1N4148W

1N4148W Silicon Epitaxial Planar Switching Diode Features PINNING • Fast switching PIN 1 2 DESCRIPTION Cathode Anode 2 1 T4 Top View Marking Code: " T4 " Simplified outline SOD-123 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit VRM 100 V VR 75 V IF(AV) 150 mA Non-repetitive Peak Forward Surge Current at t = 1 μs IFSM 2 A Power Dissipation Ptot 400 mW RθJA 312 Tj 150 O Tstg - 65 to + 150 O r Peak Reverse Voltage ou Reverse Voltage ol Average Rectified Forward Current Junction Temperature bl u Storage Temperature Range ec Thermal Resistance from Junction to Ambient Air C/W O C C Characteristics at Ta = 25 OC Parameter Reverse Breakdown Voltage Symbol Min. Max. Unit V(BR)R 75 - V - 0.715 0.855 1 1.25 - 1 25 50 30 µA nA µA µA Forward Voltage at IF = 1 mA at IF = 10 mA at IF = 50 mA at IF = 150 mA VF Peak Reverse Current at VR = 75 V at VR = 20 V at VR = 75 V, TJ = 150 OC at VR = 25 V, TJ = 150 OC IR Total Capacitance at VR = 0 V, f = 1 MHz CT - 2 pF Reverse Recovery Time at Irr = 0.1 X IR, IF = IR = 10 mA, RL = 100 Ω trr - 4 ns Page 1 of 3 V REV02: 09/2011 Typical Characteristics 400 300 200 0 0 150 0.01 0.001 1.0 0.5 0 1.5 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics 2.0 ol 10,000 ec 1,000 100 10 1 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.1 0 Page 2 of 3 CT, TOTAL CAPACITANCE (pF) 1.8 bl u IR, INSTANTANEOUS REVERSE CURRENT (nA) 25 50 75 100 125 TA, AMBIENT TEMPERATURE (°C) Fig. 1 Power Derating Curve 0.1 ou 100 1 r IF, INSTANTANEOUS FORWARD CURRENT (A) PD, POWER DISSIPATION (mW) 500 60 80 100 20 40 VR, INSTANTANEOUS REVERSE VOLTAGE (V) Fig. 3 Typical Reverse Characteristics 0 10 30 40 20 VR, DC REVERSE VOLTAGE (V) Fig. 4 Total Capacitance vs. Reverse Voltage REV02: 09/2011 PACKAGE OUTLINE Plastic surface mounted package; 2 leads bl u ec ol ou r SOD-123 Page 3 of 3 REV02: 09/2011