BC847B

BC846/847/848/849/850 TRANSISTOR（NPN） FEATURES • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching and amplification. 1.Base 2.Emitter 3.Collector SOT-23 Plastic Package DESCRIPTION NPN transistor in a SOT23 plastic package. ec ABSOLUTE MAXIMUM RATINGS (TA=25°°C) ol ou r PNP complements: BC856 /857/858/859/860. Symbol Value Units BC846 BC847, BC850 BC848, BC849 VCBO VCBO VCBO 80 50 30 V V V Collector Emitter Voltage BC846 BC847, BC850 BC848, BC849 VCEO VCEO VCEO 65 45 30 V V V Emitter Base Voltage BC846, BC847 BC848, BC849, BC850 VEBO VEBO 6 5 V V Collector Current IC 100 mA Peak Collector Current ICM 200 mA Power Dissipation Ptot 300 mW Thermal Resistance from Junction to Ambient Air RθJA 417 Junction Temperature TJ 150 O Storage Temperature Range TS - 65 to + 150 O Parameter bl u Collector Base Voltage Page 1 f 4 C/W O C C REV02: 06/2019 ELECTRICAL CHARACTERISTICS (TA=25°°C) Parameter Symbol Min. Typ. Max. Units Collector-base breakdown voltage at IC = 10 µA, IE = 0 BC846 BC847/850 80 V(BR)CBO 50 BC848/849 30 Collector-emitter breakdown voltage at IC = 10 mA, IB = 0 BC846 BC847/850 65 V(BR)CEO 45 BC848/849 30 Emitter-base breakdown voltage at IE = 1 µA, IC = 0 BC846/847 V(BR)EBO 6 BC848-850 DC Current Gain at VCE = 5 V, IC = 2 mA 5 A B C Base-emitter saturation voltage at IC = 100 mA, IB = 5 mA bl u Base Emitter On Voltage at IC = 2 mA, VCE = 5 V at IC = 10 mA, VCE = 5 V 220 450 800 - VCEsat VCEsat - - 250 600 mV mV VBEsat VBEsat - 700 900 850 1100 mV mV VBE(on) VBE(on) 580 - - 700 770 mV mV ICBO - - 15 nA fT - 300 - MHz Cob - - 6 pF Cib - 9 - pF NF NF NF NF - - 10 4 4 3 dB dB dB dB r - ou ec at IC = 10 mA, IB = 0.5 mA 110 200 420 ol Collector Emitter Saturation Voltage at IC = 10 mA, IB = 0.5 mA at IC = 100 mA, IB = 5 mA hFE hFE hFE Collector Cutoff Current at VCB = 30 V Current Gain Bandwidth Product at VCE = 5 V, IC = 10 mA, f = 100 MHz Output Capacitance at VCB = 10 V, f = 1 MHz Input Capacitance at VEB = 0.5 V, f = 1 MHz Noise Figure at IC = 200 µA, VCE = 5 V BC846, BC847, BC848 RG = 2 KΩ, f = 1 KHz BC849, BC850 at IC = 200 µA,VCE = 5 V, BC849 RG = 2 KΩ, f = 30 ~15 KHz BC850 MARKING CODE TYPE 846A 846B 846C 847A 847B 847C MARK 1A 1B 1C 1E 1F 1G Page 2 f 4 848A 848B 848C 849A 849B 849C 850A 850B 1J 1K 1L 2A 2B 2C 2E 2F 850C 2G REV02: 06/2019 Typical Characteristics Static Characteristic DC Current Gain 10000 IB=400µA IB=350µA IB=300µA IB=250µA 80 60 DC Current Gain, hFE Collector Current , IC(mA) 100 I B=200µA 40 IB=150µA I B=100µA 20 0 0 4 8 12 I B=50µA 16 20 1000 VCE=5V 100 10 1 10 Collector-Emitter Voltage, VCE(V) 100 1000 VCE(sat) 10 1 10 ou 100 Collect current, I C(mA) 100 ec VBE(SAT) 1000 Base-Emitter on Voltage VCE=2V ol Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 10000 IC=10IB bl u Saturation Voltage, VBE(SAT), VCE(SAT) (V) r Collector Current, IC(mA) 100 10 1 0.1 0.1 0.2 0.4 1000 Collector Current, IC(mA) f=1MHz 10 1 10 100 1000 Current Gain-Bandwidth Product, f T(MHz) Capacitance, C ob(pF) 1000 Collector-Base Voltage, VCB( V) Page 3 f 4 1.2 Current Gain Bandwidth Product 100 1 0.8 1.0 Base-Emitter Voltage, VBE (V) Collector Output Capacitance 0.1 0.6 V∞=5V 100 10 1 0.1 1 10 100 Collector Current, I C(mA) REV02: 06/2019 PACKAGE OUTLINE SOT-23 bl u ec ol ou r Plastic surface mounted package; 3 leads Page 4 f 4 REV02: 06/2019