C945

TRANSISTOR (NPN) C945 FEATURE Excellent hFE Linearity SOT-23 Low noise Complementary to A733 MARKING: 1．BASE 2．EMITTER 3．COLLECTOR CR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Parameter Units r Value VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current -Continuous PC Collector Power Dissipation TJ Junction Temperature Tstg Storage Temperature V ou 60 V 5 V 150 mA 200 mW 150 ℃ -55-150 ℃ ec 50 ol Symbol bl u ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100uA, IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA , IB=0 50 V Emitter-base breakdown voltage V(BR)EBO IE=0.1mA, IC=0 5 V Collector cut-off current ICBO VCB=60V, IE=0 0.1 µA Collector cut-off current ICER VCE=55V, R=10MΩ 0.1 µA Emitter cut-off current IEBO VEB=5V, IC=0 0.1 µA hFE(1) VCE=6V, IC=1mA 200 hFE(2) VCE=6V, IC=0.1mA 40 DC current gain 400 Collector-emitter saturation voltage VCE(sat) IC=100mA, IB=10mA 0.3 V Base-emitter saturation voltage VBE(sat) IC=100mA, IB=10mA 1 V Transition frequency fT Collector output capacitance Cob Noise figure NF Page 1 f 3 VCE=6V,IC=10mA,f =30 MHz VCB=10V, IE=0, 150 MHz f=1MHZ VCE=6V, IC=0.1mA Rg=10kΩ, f=1kMHZ 4 3.0 pF 10 dB REV01: 09/2011 Typical Characteristics Static Characteristic (mA) IC 27uA 24uA Ta=25℃ 300 DC CURRENT GAIN COLLECTOR CURRENT 8 21uA 18uA 6 IC Ta=100℃ COMMON EMITTER Ta=25℃ 30uA 10 hFE —— 1000 hFE 12 15uA 12uA 4 100 9uA 30 6uA 2 VCE=6V IB=3uA 0 2 6 8 10 COLLECTOR-EMITTER VOLTAGE VCE 12 r 1000 ec β=10 1 10 3 30 COLLECTOR CURRENT 15 Cob / Cib IC 100 (pF) C CAPACITANCE 400 β=10 0.3 1 10 3 PC 0.25 f=1MHz IE=0 /IC=0 10 Cib 5 Cob —— 100 150 30 IC (mA) Ta 0.20 0.15 0.10 0.05 0.00 0.3 1 REVERSE BIAS VOLTAGE Page 2 f 3 Ta=100℃ COLLECTOR CURRENT Ta=25℃ 0 0.1 Ta=25℃ 600 (mA) VCB / VEB —— 150 800 200 0.1 150 COLLECTOR POWER DISSIPATION PC (W) 10 100 (mA) IC ol Ta=25℃ 30 IC VBEsat —— ou 100 bl u COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) 300 Ta=100℃ 30 10 COLLECTOR CURRENT IC VCEsat —— 3 1 (V) BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) 0 10 0.7 10 3 V (V) 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 150 (℃ ) REV01: 09/2011 PACKAGE OUTLINE SOT-23 bl u ec ol ou r Plastic surface mounted package; 3 leads Page 3 f 3 REV01: 09/2011