VBA1328

VBA1328 www.VBsemi.com N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 30 0.032 at VGS = 10 V 6.8 0.045 at VGS = 4.5 V 5.8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC Qg (Typ.) 9.2 nC APPLICATIONS • Notebook Load Switch • Low Current dc-to-dc D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Symbol VDS VGS Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Maximum Power Dissipation ID TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C IS 1.7b,c 4.1 2.6 PD 2b,c 1.25b,c - 55 to 150 TJ, Tstg Operating Junction and Storage Temperature Range Unit V 6.5b,c 4.9b,c 30 2.7 IDM Pulsed Drain Current Continuous Source-Drain Diode Current Limit 30 ± 20 6.8 a 5a A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot t≤5s Steady State Symbol RthJA RthJF Typical 45 25 Maximum 62.5 30 Unit °C/W Notes: a. Package Limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under Steady State conditions is 110 °C/W. 1 VBA1328 www.VBsemi.com SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 30 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage ID = 250 µA VGS(th) VDS = VGS, ID = 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time mV/°C - 6.2 1 3 V ± 100 nA VDS = 30 V, VGS = 0 V 1 VDS = 30 V, VGS = 0 V, TJ = 55 °C 10 VDS ≥ 5 V, VGS = 10 V VGS = 10 V, ID = 5 A 0.032 VGS = 4.5 V, ID = 4 A 0.029 0.045 VDS = 10 V, ID = 5 A 24 1295 VDS = 15 V, VGS = 0 V, f = 1 MHz 170 pF 72 VDS = 15 V, VGS = 10 V, ID = 5 A 21.8 33 9.2 14 VDS = 15 V, VGS = 4.5 V, ID = 5 A 3.8 f = 1 MHz 2.4 21 VDD = 15 V, RL = 3 Ω ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω Ω 40 25 40 tf 9 18 td(on) 10 20 tr nC 2.5 14 td(off) Ω S 20 td(off) µA A 20 0.016 td(on) tr V 33 VDD = 15 V, RL = 3 Ω ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω tf 8 16 21 35 8 16 ns Drain-Source Body Diode Characteristics Continous Source-Drain Diode Current IS Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C 2.7 30 IS = 1.7 A, VGS = 0 V IF = 3 A, dI/dt = 100 A/µs, TJ = 25 °C A 0.77 1.2 V 21 40 ns 15 30 nC 13 8 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2 VBA1328 www.VBsemi.com TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 30 1.5 VGS = 10 V thru 4 V 1.2 I D - Drain Current (A) I D - Drain Current (A) 24 18 12 6 0.9 0.6 TC = 25 °C 0.3 TC = 125 °C VGS = 3 V TC = - 55 °C 0 0.0 0.0 0.5 1.0 1.5 2.0 2.5 0 1 VDS - Drain-to-Source Voltage (V) 2 3 4 5 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.030 1600 1280 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) Ciss 0.026 VGS = 4.5 V 0.022 0.018 0.014 960 640 320 VGS = 10 V 0.010 Coss Crss 0 0 6 12 18 24 30 0 18 12 24 I D - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 10 30 1.7 ID = 5 A ID = 5 A 8 1.5 VDS = 10 V VDS = 15 V 6 VDS = 20 V 4 2 VGS = 10 V (Normalized) R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 6 1.3 VGS = 4.5 V 1.1 0.9 0 0 5 10 15 20 25 0.7 - 50 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 150 3 VBA1328 www.VBsemi.com 100 0.10 10 0.08 1 R DS(on) - On-Resistance (Ω) I S - Source Current (A) TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted TJ = 150 °C 0.1 TJ = 25 °C 0.06 0.04 TA = 125 °C 0.02 0.01 TA = 25 °C 0.001 0.0 0 0.2 0.4 0.6 0.8 1.0 0 1.2 1 2 VSD - Source-to-Drain Voltage (V) 3 4 5 6 7 8 9 10 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Temperature 0.6 60 ID = 250 µA 0 48 ID = 5 mA Power (W) VGS(th) Variance (V) 0.3 - 0.3 - 0.6 - 0.9 - 50 36 24 12 - 25 0 25 50 75 100 125 0 0.001 150 0.01 TJ - Temperature (°C) Threshold Voltage Limited by RDS(on)* I D - Drain Current (A) 10 1 ms 1 10 ms 100 ms 0.1 1 s, 10 s DC TA = 25 °C Single Pulse 0.001 0.1 1 * VGS 10 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient 4 1 Single Pulse Power, Junction-to-Ambient 100 0.01 0.1 Time (s) 10 VBA1328 www.VBsemi.com TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 12 I D - Drain Current (A) 10 Package Limited 7 5 2 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) 5 1.5 4 1.2 3 0.9 Power (W) Power (W) Current Derating* 2 1 0.6 0.3 0 0.0 0 25 50 75 100 125 150 0 25 50 75 100 125 TC - Case Temperature (°C) TA - Ambient Temperature (°C) Power Derating, Junction-to-Foot Power Derating, Junction-to-Ambient 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. 5 VBA1328 www.VBsemi.com TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.1 0.2 Notes: 0.1 PDM 0.05 0.01 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 110 °C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.001 10-4 10-3 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot 6 1 10 VBA1328 www.VBsemi.com SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 7 VBA1328 www.VBsemi.com RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index 8 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) VBA1328 www.VBsemi.com Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.com) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. 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