MMFTN3019E

MMFTN3019E

  • 厂商:

    ST(先科)

  • 封装:

    SOT-523-3

  • 描述:

    MOS管 N-Channel VDS=30V VGS=±20V ID=100mA P=150mW SOT523

  • 数据手册
  • 价格&库存
MMFTN3019E 数据手册
MMFTN3019E N-Channel Field Effect Transistor Applications • Interfacing, switching Features • Low on-resistance • Fast switching speed • Low voltage drive makes this device ideal for portable equipment • Drive circuits can be simple • Parallel use is easy Absolute Maximum Ratings (Ta = 25 OC) Parameter Drain-Source Voltage Gate-Source Voltage M E Drain Current - Continuous Drain Current - Pulsed Total Power Dissipation Channel temperature S Storage Temperature Range 1) 2) PW ≤ 10 µs, Duty cycle ≤ 1 % With each pin mounted on the recommended lands Drain Gate Source E T Symbol VDSS VGSS ID IDP H C Value Unit 30 V ± 20 V ± 100 1) ± 400 2) mA Ptot 150 mW Tch 150 O Tstg - 55 to + 150 O C C SEMTECH ELECTRONICS LTD. Subsidiary of Sino-Tech International (BVI) Limited ® Dated: 09/12/2011 Rev:02 MMFTN3019E Characteristics at Ta = 25 OC Parameter Symbol Min. Typ. Max. Unit Drain-Source Breakdown Voltage at ID = 10 µA V(BR)DSS 30 - - V Zero Gate Voltage Drain Current at VDS = 30 V IDSS - - 1 µA Gate-source Leakage at VGS = ± 20 V IGSS - - ±1 µA Gate-Source Threshold Voltage at VDS = 3 V, ID = 100 µA VGS(th) 0.8 - 1.5 V Static Drain-Source On-Resistance at VGS = 4 V, ID = 10 mA at VGS = 2.5 V, ID = 1 mA RDS(on) - - 8 13 Ω |yfs| 20 - - ms 13 - pF 9 - pF 4 - pF 15 - ns Forward transfer admittance at VDS = 3 V, ID = 10 mA Input Capacitance at VDS = 5 V, f = 1 MHz E T H C Ciss - Coss - Crss - Turn-On delayTime at VDD = 5 V, ID = 10 mA, VGS = 5 V, RL = 500 Ω, RG = 10 Ω td(on) - Turn-Off Delay Time at VDD = 5 V, ID = 10 mA, VGS = 5 V, RL = 500 Ω, RG = 10 Ω td(off) - 80 - ns Rise Time at VDD = 5 V, ID = 10 mA, VGS = 5 V, RL = 500 Ω, RG = 10 Ω tr - 35 - ns Turn-off delay time at VDD = 5 V, ID = 10 mA, VGS = 5 V, RL = 500 Ω, RG = 10 Ω tf - 80 - ns Output Capacitance at VDS = 5 V, f = 1 MHz Reverse Transfer Capacitance at VDS = 5 V, f = 1 MHz M E S SEMTECH ELECTRONICS LTD. Subsidiary of Sino-Tech International (BVI) Limited ® Dated: 09/12/2011 Rev:02 MMFTN3019E M E S E T H C SEMTECH ELECTRONICS LTD. Subsidiary of Sino-Tech International (BVI) Limited ® Dated: 09/12/2011 Rev:02
MMFTN3019E 价格&库存

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MMFTN3019E
    •  国内价格
    • 1+0.08910
    • 4000+0.07080

    库存:101111

    MMFTN3019E
      •  国内价格
      • 20+0.16600
      • 200+0.12842
      • 600+0.10746
      • 4000+0.09483
      • 8000+0.08392
      • 20000+0.07809

      库存:66511

      MMFTN3019E
      •  国内价格
      • 1+0.10500
      • 100+0.09800
      • 300+0.09100
      • 500+0.08400
      • 2000+0.08050
      • 5000+0.07840

      库存:0