S8050

TRANSISTOR (NPN) S8050 FEATURES Complimentary to S8550 SOT-23 Collector Current: IC=0.5A 1．BASE 2．EMITTER 3．COLLECTOR MARKING: J3Y MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current -Continuous PC Collector Dissipation Tj Junction Temperature Tstg Storage Temperature Units 40 V 25 V 5 V 0.5 A 0.3 W 150 ℃ -55-150 ℃ ou VCEO ol Collector-Base Voltage ec VCBO Value r Parameter Symbol ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Symbol bl u Parameter Test conditions Collector-base breakdown voltage V(BR)CBO IC= 100µA, Collector-emitter breakdown voltage V(BR)CEO IC=1mA, Emitter-base breakdown voltage V(BR)EBO IE=100µA, IE=0 IB=0 IC=0 MIN TYP MAX UNIT 40 V 25 V 5 V Collector cut-off current ICBO VCB=40 V, IE=0 0.1 µA Collector cut-off current ICEO VCB=20V, IE=0 0.1 µA Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 µA HFE(1) VCE=1V, IC= 50mA 200 HFE(2) VCE=1V, IC= 500mA 50 350 DC current gain Collector-emitter saturation voltage VCE(sat) IC=500 mA, IB= 50mA 0.6 V Base-emitter saturation voltage VBE(sat) IC=500 mA, IB= 50mA 1.2 V VCE=6V, Transition frequency Page 1 f 3 fT f=30MHz IC= 20mA 150 MHz REV01: 09/2011 Typical Characteristics IC -90 VCE —— -400uA COMMON EMITTER Ta=25℃ -360uA -240uA -200uA -40 -160uA -30 -120uA -80uA -20 -2 -4 -6 -8 VBEsat —— -10 ou -100 IC -1 -0 -300 β=10 -1 -10 -600 — — COMMON EMITTER VCE=-6V Ta=25℃ -1 -10 -100 COLLECTOR CURRENT PC 400 COLLECTOR POWER DISSIPATION PC (mW) Cib (pF) IC (MHz) 10 -1200 VCB/VEB Cob CAPACITANCE (mA) fT -900 50 10 — — IC 100 BASE-EMMITER VO LTAGE VBE (mV) Cob/Cib -500 -100 fT 400 TRANSITION FREQUENCY -10 COMMON EMITTER VCE=-1V C 0℃ 10 T a= COLLECTOR CURRENT —— VBE Ta=100℃ -100 IC — — ℃ 25 T a= (mA) Ta=25℃ (mA) IC IC -500 bl u -500 -10 ec -1 -500 (mA) -100 ol ℃ COLLECTOR CURRENT —— IC (mA) Ta 300 200 100 f=1MHz IE=0/IC=0 Ta=25 ℃ 1 -0.1 -1 REVERSE VOLTAGE Page 2 f 3 -100 IC -500 β=10 -400 COLLECTOR CURRENT -10 VCEsat IC 100 T a= -1 COLLECTOR CURRENT 25℃ T a= -800 10 -12 VCE (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) -1200 -10 COMMON EMITTER VCE=-1V r -0 COLLECTOR-EMITTER VOLTAGE BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) 100 IB=-40uA -10 -0 Ta=25℃ DC CURRENT GAIN -280uA -50 IC — — Ta=100℃ -320uA hFE (mA) -60 COLLECTOR CURRENT IC -80 -70 hFE 500 -10 V (V) -20 0 0 25 50 75 100 AMBIENT TEMPERATURE Ta 125 150 (℃ ) REV01: 09/2011 PACKAGE OUTLINE SOT-23 bl u ec ol ou r Plastic surface mounted package; 3 leads Page 3 f 3 REV01: 09/2011