TPC817S1D RAG

TPC817 SERIES Taiwan Semiconductor 200mW, 4 PIN DIP Phototransistor Photocoupler FEATURES KEY PARAMETERS ● Current transfer ratio (CTR: MIN.80% at IF=5mA, VCE=5V) ● High isolation voltage between input and output (Viso=5000V rms) ● Creepage distance＞7.62mm ● UL Recognized File # E478892 ● Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 VALUE UNIT CTR 80-600 % VCEO 80 V Ptot 200 mW IC 50 mA Viso Package APPLICATIONS ● ● ● ● ● PARAMETER Configuration 5000 Vrms DIP-4 DIP-4M SOP-4 Single Dice Programmable controllers System appliances, measuring instruments Telecommunication equipments Home appliances,such as fan heaters,etc Signal transmission between circuits of different potentials and impedances MECHANICAL DATA ● Case: DIP-4 , DIP-4M , SOP-4 ● Molding compound: UL flammability classification rating 94V-0 ● Moisture sensitivity level: level 1, per J-STD-020 ● Packing code with suffix "G" means green compound (halogen-free) ● Terminal: Matte tin plated leads, solderable per J-STD-002 ● Meet JESD 201 class 1A whisker test ● Polarity: Indicated by cathode band 1 Version:C1612 TPC817 SERIES Taiwan Semiconductor ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER Input PART NUMBER 50 UNIT Forward current SYMBOL IF Reverse voltage VR 6 V Power dissipation mA P 70 mW Collector-emitter voltage VCEO 80 V Emitter-collector voltage VECO 6 V Collector current IC 50 mA Collector power dissipation PC 150 mW Total power dissipation Ptot 200 mW Isolation voltage Viso 5000 Vrms Rated impulse isolation voltage VIOTM 6000 V Rated repetitive peak isolation voltage Output VIORM 630 V Operating temperature Topr -40 to +100 °C Storage temperature Tstg -55 to +125 °C Soldering temperature Tsol 260 °C ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER Input CONDITIONS Forward voltage IF=20mA VF Reverse current VR=4V IR Terminal capacitance V=0, f=1kHz Ct Collector dark current Collector-emitter Output breakdown voltage Emitter-collector breakdown voltage Current transfer saturation voltage Isolation resistance Characteristics Floating capacitance Cut-off frequency TYP MAX UNIT 1.2 1.4 V 10 μA 250 pF 30 -7 ICEO IC=0.1mA, IF=0 BVCEO 80 V IE=10μA, IF=0 BVECO 6 V IC 2.5 30 mA CTR 80 600 % 0.2 V IF=5mA, VCE=5V ration(Note 1) Collector-emitter MIN VCE=20V,IF=0 Collector current Transfer SYMBOL IF=20mA, IC=1mA DC500V, 40 to 60%RH V=0, f=1MHz VCE=5V, IC=2mA, RL=100Ω, -3dB 10 0.1 VCE(sat) RISO 10 5x10 11 Ω 10 Cf 0.6 fc 80 A 1.0 pF KHz Response Rise time VCE=2V, IC=2mA, tr 4 18 μs time Fall time RL=100Ω tf 3 18 μs Notes: 1. Classification table of current transfer ratio is shown below 2 Version:C1612 TPC817 SERIES Taiwan Semiconductor RANK TABLE OF CURRENT TRANSFER RATIO, CTR RANK MARK MIN (%) MAX (%) A 80 160 B 130 260 C 200 400 D 300 600 ORDERING INFORMATION PART NO. (Note 1&2) PACKING PACKING CODE CODE SUFFIX TPC817x C9 TPC817Mx C9 TPC817S1x RA PACKAGE PACKING DIP-4 100 / TUBE DIP-4M G (Leads with 0.4" spacing) SOP-4 100 / TUBE 2K / 13" Reel Notes: 1. “x” defines CTR rank from “A” to “D” 2. Whole series with green compound EXAMPLE EXAMPLE P/N PART NO. PACKING CODE TPC817A C9G TPC817A C9 PACKING CODE SUFFIX G 3 DESCRIPTION Green compound Version:C1612 TPC817 SERIES Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig. 1 Forward Current vs. Fig.2 Collector Power Dissipation vs. Ambient Temperature Ambient Temperature 200 Collector Power Dissipation, Pc (mW) IF, Instantaneous Forward Current (mA) 60 50 40 30 20 10 150 100 50 0 0 -30 -15 0 15 30 45 60 75 -30 -15 90 105 120 135 0 30 45 60 75 90 105 120 135 Ambient Temperature, Ta (°C) Ambient Temperature, Ta (°C) Fig.3 Collector-Emitter Saturation Voltage vs Fig.4 Forward Current vs. Forward Current Forward Voltage 6 1000 5 75°C 4 Forward Current IF(mA) Collector-Emitter Saturation Voltage VCE(sat) 15 7mA 5mA 3 3mA 2 1mA 1 100 50°C 25°C 0°C 10 -25°C IC=0.5mA 1 0 0 5 10 0 15 0.5 1 1.5 2 2.5 3 Forward Voltage VF (V) Forward Current IF(mA) 4 Version:C1612 TPC817 SERIES Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig. 5 Current Transfer Ratio vs. Fig.6 Collector Current vs. Forward Current Collector-Emitter Voltage 200 30 IF=30mA 160 Collector Current Ic(mA) Current Transfer Ratio (%) 180 140 120 100 80 60 40 VCE=5V Pc(max) 20mA 20 10 10mA 20 5mA 0 0 1 10 Forward Current IF(mA) 0 100 2 3 4 5 6 7 8 9 Collector-Emitter Voltage VCE(V) Fig.7 Relative Current Transfer Ratio vs. Fig.8 Collector-emitter Saturation Voltage vs Ambient Temperature Ambient Temperature 0.16 150 0.14 IF=5mA VCE=5V Collector-Emitter Saturation Voltage VCE(sat) (A) Relative Current Transfer Ratio (%) 1 100 50 IF=20mA IC=1mA 0.12 0.1 0.08 0.06 0.04 0.02 0 0 -30 0 30 60 90 120 -30 0 30 60 90 120 Ambient Temperature Ta(°C) Ambient Temperature Ta(°C) 5 Version:C1612 TPC817 SERIES Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig. 9 Collector Dark Current vs. Fig.10 Response Time vs. Ambient Temperature Load Resistance 1000 VCE=20V 1.E-06 Response Time (μs) Collector Dark Current ICEO(A) 1.E-05 1.E-07 1.E-08 IC=2mA VCE=2V 100 tf tr 10 td 1 1.E-09 ts 0.1 1.E-10 -30 0 30 60 0.01 90 Ambient Temperature Ta(°C) 0.1 1 10 100 Load Resistance RL(kΩ) Voltage Gain Av(dB) Fig.11 Frequency Response 4 2 0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 -22 -24 IC=2mA VCE=5V 100Ω 1kΩ RL=10kΩ 0.1 1 10 100 1000 Frequency f(kHz) 6 Version:C1612 TPC817 SERIES Taiwan Semiconductor TEST CIRCUIT RESPONSE TIME TEST CIRCUIT FOR FREQUENCY RESPONSE 7 Version:C1612 TPC817 SERIES Taiwan Semiconductor PACKAGE OUTLINE DIMENSION DIP-4 DIM. Min Max A 6.40 6.60 B 4.50 4.70 C 7.90 8.30 D 3.28 3.68 E 2∘ 8∘ F 2.70 2.90 J 0.23 0.26 K 8.86 9.31 L N DIM. 0.50 typ. 2.44 2.64 0.40 typ. Unit(mm) Min Max A 6.40 6.60 B 4.50 4.70 C 7.90 8.30 D 3.28 3.68 F 1.25 typ. G 0.40 typ. J 0.23 0.26 K 9.86 10.46 L 8 1.25 typ. H M DIP-4M (Leads with 0.4" spacing) Unit(mm) 0.50 typ. M 2.44 2.64 N 2.40 2.90 Version:C1612 TPC817 SERIES Taiwan Semiconductor PACKAGE OUTLINE DIMENSION SOP-4 DIM. Unit(mm) Min Max A 6.40 6.60 B 4.50 4.70 C 7.90 8.30 D 3.28 3.68 F G 1.25 typ. 0.40 typ. H 0.00 0.20 J 0.90 1.20 K 9.80 10.30 L M 1.25 typ. 2.49 2.69 MARKING Notes： 817: Product type B: CTR rank mark YWW: Date code 9 Version:C1612 TPC817 SERIES Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 10 Version:C1612