BZT52C9V1

BZT52C2V4W - BZT52C75W SILICON PLANAR ZENER DIODES Features • Ideally suited for automated assembly processes • Total power dissipation: max. 500 mW PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 Power Dissipation Junction Temperature bl u Storage Temperature Range ec Parameter ol Absolute Maximum Ratings (Ta = 25℃) ou r Top View Simplified outline SOD-123 and symbol Symbol Value Unit Ptot 500 mW TJ 150 ℃ Tstg - 65 to + 150 ℃ Symbol Max. Unit RthJA 250 ℃/W VF 0.9 V Characteristics at Ta = 25℃ Parameter Thermal Resistance Junction to Ambient Air Forward Voltage at IF = 10 mA Page 1 f 4 REV01: 09/2011 Characteristics at Ta = 25℃ Zener Voltage Range 1) Type Marking Code Reverse Leakage Current Dynamic Impedance Vznom VZT at IZT ZZT at IZT ZZK at IZK IR at VR V V mA Max. (Ω) mA Max. (Ω) mA Max. (μA) V BZT52C2V4W MH 2.4 2.2...2.6 5 100 5 600 1 50 1 BZT52C2V7W MJ 2.7 2.5...2.9 5 100 5 600 1 20 1 BZT52C3V0W MK 3.0 2.8...3.2 5 95 5 600 1 10 1 BZT52C3V3W MM 3.3 3.1...3.5 5 95 5 600 1 5 1 BZT52C3V6W MN 3.6 3.4...3.8 5 90 5 600 1 5 1 BZT52C3V9W MP 3.9 3.7...4.1 5 90 5 600 1 3 1 BZT52C4V3W MR 4.3 4...4.6 5 90 5 600 1 3 1 BZT52C4V7W MX 4.7 4.4...5 5 80 5 500 1 3 2 BZT52C5V1W MY 5.1 4.8...5.4 5 60 5 480 1 2 2 BZT52C5V6W MZ 5.6 5.2...6 5 40 BZT52C6V2W NA 6.2 5.8...6.6 5 10 BZT52C6V8W NB 6.8 6.4...7.2 5 BZT52C7V5W NC 7.5 7...7.9 5 BZT52C8V2W ND 8.2 7.7...8.7 5 BZT52C9V1W NE 9.1 8.5...9.6 400 1 1 2 150 1 3 4 15 5 80 1 2 4 15 5 80 1 1 5 15 5 80 1 0.7 5 5 100 1 0.5 6 ol ou r 5 5 5 15 NF 10 9.4...10.6 5 20 5 150 1 0.2 7 BZT52C11W NH 11 10.4...11.6 5 20 5 150 1 0.1 8 BZT52C12W NJ 12 11.4...12.7 5 25 5 150 1 0.1 8 BZT52C13W NK 13 12.4...14.1 5 30 5 170 1 0.1 8 BZT52C15W NM 15 13.8...15.6 5 30 5 200 1 0.1 10.5 5 40 5 200 1 0.1 11.2 BZT52C18W BZT52C20W BZT52C22W bl u BZT52C16W ec BZT52C10W NN 16 15.3...17.1 NP 18 16.8...19.1 5 45 5 225 1 0.1 12.6 NR 20 18.8...21.2 5 55 5 225 1 0.1 14 NX 22 20.8...23.3 5 55 5 250 1 0.1 15.4 BZT52C24W NY 24 22.8...25.6 5 70 5 250 1 0.1 16.8 BZT52C27W NZ 27 25.1...28.9 2 80 2 300 0.5 0.1 18.9 BZT52C30W PA 30 28...32 2 80 2 300 0.5 0.1 21 BZT52C33W PB 33 31...35 2 80 2 325 0.5 0.1 23.1 BZT52C36W PC 36 34...38 2 90 2 350 0.5 0.1 25.2 BZT52C39W PD 39 37...41 2 130 2 350 0.5 0.1 27.3 BZT52C43W 6A 43 40...46 2.5 130 2 500 1 2 33 BZT52C47W 6B 47 44...50 2.5 150 2 500 1 2 36 BZT52C51W 6C 51 48...54 2.5 180 2 500 1 1 39 BZT52C56W 6D 56 52...60 2.5 180 2 500 1 1 43 BZT52C62W 6E 62 58...66 2.5 200 2 500 1 0.2 47 BZT52C68W 6F 68 64...72 2.5 250 2 500 1 0.2 52 BZT52C75W 6H 75 70...79 2.5 300 2 500 1 0.2 57 1) VZT is tested with pulses (20 ms). Page 2 f 4 REV01: 09/2011 Typical Characteristics 0.6 50 40 IZ, ZENER CURRENT (mA) PD, POWER DISSIPATION (W) 0.4 0.3 0.2 C5V6 C4V7 C6V8 C6V2 C8V2 20 Test Current IZ 5.0mA 10 0 0 25 75 50 100 125 150 0 10 C10 C18 ec C15 Test current IZ 2mA C22 bl u 10 C27 Test current IZ 5mA C33 C36 10 20 30 VZ, ZENER VOLTAGE (V) Fig. 3 Zener Breakdown Characteristics IZ, ZENER CURRENT (mA) 0 3 4 5 6 8 9 7 VZ, ZENER VOLTAGE (V) Fig. 2 Zener Breakdown Characteristics 10 Tj = 25°C C39 8 ol C12 20 2 ou Tj = 25°C IZ, ZENER CURRENT (mA) 30 1 r TA, AMBIENT TEMPERATURE (°C) Fig. 1 Power Dissipation vs Ambient Temperature IZ, ZENER CURRENT (mA) C3V9 30 0.1 0 C2V7 C3V3 0.5 0 Tj = 25°C 6 4 Test Current IZ 2mA 2 0 40 C43 20 30 40 50 60 70 80 90 100 VZ, ZENER VOLTAGE (V) Fig. 4 Zener Breakdown Characteristics 10 C47 C51 C56 C62 Test Current IZ 2.5mA C68 C75 VZ, ZENER VOLTAGE (V) Fig. 5 Zener Breakdown Characteristics Page 3 f 4 REV01: 09/2011 PACKAGE OUTLINE Plastic surface mounted package; 2 leads bl u ec ol ou r SOD-123 Page 4 f 4 REV01: 09/2011