MMBT3904

TRANSISTOR (NPN) MMBT3904 FEATURES • • • Epitaxial Planar Die Construction Complementary PNP Type Available (MMBT3906) Ideal for Medium Power Amplification and Switching SOT-23 MARKING: 1AM 1．BASE 2．EMITTER 3．COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Parameter Value VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current PC Total Device Dissipation RθJA ThermalResistanceFromJunction toAmbient TJ Junction Temperature Tstg Storage Temperature V ou 60 Unit r Symbol V 6 V 200 mA 200 mW 625 ℃/W 150 ℃ bl u ec ol 40 ℃ -55 ~ +150 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Max Unit Collector-base breakdown voltage V(BR)CBO IC= 10μA, IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC= 1mA, IB=0 40 V Emitter-base breakdown voltage V(BR)EBO IE=10μA, IC=0 6 V Collector cut-off current ICBO VCB= 60V, IE=0 0.1 μA Collector cut-off current ICEX VCE= 30V, VBE(off)=3V 50 nA IEBO VEB= 5V, IC=0 0.1 μA hFE(1) VCE= 1V, IC=10mA 100 hFE(2) VCE= 1V, IC= 50mA 60 hFE(3) VCE= 1V, IC= 100mA 30 Collector-emitter saturation voltage VCE(sat) IC= 50mA, IB= 5mA 0.3 V Base-emitter saturation voltage VBE(sat) IC= 50mA, IB= 5mA 0.95 V Emitter cut-off current DC current gain Transition frequency fT VCE= 20V, IC=10mA, f=100MHz Delay Time td VCC= 3V, Rise Time tr ts tf IC= 10mA, IB1=-IB2=1.0mA Storage Time Fall Time Page 1 f 3 VCC= 3V, VBE=-0.5V IC=10mA, IB1=-IB2=1mA 300 300 MHz 35 nS 35 nS 200 nS 50 nS REV01: 09/2011 Typical Characteristics aracteristic Static Ch IC COLLECTOR CURRENT (mA) 300uA 250uA 200uA 40 150uA Ta=25℃ 200 100 100uA 20 Ta=100℃ 300 350uA 60 IC — — COMMON EMITTER VCE=1V COMMON EMITTER Ta=25℃ 500uA 450uA 400uA 80 hFE 400 DC CURRENT GAIN hFE 100 IB=50uA 0 0 4 8 12 16 COLLECTOR-EMITTER VOLTAGE VCEsat 600 — VCE 0 0.1 20 1 0.3 IC VBEsat 1.2 30 10 3 COLLECTOR CURRENT (V) IC 100 (mA) IC —— Ta=25℃ r BASE-EMITTER SATURATION VOLTAGE VBEsat (V) 0.8 Ta=100℃ ou COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) 300 100 Ta=25℃ Ta=100℃ 0.4 ol 30 β=10 β=10 1 10 3 (mA) 200 bl u IC 1 Cob/ Cib 9 — — 3 300 (mA) VCB/ VEB f=1MHz IE=0/IC=0 Ta=25℃ Cib Ta=25℃ 1 IC C 10 100 30 Ta=100℃ 3 Cob 0.3 0.1 0.2 0.6 0.4 0.8 1.0 1 0.1 1.2 fT 300 1 0.3 BASE-EMITTER VOLTAGE VBE (V) —— IC PC 250 VCE=20V Ta=25℃ 10 3 REVERSE VOLTAGE —— V 20 (V) Ta 200 fT 200 150 COLLECTOR POWER DISSIPATION PC (mW) TRANSITION FREQUENCY (MHz) 10 3 COLLECTOR CURRENT —— VBE COMMON EMITTER VCE=1V 30 COLLECTOR CURRENT (mA) IC ec IC 100 100 30 COLLECTOR CURRENT 0.0 CAPACITANCE (pF) 10 100 50 100 1 3 10 COLLECTOR CURRENT Page 2 f 3 30 IC (mA) 60 0 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 150 (℃ ) REV01: 09/2011 PACKAGE OUTLINE SOT-23 bl u ec ol ou r Plastic surface mounted package; 3 leads Page 3 f 3 REV01: 09/2011