BAS16

BAS16 Silicon Epitaxial Planar Switching Diode Features • Small package • Low forward voltage • Fast reverse recovery time • Small total capacitance 3 1 2 Marking Code: 5D SOT-23 Plastic Package Applications • Ultra high speed switching application Symbol Value Unit VRRM 85 V r Absolute Maximum Ratings (Ta = 25 OC) Parameter VR 75 V IF 215 mA IFRM 500 mA IFSM 4 1 0.5 A Ptot 350 mW Tj 150 O Tstg - 65 to + 150 O Repetitive Peak Reverse Voltage Continuous Forward Current Repetitive Peak Forward Current t = 1 µs t = 1 ms t=1s ol Non-Repetitive Peak Forward Surge Current ou Continuous Reverse Voltage Junction Temperature bl u Storage Temperature Range ec Power Dissipation C C Characteristics at Ta = 25 OC Parameter Symbol Min. Max. Unit Forward Voltage at IF = 1 mA at IF = 10 mA at IF = 50 mA at IF = 150 mA VF VF VF VF - 715 855 1 1.25 mV mV V V Reverse Current at VR = 25 V at VR = 75 V at VR = 25 V, TJ = 150 OC at VR = 75 V, TJ = 150 OC IR IR IR IR - 30 1 30 50 nA µA µA µA V(BR)R 75 - V Diode Capacitance at VR = 0 , f = 1 MHz Cd - 2 pF Reverse Recovery Time at IF = IR = 10 mA, RL = 50 Ω trr - 4 ns Reverse Breakdown Voltage at IR = 100 µA Page 1 of 3 REV01: 09/2011 Typical Characteristics 400 300 200 100 100 0 200 TA, AMBIENT TEMPERATURE, (°C) TA = +75°C 10 TA = +25°C TA = -25°C 0.1 400 600 800 1000 1200 VF, INSTANTANEOUS FORWARD VOLTAGE (mV) Fig. 2, Typical Forward Characteristics ec VR = 75V 1 TA = +125°C ol 10 TA = +150°C VR = 20V 0.1 bl u IF, INSTANTANEOUS REVERSE CURRENT (µA) Fig. 1 Power Derating Curve 100 ou 0 1000 r IF, INSTANTANEOUS FORWARD CURRENT (mA) Pd, POWER DISSIPATION (mW) 500 0.01 0.001 0.0001 0 50 100 150 200 Tj, JUNCTION TEMPERATURE (°C) Fig. 3, Typical Reverse Characteristics Page 2 of 3 REV01: 09/2011 PACKAGE OUTLINE SOT-23 bl u ec ol ou r Plastic surface mounted package; 3 leads Page 3 of 3 REV01: 09/2011