4.2
-
4.2
-
V
74HC03
VIH
VIL
VOL
HIGH-level
input voltage
LOW-level
input voltage
LOW-level
output voltage
VCC = 2.0 V
-
0.8
0.5
-
0.5
-
0.5
V
VCC = 4.5 V
-
2.1
1.35
-
1.35
-
1.35
V
VCC = 6.0 V
-
2.8
1.8
-
1.8
-
1.8
V
IO = 20 A; VCC = 2.0 V
-
0
0.1
-
0.1
-
0.1
V
IO = 20 A; VCC = 4.5 V
-
0
0.1
-
0.1
-
0.1
V
IO = 20 A; VCC = 6.0 V
-
0
0.1
-
0.1
-
0.1
V
IO = 4.0 mA; VCC = 4.5 V
-
0.15
0.26
-
0.33
-
0.4
V
IO = 5.2 mA; VCC = 6.0 V
VI = VIH or VIL
-
0.16
0.26
-
0.33
-
0.4
V
II
input leakage
current
VI = VCC or GND;
VCC = 6.0 V
-
0.1
-
-
1
-
1
A
IOZ
OFF-state
output current
per input pin; VI = VIL;
VO = VCC or GND;
other inputs at VCC or GND;
VCC = 6.0 V; IO = 0 A
-
-
±0.5
-
±5.0
-
±10
A
ICC
supply current
VI = VCC or GND; IO = 0 A;
VCC = 6.0 V
-
2.0
-
-
20
-
40
A
CI
input
capacitance
-
3.5
-
-
-
-
-
pF
74HCT03
VIH
HIGH-level
input voltage
VCC = 4.5 V to 5.5 V
2.0
1.6
-
2.0
-
2.0
-
V
VIL
LOW-level
input voltage
VCC = 4.5 V to 5.5 V
-
1.2
0.8
-
0.8
-
0.8
V
VOL
LOW-level
output voltage
VI = VIH or VIL; VCC = 4.5 V
IO = 20 A
-
0
0.1
-
0.1
-
0.1
V
IO = 4.0 mA
-
0.15
0.26
-
0.33
-
0.4
V
II
input leakage
current
VI = VCC or GND;
VCC = 5.5 V
-
-
0.1
-
1
-
1
A
IOZ
OFF-state
output current
per input pin; VI = VIL;
VO = VCC or GND;
other inputs at VCC or GND;
VCC = 5.5 V; IO = 0 A
-
-
±0.5
-
±5.0
-
±10
A
74HC_HCT03
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 27 November 2015
©
Nexperia B.V. 2017. All rights reserved
4 of 14
74HC03; 74HCT03
Nexperia
Quad 2-input NAND gate; open-drain output
Table 6.
Static characteristics …continued
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
25 C
Conditions
40 C to +85 C 40 C to +125 C Unit
Min
Typ
Max
Min
Max
Min
Max
ICC
supply current
VI = VCC or GND; IO = 0 A;
VCC = 5.5 V
-
-
2.0
-
20
-
40
A
ICC
additional
supply current
per input pin;
VI = VCC 2.1 V; IO = 0 A;
other inputs at VCC or GND;
VCC = 4.5 V to 5.5 V
-
100
360
-
450
-
490
A
CI
input
capacitance
-
3.5
-
-
-
-
-
pF
10. Dynamic characteristics
Table 7.
Dynamic characteristics
GND = 0 V; CL = 50 pF; for test circuit, see Figure 7.
Symbol Parameter
25 C
Conditions
40 C to +125 C Unit
Min
Typ
Max
Max
(85 C)
Max
(125 C)
74HC03
tpd
propagation delay nA, nB to nY; see Figure 6
[1]
VCC = 2.0 V
-
28
95
120
145
ns
VCC = 4.5 V
-
10
19
24
29
ns
VCC = 5.0 V; CL = 15 pF
-
8
-
-
-
ns
-
8
16
20
25
ns
VCC = 2.0 V
-
19
75
95
110
ns
VCC = 4.5 V
-
7
15
19
22
ns
-
6
13
16
19
ns
-
4
-
-
-
pF
VCC = 6.0 V
tt
transition time
[2]
see Figure 6
VCC = 6.0 V
CPD
power dissipation
capacitance
74HC_HCT03
Product data sheet
per package; VI = GND to VCC
[3]
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 27 November 2015
©
Nexperia B.V. 2017. All rights reserved
5 of 14
74HC03; 74HCT03
Nexperia
Quad 2-input NAND gate; open-drain output
Table 7.
Dynamic characteristics …continued
GND = 0 V; CL = 50 pF; for test circuit, see Figure 7.
Symbol Parameter
25 C
Conditions
40 C to +125 C Unit
Min
Typ
Max
Max
(85 C)
Max
(125 C)
-
12
24
30
36
ns
-
10
-
-
-
ns
74HCT03
[1]
propagation delay nA, nB to nY; see Figure 6
tpd
VCC = 4.5 V
VCC = 5.0 V; CL = 15 pF
tt
transition time
VCC = 4.5 V; see Figure 6
[2]
CPD
power dissipation
capacitance
per package;
VI = GND to VCC 1.5 V
[3]
[1]
-
7
15
19
22
ns
-
4
-
-
-
pF
tpd is the same as tPLZ and tPZL.
[2]
tt is the same as tTHL.
[3]
CPD is used to determine the dynamic power dissipation (PD in W):
PD = CPD VCC2 fi N + (CL VCC2 fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in V;
N = number of inputs switching;
(CL VCC2 fo) = sum of outputs.
11. Waveforms
9,
90
Q$Q%LQSXW
*1'
W3/=
W3=/
9&&
Q
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