BAV99

BAV99 SWITCHING DIODES FEATURES Fast Switching Speed For General Purpose Switching Applications High Conductance Absolute Maximum Ratings (Ta = 25 OC) Parameter Value Unit VRRM 85 V 75 V r Repetitive Peak Reverse Voltage Symbol Continuous Reverse Voltage ou VR IF 125 mA Continuous Forward Current (Single Diode Loaded) IF 215 mA Repetitive Peak Forward Current IFRM 450 mA ol Continuous Forward Current (Double Diode Loaded) Non-repetitive Peak Forward Surge Current at t = 1 s at t = 1 ms at t = 1 μs Ptot Junction Temperature Tj 150 O C Storage Temperature Range Tstg - 65 to + 150 O C Symbol Max. bl u ec Power Dissipation 0.5 1 4.5 350 Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 1 mA at IF = 10 mA at IF = 50 mA at IF = 150 mA Reverse Current at VR = 25 V at VR = 75 V at VR = 25 V, Tj = 150 OC at VR = 75 V, Tj = 150 OC Page 1 of 3 IFSM VF IR A mW Unit 0.715 0.855 1 1.25 30 1 30 50 nA µA µA µA V Diode Capacitance at VR = 0 , f = 1 MHz Cd 1.5 pF Reverse Recovery Time at IF = IR = 10 mA, IR = 1 mA, RL = 100 Ω trr 4 ns REV01: 09/2011 10 1000 IR, LEAKAGE CURRENT (nA) 100 10 1.0 0.1 0.1 0.01 1 0 2 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 1 Forward Characteristics 1.8 Tj = 25 °C 40 60 80 VR, REVERSE VOLTAGE (V) Fig. 2 Typical Leakage Current vs Reverse Voltage ol 1.6 20 r 0 1.4 ec 1.2 1.0 0.8 0.6 0.4 0.2 0 0.1 bl u CT, CAPACITANCE (pF) 1 ou IF, INSTANTANEOUS FORWARD CURRENT (mA) Typical Characteristics 1.0 10 100 VR, REVERSE VOLTAGE (V) Fig. 3 Typical Total Capacitance vs Reverse Voltage Page 2 of 3 REV01: 09/2011 PACKAGE OUTLINE SOT-23 bl u ec ol ou r Plastic surface mounted package; 3 leads Page 3 of 3 REV01: 09/2011