MM1Z2V0~MM1Z75
Silicon Planar Zener Diodes
PINNING
Features
• Total power dissipation: max. 500 mW
• Small plastic package suitable for surface mounted design
• Tolerance approximately ± 5%
DESCRIPTION
PIN
1
Cathode
2
Anode
2
1
Top View
Simplified outline SOD-123 and symbol
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Power Dissipation
Junction Temperature
Thermal Resistance Junction to Ambient Air
bl
Page 1 f 4
Ptot
500
mW
TJ
150
O
TStg
- 55 to + 150
O
Symbol
Max.
RthA
340
VF
0.9
C
C
co
ue
Parameter
Forward Voltage
at IF = 10 mA
Unit
lo
Storage Temperature Range
Characteristics at Ta = 25 OC
Value
ur
Symbol
Unit
C/W
O
V
REV01: 09/2011
Characteristics at Ta = 25 OC
1)
Ω
at I Z
mA
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2
2
2
2
2
2
2
2
2
2
2
2
ur
100
100
100
110
120
130
130
130
130
130
130
80
50
30
30
30
30
30
30
35
35
40
40
45
50
55
60
70
80
80
90
100
130
150
180
180
200
250
300
lo
2.0
2.2
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
ZZT (Max.)
co
4A
4B
4C
4D
4E
4F
4H
4J
4K
4M
4N
4P
4R
4X
4Y
4Z
5A
5B
5C
5D
5E
5F
5H
5J
5K
5M
5N
5P
5R
5X
5Y
5Z
6A
6B
6C
6D
6E
6F
6H
V znom
V
l ZT for
V ZT
mA
V
5
1.8...2.15
5
2.08...2.33
5
2.28...2.56
5
2.5...2.9
5
2.8...3.2
5
3.1...3.5
5
3.4...3.8
5
3.7...4.1
5
4...4.6
5
4.4...5
5
4.8...5.4
5
5.2...6
5
5.8...6.6
5
6.4...7.2
5
7...7.9
5
7.7...8.7
5
8.5...9.6
5
9.4...10.6
5
10.4...11.6
5
11.4...12.7
5
12.4...14.1
5
13.8...15.6
5
15.3...17.1
5
16.8...19.1
5
18.8...21.2
5
20.8...23.3
5
22.8...25.6
5
25.1...28.9
5
28...32
5
31...35
5
34...38
2.5
37...41
2.5
40...46
2.5
44...50
2.5
48...54
2.5
52...60
2.5
58...66
2.5
64...72
2.5
70...79
Dynamic Impedance 2)
ue
MM1Z2V0
MM1Z2V2
MM1Z2V4
MM1Z2V7
MM1Z3V0
MM1Z3V3
MM1Z3V6
MM1Z3V9
MM1Z4V3
MM1Z4V7
MM1Z5V1
MM1Z5V6
MM1Z6V2
MM1Z6V8
MM1Z7V5
MM1Z8V2
MM1Z9V1
MM1Z10
MM1Z11
MM1Z12
MM1Z13
MM1Z15
MM1Z16
MM1Z18
MM1Z20
MM1Z22
MM1Z24
MM1Z27
MM1Z30
MM1Z33
MM1Z36
MM1Z39
MM1Z43
MM1Z47
MM1Z51
MM1Z56
MM1Z62
MM1Z68
MM1Z75
Zener Voltage Range 1)
bl
Type
Marking
Code
Reverse Leakage Current
I R (Max.)
μA
120
120
120
120
50
20
10
5
5
2
2
1
1
0.5
0.5
0.5
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
2
2
2
1
1
0.2
0.2
0.2
at VR
V
0.5
0.7
1
1
1
1
1
1
1
1
1.5
2.5
3
3.5
4
5
6
7
8
9
10
11
12
13
15
17
19
21
23
25
27
30
33
36
39
43
47
52
57
VZ is tested with pulses (20 ms).
ZZT is measured at IZ by given a very small A.C. current signal.
2)
Page 2 f 4
REV01: 09/2011
Typical Characteristics
Breakdown characteristics
Tj = constant (pulsed)
mA
50
Tj=25o C
3V9
2V7
6V8
4V7
Iz
3V3
40
8V2
5V6
30
ur
20
0
1
3
2
4
5
co
0
lo
Test current Iz
5mA
10
8
7
6
9
10 V
Vz
Breakdown characteristics
ue
Tj = constant (pulsed)
mA
30
Tj=25 oC
10
12
bl
Iz
15
20
18
22
27
Test current Iz
5mA
10
33
0
0
10
20
30
40 V
Vz
Page 3 f 4
REV01: 09/2011
PACKAGE OUTLINE
SOD-123
bl
ue
co
lo
ur
Plastic surface mounted package; 2 leads
Page 4 f 4
REV01: 09/2011
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