MMBT5401

TRANSISTOR (PNP) MMBT5401 FEATURES Complementary to MMBT5551 Ideal for medium power amplification and switching SOT-23 1．BASE 2．EMITTER 3．COLLECTOR MARKING: 2L MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Value Units V Collector-Base Voltage -160 VCEO Collector-Emitter Voltage -150 VEBO Emitter-Base Voltage IC Collector Current -Continuous PC Collector Power Dissipation Tj Junction Temperature Tstg Storage Temperature V ou VCBO r Parameter Symbol -5 V -0.6 A 0.3 W ℃ -55-150 ℃ ec ol 150 ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) bl u Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Page 1 f 3 Symbol Test conditions V(BR)CBO IC= -100µA, V(BR)CEO IC= -1mA, V(BR)EBO IE= -10µA, IC=0 IE=0 IB=0 MIN MAX -160 V -150 V -5 V -0.1 ICBO VCB=-120 V, IE=0 IEBO VEB=-4V , IC=0 hFE1 VCE= -5V, IC= -1mA 80 hFE2 VCE= -5V, IC=-10mA 100 hFE3 VCE= -5V, IC=-50mA 50 -0.1 IC=-50 mA, IB= -5mA -0.5 VBE(sat) IC= -50 mA, IB= -5mA -1 VCE= -5V, IC= -10mA 100 µA µA 300 VCE(sat) fT UNIT V V MHz REV01: 09/2011 Typical Characteristics Static Characteristic -20 -100uA -18 -70uA DC CURRENT GAIN hFE IC COLLECTOR CURRENT (mA) o Ta=100 C 250 -80uA -14 200 -12 -60uA -10 150 -50uA -8 -40uA -6 o Ta=25 C 100 -30uA -4 50 -20uA -2 -0 IB=-10uA -0 -3 0 -9 -6 COLLECTOR-EMITTER VOLTAGE -1 -1 ec -0.4 10 -0.8 -0.6 BASE- EMITTER VOLTAGE fT 300 f=1MHz IE=0 / IC=0 Cib Ta=25℃ -0.2 —— VCB / VEB o o -0.1 -0.0 (mA) Ta=25 C Ta=100 C -1 Cob / Cib 100 -600 -100 IC C -10 -10 COLLECTOR CURRENT CAPACITANCE (pF) IC bl u VCE=-5V -1 (mA) IC —— V BE -100 Ta=25℃ -0.01 -0.1 -600 -100 IC IC Ta=100℃ ou -10 COLLECTOR CURRENT (mA) -0.1 ol -0.2 -0.0 -0.1 r COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) BASE-EMITTER SATURATION VOLTAGE VBEsat (V) Ta=100℃ -0.4 IC β=10 Ta=25℃ -0.6 -600 -100 VCEsat —— -1 β=10 -0.8 -10 COLLECTOR CURRENT (V) VCE —— IC VBEsat -1.0 COLLECTOR CURRENT (mA) IC VCE=-5V COMMON EMITTER Ta=25℃ -90uA -16 hFE — — 300 Cob 1 -0.5 -1.0 -1 -10 REVERSE VOLTAGE VBE(V) —— IC Pc 0.4 —— V (V) Ta 0.3 200 COLLECTOR POWER DISSIPATION Pc (W) TRANSITION FREQUENCY (MHz) fT 250 0.2 150 100 0.1 50 0 VCE=-5V o Ta=25 C -0 -5 -10 -15 COLLECTOR CURRENT Page 2 f 3 -25 -20 IC (mA) -30 0.0 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 150 (℃) REV01: 09/2011 PACKAGE OUTLINE SOT-23 bl u ec ol ou r Plastic surface mounted package; 3 leads Page 3 f 3 REV01: 09/2011