BC807-40

BC807… TRANSISTOR (PNP) Features    Ideally Suited for Automatic Insertion Epitaxial Planar Die Construction For Switching, AF Driver and Amplifier Applications Complementary NPN Types Available (BC817)  SOT-23 1．BASE 2．EMITTER 3．COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted Value Units Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.5 A PC Collector Power Dissipation 0.3 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature MARKING:BC807-16:5A BC807-25:5B BC807-40:5C ol ou VCBO r Parameter Symbol ℃ ec -55-150 Parameter bl u ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage VCBO IC= -10μA, IE=0 -50 V Collector-emitter breakdown voltage VCEO IC= -10mA, IB=0 -45 V Emitter-base breakdown voltage VEBO IE= -1μA, -5 V Collector cut-off current ICBO VCB= -45V, IE=0 -0.1 μA Emitter cut-off current IEBO VEB= -4 V, -0.1 μA DC current gain IC=0 IC=0 807-16 807-25 hFE(1) VCE= -1V, IC= -100mA 807-40 100 250 160 400 250 600 Collector-emitter saturation voltage VCE(sat) IC=-500mA, IB= -50mA -0.7 V Base-emitter saturation voltage VBE(sat) IC= -500mA, IB= -50mA -1.2 V Transition frequency Page 1 f 3 fT VCE= -5V, f=100MHz IC= -10mA 100 MHz REV01: 09/2011 Typical Characteristics 400 1000 TA = 25°C f = 20MHz fT, GAIN BANDWIDTH PRODUCT (MHz) Pd, POWER DISSIPATION (mW) See Note 1 300 200 100 -VCE = 5.0V 1.0V 100 10 0 100 0 150°C 25°C ol -IC / -IB = 10 hFE, DC CURRENT GAIN 0.4 ec 0.2 25°C 0 0.1 bl u 150°C 0.1 1 10 -50°C 100 -50°C 10 0.1 1000 100 -IC, COLLECTOR CURRENT (mA) Fig. 3, Collector Sat. Voltage vs Collector Current 3.2 2.4 400 2 1.8 1.6 1.4 1.2 0.8 200 0.6 0.4 100 10 100 1000 100 2.8 300 1 -IC, COLLECTOR CURRENT (mA) Fig. 4, DC Current Gain vs Collector Current -IC, COLLECTOR CURRENT (mA) 500 1000 -VCE = 1V ou 1000 typical limits at TA = 25°C 0.3 100 r 0.5 -IC, COLLECTOR CURRENT (mA) 10 -IC, COLLECTOR CURRENT (mA) Fig. 2, Gain-Bandwidth Product vs Collector Current TSB, SUBSTRATE TEMPERATURE (°C) Fig. 1, Power Derating Curve -VCESAT, COLLECTOR SATURATION VOLTAGE (V) 1 200 0.35 80 0.3 0.25 60 0.2 40 0.15 0.1 20 -IB = 0.05mA -IB = 0.2mA 0 0 0 1 -VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 5, Typical Emitter-Collector Characteristics Page 2 f 3 2 0 10 20 -VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 6, Typical Emitter-Collector Characteristics REV01: 09/2011 PACKAGE OUTLINE SOT-23 bl u ec ol ou r Plastic surface mounted package; 3 leads Page 3 f 3 REV01: 09/2011