BAW56

BAW56 Silicon Epitaxial Planar Switching Diode Features • Small package • Low forward voltage • Fast reverse recovery time • Small total capacitance 3 1 2 SOT-23 Plastic Package Marking Code: A1 Applications • Ultra high speed switching application Absolute Maximum Ratings (Ta = 25 C) O Parameter Continuous Reverse Voltage Single Diode Loaded Double Diode Loaded Repetitive Peak Forward Current Unit VRRM 85 V VR 75 V IF 215 125 450 mA ou Forward Current (DC) Value r Peak Repetitive Reverse Voltage Symbol IFRM Ptot 0.5 1 4 350 RθJA 357 Tj 150 Tstg - 65 to + 150 Symbol Max. Unit Forward Voltage at IF = 1 mA at IF = 10 mA at IF = 50 mA at IF = 150 mA VF VF VF VF 715 855 1 1.25 mV mV V V Reverse Current at VR = 25 V at VR = 75 V at VR = 25 V, TJ = 150 OC at VR = 75 V, TJ = 150 OC IR IR IR IR 30 1 30 50 nA µA µA µA Diode Capacitance at VR = 0 , f = 1 MHz Cd 2 pF Reverse Recovery Time at IF = IR = 10 mA, RL = 100 Ω trr 4 ns at t = 1 s at t = 1 ms at t = 1 μs ol Non-repetitive Peak Forward Surge Current mA ec Power Dissipation Thermal Resistance from Junction to Ambient Air Operating Junction Temperature bl u Storage Temperature Range IFSM A mW C/W O C O C O Characteristics at Ta = 25 C O Parameter Page 1 of 3 REV01: 09/2011 1000 10,000 100 IR, LEAKAGE CURRENT (nA) 10 1.0 100 10 VR = 20V r 0.1 1000 1 0.01 0 0 100 ou IF, INSTANTANEOUS FORWARD CURRENT (mA) Typical Characteristics 1 2 Tj, JUNCTION TEMPERATURE (°C) Fig. 2 Leakage Current vs Junction Temperature ec ol VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 1 Forward Characteristics 200 PD, POWER DISSIPATION (mW) bl u 500 400 300 200 100 0 Page 2 of 3 100 TA, AMBIENT TEMPERATURE, (°C) Fig. 3 Power Derating Curve, Total Package 0 200 REV01: 09/2011 PACKAGE OUTLINE SOT-23 bl u ec ol ou r Plastic surface mounted package; 3 leads Page 3 of 3 REV01: 09/2011