BC817-40

BC817… TRANSISTOR (NPN) FEATURE For general AF applications SOT-23 High collector current High current gain 1．BASE 2．EMITTER 3．COLLECTOR Low collector-emitter saturation voltage Complementary types: BC807 (PNP) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Units Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.5 A Symbol Parameter Collector Power Dissipation 0.3 Tj Junction Temperature 150 W ℃ Tstg Storage Temperature -55-150 ℃ ol ou PC r Value VCBO ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT IC= 10μA, IE=0 50 V Collector-emitter breakdown voltage VCEO IC= 10mA, IB=0 45 V Emitter-base breakdown voltage VEBO IE= 1μA, IC=0 5 V ec VCBO Collector-base breakdown voltage ICBO VCB= 45 V, IE=0 0.1 µA Emitter cut-off current IEBO VEB= 4V, IC=0 0.1 µA hFE(1) VCE= 1V, IC= 100mA 100 hFE(2) VCE= 1V, IC= 500mA 40 DC current gain bl u Collector cut-off current 600 Collector-emitter saturation voltage VCE(sat) IC= 500mA, IB= 50mA 0.7 V Base-emitter saturation voltage VBE(sat) IC= 500mA, IB= 50mA 1.2 V Base-emitter voltage VBE VCE= 1 V, IC= 500mA 1.2 V Collecter capactiance Cob VCB=10V, fT Transition frequency CLASSIFICATION OF 10 f=1MHz VCE= 5 V, IC= 10mA f=100MHz pF 100 MHz hFE (1) Rank BC817-16 BC817-25 BC817-40 Range 100-250 160-400 250-600 Marking 6A 6B 6C Page 1 f 3 REV01: 09/2011 Typical Characteristics 400 1000 TA = 25°C f = 20MHz fT, GAIN BANDWIDTH PRODUCT (MHz) Pd, POWER DISSIPATION (mW) See Note 1 300 200 100 VCE = 5V 10 0 0 1 200 100 0.4 ec 0.2 bl u 25°C 0.1 150°C 1 10 TA = 25°C -50°C 100 -50°C 150°C 0 0.1 10 100 1000 0.1 IC, COLLECTOR CURRENT (mA) Fig. 3, Collector Sat. Voltage vs Collector Current 3.2 1000 VCE = 1V ol IC / IB = 10 0.3 100 r ou typical limits at TA = 25°C hFE, DC CURRENT GAIN 1000 0.5 500 10 IC, COLLECTOR CURRENT (mA) Fig. 2, Gain-Bandwidth Product vs Collector Current TSB, SUBSTRATE TEMPERATURE (°C) Fig. 1, Power Derating Curve VCE(SAT), COLLECTOR SATURATION VOLTAGE (V) 1V 100 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 4, DC Current Gain vs Collector Current 100 2.8 0.35 400 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) 2.4 2 1.8 1.6 300 1.4 1.2 0.8 200 0.6 0.4 100 80 0.3 0.25 60 0.2 40 0.15 0.1 20 IB = 0.05mA IB = 0.2mA 0 0 0 1 VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 5, Typical Emitter-Collector Characteristics Page 2 f 3 2 0 10 20 VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 6, Typical Emitter-Collector Characteristics REV01: 09/2011 PACKAGE OUTLINE SOT-23 bl u ec ol ou r Plastic surface mounted package; 3 leads Page 3 f 3 REV01: 09/2011