MMBT13001

MMBT13001 NPN Silicon Epitaxial Planar Transistor MARKING:BJ TO-23 Symbel Value Unit Collector Base Voltage VCBO 700 V Collector Emitter Voltage VCEO 420 V Emitter Base Voltage VEBO 10 V r Absolute Maximum Ratings (Ta = 25 OC) Parameter aramete Plastic Package IC 150 mA Ptot 300 mW Tj 150 O Tstg - 55 to + 150 O Collector Current ou Power Dissipation Junction Temperature Characteristics at Ta = 25 OC ec er Parameter ol Storage Temperature Range bl u DC Current Gain at VCE = 20 V, IC = 10 mA Collector Base Cutoff Current at VCB = 700 V Collector Emitter Cutoff Current at VCE = 420 V Emitter Base Cutoff Current at VEB = 10 V Collector Base Breakdown Voltage at IC = 100 µA Collector Emitter Breakdown Voltage at IC = 1 mA Emitter Base Breakdown Voltage at IE = 100 µA Collector Emitter Saturation Voltage at IC = 50 mA, IB = 10 mA Base Emitter Saturation Voltage at IC = 50 mA, IB = 10 mA Transition Frequency at VCE = 10 V, IC = 50 mA, f = 1 MHz Storage Time at UI9600, IC = 100 mA Rise Time at UI9600, IC = 100 mA Fall Time at UI9600, IC = 100 mA Page 1 f 3 C C Symbel Min. Max. Unit hFE 15 25 - ICBO - 100 μA ICEO - 100 μA IEBO - 100 μA V(BR)CBO 700 - V V(BR)CEO 420 - V V(BR)EBO 10 - V VCE(sat) - 1.05 V VBE(sat) - 1.55 V fT 5 - MHz ts - 3 μs tr - 1 μs tf - 1 μs REV01: 09/2011 bl u ec ol ou r Typical Characteristics Page 2 f 3 REV01: 09/2011 PACKAGE OUTLINE SOT-23 bl u ec ol ou r Plastic surface mounted package; 3 leads Page 3 f 3 REV01: 09/2011