MMBT5551

TRANSISTOR (NPN) MMBT5551 FEATURES Complementary to MMBT5401 SOT-23 Ideal for medium power amplification and switching MARKING: 1．BASE 2．EMITTER 3．COLLECTOR G1 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage IC Collector Current -Continuous 0.6 A PC Collector Power Dissipation 300 mW Tj Junction Temperature 150 ℃ Tstg Storage Temperature r VCBO V ol ou 6 ec -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Symbol bl u Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Test conditions V(BR)CBO IC=100μA, V(BR)CEO* V(BR)EBO IE=0 MIN TYP MAX UNIT 180 V IC= 1mA, IB=0 160 V IE= 10μA, IC=0 6 V Collector cut-off current ICBO VCB= 120V, IE=0 50 nA Emitter cut-off current IEBO VEB= 4V, IC=0 50 nA hFE1* VCE=5V, IC=1mA 80 hFE2* VCE=5V, IC =10mA 100 hFE3* VCE=5V, IC=50mA 50 DC current gain Collector-emitter saturation voltage VCEsat* Base-emitter saturation voltage VBEsat* IC=10mA, IB=1mA 0.15 IC=50mA, IB=5mA 0.2 IC=10mA, IB= 1mA 1 IC=50mA, IB= 5mA 1 Transition frequency fT VCE=10V, IC=10mA, f=100MHz Collector output capacitance Cob Input capacitance Cib Noise figure NF Page 1 f 3 300 V 300 MHz VCB=10V, IE=0, f=1MHz 6 pF VBE=0.5V, IC=0, f=1MHz 20 pF 8 dB VCE=5V, Ic=0.25mA, f=10Hz to 15.7KHz, Rs=1kΩ 100 V REV01: 09/2011 Typical Characteristics IC hFE —— Static Characteristic 18 500 90uA IC COMMON EMITTER VCE=5V COMMON EMITTER Ta=25℃ 80uA 15 Ta=100℃ DC CURRENT GAIN hFE COLLECTOR CURRENT (mA) 70uA 12 60uA 50uA 9 40uA 6 30uA IB=20uA 3 0 Ta=25℃ 100 0 2 4 6 8 COLLECTOR-EMITTER VOLTAGE VCE 10 10 12 (V) 0.6 Ta=100℃ —— IC IC 100 0.4 0.6 fT —— Cob / Cib —— IC (mA) VCB / VEB f=1MHz IE=0 / IC=0 Ta=25℃ C COLLECTOR CURRENT (mA) 10 1 100 CAPACITANCE (pF) 0.8 BASE-EMITTER VOLTAGE 150 200 Ta=25℃ Cib Ta=25℃ 1 0.2 100 Ta=100℃ COLLECTOR CURRENT IC Ta=100℃ 10 0.01 200 (mA) bl u COMMON EMITTER VCE=5V 100 ec 10 COLLECTOR CURRENT 0.1 ol 0.4 VBE 200 β=10 ou Ta=25℃ 200 100 (mA) r COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) BASE-EMITTER SATURATION VOLTAGE VBEsat (V) 0.8 1 IC VCEsat —— IC 0.3 β=10 0.2 0.1 10 COLLECTOR CURRENT VBEsat —— IC 1.0 1 10 Cob 1 0.1 1.0 1 10 REVERSE VOLTAGE VBE(V) IC PC 0.4 —— V 20 (V) Ta fT VCE=10V Ta=25℃ TRANSITION FREQUENCY (MHz) 0.3 COLLECTOR POWER DISSIPATION PC (W) 100 0.2 0.1 50 1 Page 2 f 3 10 3 COLLECTOR CURRENT IC (mA) 20 30 0.0 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 150 (℃ ) REV01: 09/2011 PACKAGE OUTLINE SOT-23 bl u ec ol ou r Plastic surface mounted package; 3 leads Page 3 f 3 REV01: 09/2011