BC3407

SOT-23 Plastic-Encapsulate MOSFETS ＢＣ３４０７ P-Channel Enhancement Mode Field Effect Transistor General Description The BC3407 uses advanced trench technology to provide excellent RDS(on) with low gate charge. This device is suitable for use as a load switch or in PWM applications. SOT-23 ou r 1. GATE 2. SOURCE 3. DRAIN ol MARKING: 3407 bl u ec Equivalent Circuit Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current ID -4.1 A Power Dissipation PD 350 mW RθJA 357 ℃/W Junction Temperature TJ 150 ℃ Storage Temperature Tstg -55~+150 ℃ Thermal Resistance from Junction to Ambient Page 1 f 4 REV01: 09/2011 Electrical characteristics (Ta=25℃ unless otherwise noted) Symbol Parameter Test Condition Min Typ Max Units Static characteristics Drain-source breakdown voltage BVDSS VGS = 0V, ID =-250µA Zero gate voltage drain current IDSS VDS =-24V,VGS = 0V -1 µA Gate-source leakage current IGSS VGS =±20V, VDS = 0V ±100 nA VGS =-10V, ID =-4.1A 60 mΩ VGS =-4.5V, ID =-3A 87 mΩ Drain-source on-resistance (note 1) Forward tranconductance (note 1) Gate threshold voltage RDS(on) gFS VGS(th) Diode forward voltage (note 1) VSD VDS =-5V, ID =-4A 5.5 VDS =VGS, ID =-250µA -1 Reverse transfer capacitance Crss Switching Characteristics (note 2) Turn-on delay time Notes: 1. 2. Page 2 f 4 V 75 pF 8.6 ns VGS=-10V,VDS=-15V, 5.0 ns RL=3.6Ω,RGEN=3Ω 28.2 ns 13.5 ns tf bl u Turn-off fall time td(off) -1 pF ec Turn-off delay time V 120 VDS =-15V,VGS =0V,f =1MHz td(on) tr Turn-on rise time r Coss -3 pF ou Output capacitance S 700 ol Ciss V IS=-1A,VGS=0V Dynamic characteristics (note 2) Input capacitance -30 Pulse test: Pulse width ≤300µs, duty cycle ≤2%. These parameters have no way to verify. REV01: 09/2011 Typical Characteristics Output Characteristics Transfer Characteristics -25 -5 VGS=-10V Ta=25℃ VGS=-4.5V -8V -5V -20 -4 VGS=-3.5V -10 ID -15 -3 DRAIN CURRENT DRAIN CURRENT ID (A) (A) VGS=-4V -2 -5 -1 -0 -0 -0 -1 -2 -3 -4 VDS -0 (V) -1 -2 GATE TO SOURCE VOLTAGE -3 VGS -4 (V) RDS(ON) —— ID ou r DRAIN TO SOURCE VOLTAGE -5 RDS(ON) —— VGS 140 100 Ta=25℃ Ta=25℃ (mΩ) VGS=-10V 40 20 -0 -2 -4 -6 DRAIN CURRENT IS —— ID -8 100 RDS(ON) ec 60 bl u ON-RESISTANCE RDS(ON) VGS=-4.5V ON-RESISTANCE (mΩ) 80 ol 120 80 ID=-4.3A 60 40 20 -10 (A) -2 -4 -6 GATE TO SOURCE VOLTAGE -8 VGS -10 (V) VSD -10 Ta=25℃ -0.1 SOURCE CURRENT IS (A) -1 -0.01 -1E-3 -1E-4 -1E-5 -0.2 -0.4 -0.6 -0.8 SOURCE TO DRAIN VOLTAGE Page 3 f 4 -1.0 VSD -1.2 (V) REV01: 09/2011 PACKAGE OUTLINE SOT-23 bl u ec ol ou r Plastic surface mounted package; 3 leads Page 4 f 4 REV01: 09/2011