MMBT3906

TRANSISTOR（PNP） MMBT3906 FEATURES Complementary Type The NPN Transistor MMBT3904 is Recommended SOT-23 Epitaxial Planar Die Construction 1．BASE 2．EMITTER 3．COLLECTOR MARKING: 2A MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Value -40 VCEO Collector-Emitter Voltage -40 VEBO Emitter-Base Voltage IC Collector Current PC Total Device Dissipation Unit V V ou VCBO Collector-Base Voltage r Parameter Symbol -5 V -200 mA mW ol 200 Thermal Resistance Junction to Ambient 625 TJ Junction Temperature 150 ℃ Tstg Storage Temperature ec RθJA ℃/W ℃ -55 ~ +150 bl u ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Max Unit Collector-base breakdown voltage V(BR)CBO IC=-10μA, IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA, IB=0 -40 V Emitter-base breakdown voltage V(BR)EBO IE=-10μA, IC=0 -5 V Collector cut-off current ICBO VCB=-40V, IE=0 -0.1 µA Collector cut-off current ICEX VCE=-30V, VBE(off)=-3V -50 nA IEBO VEB=-5V, IC=0 -0.1 µA hFE(1) VCE=-1V, IC=-10mA 100 hFE(2) VCE=-1V, IC= -50mA 60 hFE(3) VCE=-1V, IC= -100mA 30 Emitter cut-off current DC current gain Collector-emitter saturation voltage VCE(sat) IC=-50mA, Base-emitter saturation voltage VBE(sat) IC= -50mA, IB=-5mA Transition frequency Delay Time Rise Time Storage Time Fall Time Page 1 f 3 fT td tr ts tf B= -5mA VCE=-20V, IC=-10mA,f=100MHz VCC=-3V, VBE=-0.5V 300 -0.3 V -0.95 V 300 MHz 35 nS IC=-10mA, IB1=-IB2=-1mA 35 nS VCC=-3V, 225 nS 75 nS IC=-10mA, IB1=-IB2=-1mA REV01: 09/2011 Typical Characteristics Static Characteristic COMMON EMITTER -500uA Ta=25℃ -450uA -400uA -80 -250uA -200uA -40 COMMON EMITTER VCE=-1V Ta=100℃ -350uA -300uA -60 IC — — hFE 300 DC CURRENT GAIN hFE COLLECTOR CURRENT (mA) IC -100 -150uA 200 Ta=25℃ 100 -100uA -20 IB=-50uA -0 -0 -4 -8 -12 COLLECTOR-EMITTER VOLTAGE VCEsat -500 — VCE 0 -0.1 -20 -16 -1 -0.3 -10 -3 COLLECTOR CURRENT (V) IC VBEsat -1.2 -100 -30 IC -200 (mA) IC — — r BASE-EMITTER SATURATION VOLTAGE VBEsat (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) -300 Ta=100℃ Ta=25℃ ou -0.8 -100 Ta=25℃ Ta=100℃ ol -0.4 -30 β=10 -1 -3 -10 -30 COLLECTOR CURRENT IC -100 IC -1 β=10 —— VBE Cob/ Cib 9 -3 Ta=25℃ -1 -100 IC -200 (mA) VCB/ VEB f=1MHz IE=0/IC=0 Ta=25℃ Cob Cib 3 -0.3 -0.4 -0.6 1 -0.1 -1.2 -1.0 -0.8 fT 600 —— IC VCE=-20V Ta=25℃ -1 -3 REVERSE VOLTAGE V -0.3 BASE-EMITTER VOLTAGE VBE (V) PC 250 —— -10 -20 (V) Ta 200 fT 400 COLLECTOR POWER DISSIPATION PC (mW) TRANSITION FREQUENCY (MHz) — — C -10 -30 COLLECTOR CURRENT Ta=100℃ -0.1 -0.2 150 100 50 200 -1 -3 -10 COLLECTOR CURRENT Page 2 f 3 -10 -3 (mA) CAPACITANCE (pF) COLLECTOR CURRENT (mA) IC -30 -0.0 -200 bl u COMMON EMITTER VCE=-1V -100 ec -10 -30 IC (mA) -50 0 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 150 (℃ ) REV01: 09/2011 PACKAGE OUTLINE SOT-23 bl u ec ol ou r Plastic surface mounted package; 3 leads Page 3 f 3 REV01: 09/2011