S8550

S8550 TRANSISTOR (PNP) FEATURES SOT-23 Complimentary to S8050 Collector current: IC=0.5A 1．BASE 2．EMITTER 3．COLLECTOR MARKING : 2TY MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current -Continuous PC Collector Power Dissipation Tj Junction Temperature Tstg Storage Temperature -40 V -25 V -5 V -0.5 A 0.3 W 150 ℃ -55-150 ℃ ou VCEO ol Collector-Base Voltage Units ec VCBO Value r Parameter Symbol bl u ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT -40 V IC =-1mA, IB=0 -25 V V(BR)EBO IE= -100µA, IC=0 -5 V Collector cut-off current ICBO VCB= -40V, IE=0 -0.1 µA Collector cut-off current ICEO VCE= -20V, IB=0 -0.1 µA Emitter cut-off current IEBO VEB= -3V, IC=0 -0.1 µA Collector-base breakdown voltage V(BR)CBO IC = -100µA, Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage IE=0 hFE(1) VCE= -1V, IC= -50mA 200 hFE(2) VCE= -1V, IC= -500mA 50 Collector-emitter saturation voltage VCE(sat) IC=-500mA, IB= -50mA -0.6 V Base-emitter saturation voltage VBE(sat) IC=-500mA, IB= -50mA -1.2 V 350 DC current gain VCE= -6V, IC= -20mA Transition frequency Page 1 f 3 fT f=30MHz 150 MHz REV01: 09/2011 Typical Characteristics Static Characteristic IC 350uA Ta=100℃ COLLECTOR CURRENT (mA) 300uA 60 250uA 200uA 40 IC — — COMMON EMITTER VCE=1V COMMON EMITTER Ta=25℃ 400uA 80 hFE 1000 DC CURRENT GAIN hFE 100 150uA Ta=25℃ 100 100uA 20 IB=50uA 0 0 4 8 12 16 COLLECTOR-EMITTER VOLTAGE VCEsat — VCE 10 20 3 10 30 VBEsat 1.2 500 100 COLLECTOR CURRENT IC 500 1 (V) IC (mA) IC —— r BASE-EMITTER SATURATION VOLTAGE VBEsat (V) Ta=25℃ β=10 10 3 COLLECTOR CURRENT IC 500 IC bl u Ta=100℃ 3 30 10 100 COLLECTOR CURRENT Cob/ Cib 100 — — IC 500 (mA) VCB/ VEB f=1MHz IE=0/ IC=0 Ta=25℃ Cib 30 Ta=25℃ 10 β=10 3 C IC 30 1 (mA) —— VBE COMMON EMITTER VCE=1V 100 0.0 500 100 30 ec 1 Ta=100℃ 0.4 ol 30 ou Ta=100℃ 10 COLLECTOR CURRENT (mA) Ta=25℃ 0.8 100 CAPACITANCE (pF) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) 300 1 Cob 10 3 0.3 0.1 0.2 0.4 0.6 0.8 1 0.1 1.0 fT 1000 1 0.3 — — IC PC — — 400 V 20 (V) Ta 300 COLLECTOR POWER DISSIPATION PC (mW) TRANSITION FREQUENCY (MHz) fT VCE=6V Ta=25℃ 10 3 REVERSE VOLTAGE BASE-EMMITER VOLTAGE VBE (V) 200 100 100 10 10 COLLECTOR CURRENT Page 2 f 3 100 30 IC (mA) 0 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 150 (℃ ) REV01: 09/2011 PACKAGE OUTLINE SOT-23 bl u ec ol ou r Plastic surface mounted package; 3 leads Page 3 f 3 REV01: 09/2011