A733

$ TRANSISTOR (313) FEATURE Excellent hFE Linearity SOT-23 Low noise Complementary to & MARKING: 1ˊBASE 2ˊEMITTER 3ˊCOLLECTOR &6 MAXIMUM RATINGS (Ta=25Я unless otherwise noted) Parameter Value Unit V Collector-Base Voltage -60 VCEO Collector-Emitter Voltage -50 VEBO Emitter-Base Voltage V ou VCBO r Symbol V -150 mA 200 mW Thermal Resistance From Junction To Ambient 625 Я/W Tj Junction Temperature 150 Я Tstg Storage Temperature -55̚+150 Я Collector Current PC Collector Power Dissipation bl u RĬJA ec IC ol -5 ELECTRICAL CHARACTERISTICS (Ta=25Я unless otherwise specified) Parameter Symbol Test conditions Min Typ Max ax UnLW Collector-base breakdown voltage V(BR)CBO IC= -5uA,IE=0 -60 V Collector-emitter breakdown voltage V(BR)CEO IC= -1mA , IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE= -50uA, IC=0 -5 V Collector cut-off current ICBO VCB= -60 V , IE=0 -0.1 uA Emitter cut-off current IEBO VEB= -5 V , IC=0 -0.1 uA DC current gain hFE VCE= -6 V, IC= -1mA Collector-emitter saturation voltage VCE(sat) Base-emitter voltage VBE(on) Transition frequency fT 9CE=-6V,IC=-P$ Collector output capacitance Cob VCB=-10V,IE=0,f=1MHZ Noise figure NF VCE=-6V,IC=-0.3mA, Rg=10kŸ,f=100HZ 3DJHI 0 IC= -100mA, IB=- 10mA VCE=-6V,IC=-1.0mA -0.58 4 -0.18 -0.3 V -0.62 -0.68 V  MHz 4.5 7 pF 6 20 dB 5(9 7\SLFDO&KDUDFWHULVWLFV Static Characteristic (mA) -4 IC -16uA DC CURRENT GAIN COLLECTOR CURRENT Ta=100ć -18uA -14uA -2 -12uA -10uA -8uA -6uA -1 IC — — COMMON EMITTER VCE=-6V hFE -20uA -3 hFE 300 COMMON EMITTER Ta=25ć -4uA 200 Ta=25ć 100 IB=-2uA 0 -0.1 -0 -0 -2 -4 -6 -8 COLLECTOR-EMITTER VOLTAGE VCEsat VCE -3 -1 -0.3 (V) IC VBEsat -1.2 r BASE-EMITTER SATURATION VOLTAGE VBEsat (V) -300 -0.8 Ta=100ć Ta=25ć -30 -100 -150 -30 IC (mA) IC — — Ta=25ć ou -100 -10 COLLECTOR CURRENT Ta=100ć -0.4 ol COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) -500 — -10 ȕ=10 ȕ=10 -3 -1 -10 -30 COLLECTOR CURRENT IC COMMON EMITTER VCE=-6V IC —— VBE Ta=25ć -1 -0.3 -0.1 -0.2 -0.4 -0.6 -0.8 —— IC (MHz) TRANSITION FREQUENCY fT -3 COLLECTOR CURRENT 3DJHI -30 -10 IC (mA) f=1MHz IE=0/IC=0 Ta=25ć 3 -1 -0.3 PC 250 VCE=-6V Ta=25ć -1 — —VCB/ VEB -3 REVERSE VOLTAGE 200 100 -100 -150 (mA) Cob 1 -0.1 -1.0 COLLECTOR POWER DISSIPATION PC (mW) fT IC Cib BASE-EMMITER VOLTAGE VBE (V) 300 -30 C CAPACITANCE -3 Cob/ Cib 20 10 Ta=100ć -10 -10 COLLECTOR CURRENT (pF) -30 -3 -1 -0.5 (mA) bl u COLLECTOR CURRENT IC (mA) -150 -100 -0.0 -0.2 -100 -150 ec -10 -0.3 V -10 -20 (V) —— Ta 200 150 100 50 0 -100 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 150 (ć ) 5(9 3$&.$*(287/,1( 627 bl u ec ol ou r 3ODVWLFVXUIDFHPRXQWHGSDFNDJHOHDGV 3DJHI 5(9