BC857B

BC856/857/858/859/860 TRANSISTOR（PNP） FEATURES • Switching and Amplifier Applications • Suitable for automatic insertion in thick and thin-film circuits • Low Noise: BC859, BC860 • Complement to BC846 ... BC850 ol ou r 1.Base 2.Emitter 3.Collector SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 C) O Parameter Value Unit -VCBO -VCBO -VCBO -VCEO -VCEO -VCEO 80 50 30 65 45 30 V V V V V V -VEBO 5 V Collector Current -IC 100 mA Peak Collector Current -ICM 200 mA Power Dissipation Ptot 300 mW Thermal Resistance from Junction to Ambient Air RθJA 417 Tj 150 O Tstg - 65 to + 150 O bl u Collector Base Voltage ec Symbol Collector Emitter Voltage BC856 BC857, BC860 BC858, BC859 BC856 BC857, BC860 BC858, BC859 Emitter Base Voltage Junction Temperature Storage Temperature Range Page 1 f 4 C/W O C C REV02: 06/2019 ELECTRICAL CHARACTERISTICS (TA=25°°C) Parameter DC Current Gain at -VCE = 5 V, -IC = 2 mA Symbol Min. Max. Unit hFE hFE hFE 110 200 420 220 450 800 - -ICBO - 15 nA BC856 BC857, BC860 BC858, BC859 -V(BR)CBO -V(BR)CBO -V(BR)CBO 80 50 30 - V V V BC856 BC857, BC860 BC858, BC859 -V(BR)CES -V(BR)CES -V(BR)CES 80 50 30 - V V V BC856 BC857, BC860 BC858, BC859 -V(BR)CEO -V(BR)CEO -V(BR)CEO 65 45 30 - V V V -V(BR)EBO 5 - V -VCE(sat) -VCE(sat) - 0.3 0.65 V V -VBE(on) -VBE(on) 0.6 - 0.75 0.82 V V fT 100 - MHz Cob - 6 pF NF - 10 4 4 2 dB Collector Base Cutoff Current at -VCB = 30 V Collector Base Breakdown Voltage at -IC = 10 µA Collector Emitter Breakdown Voltage at -IC = 10 µA ou Collector Emitter Breakdown Voltage at -IC = 10 mA r Current Gain Group A B C bl u ec ol Emitter Base Breakdown Voltage at -IE = 1 µA Collector Emitter Saturation Voltage at -IC = 10 mA, -IB = 0.5 mA at -IC = 100 mA, -IB = 5 mA Base Emitter On Voltage at -IC = 2 mA, -VCE = 5 V at -IC = 10 mA, -VCE = 5 V Current Gain Bandwidth Product at -VCE = 5 V, -IC = 10 mA, f = 100 MHz Output Capacitance at -VCB = 10 V, f = 1 MHz Noise Figure at -IC = 200 µA, -VCE = 5 V, BC856, BC857, BC858 RG = 2 KΩ, f = 1 KHz BC859, BC860 BC859 at -IC = 200 µA, -VCE = 5 V, RG = 2 KΩ, f = 30 ~15 KHz BC860 MARKING CODE TYPE 856A 856B 856C 857A 857B 857C MARK 3A 3B 3C 3E 3F 3G Page 2 f 4 858A 858B 858C 859A 859B 859C 860A 860B 3J 3K 3L 4A 4B 4C 4E 4F 860C 4G REV02: 06/2019 Typical Characteristics -50 1000 IB = - 400µ A IB = - 350µA -40 VCE = - 5V IB = - 300µA -35 IB = - 250µA -30 IB = - 200µA -25 IB = - 150µA -20 IB = - 100µA -15 -10 hFE, DC CURRENT GAIN IC[mA], COLLECTOR CURRENT -45 100 IB = - 50µA -5 10 -0.1 -0 -0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 r -0.01 -0.1 -1 ec -0.1 VCE(sat) -10 -10 -1 -0.1 -100 -0.2 -0.4 1 -10 -100 VCB[V], COLLECTOR-BASE VOLTAGE Figure 5. Collector Output Capacitance -0.8 -1.0 -1.2 Figure 4. Base-Emitter On Voltage fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT f=1MHz IE=0 10 -0.6 VBE[V], BASE-EMITTER VOLTAGE Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Cob[pF], CAPACITANCE VCE = - 5V ol V BE(sat) ou -100 IC = 10 IB IC[mA], COLLECTOR CURRENT -10 IC[mA], COLLECTOR CURRENT Page 3 f 4 -100 Figure 2. DC current Gain bl u VBE(sat), VCE(sat)[V], SATURATION VOLTAGE Figure 1. Static Characteristic -1 -10 IC[mA], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE -1 -1 1000 f=1MHz IE=0 100 10 -1 -10 IC[mA], COLLECTOR CURRENT Figure 6. Current Gain Bandwidth Product REV02: 06/2019 PACKAGE OUTLINE SOT-23 bl u ec ol ou r Plastic surface mounted package; 3 leads Page 4 f 4 REV02: 06/2019