SD103AW

SD103AW…SD103CW Surface Mount Schottky Barrier Diodes Features PINNING • Low Forward Voltage PIN DESCRIPTION 1 Cathode 2 Anode INFORMATION 2 1 Type No. Marking SD103AW S4 SD103BW S5 SD103CW S6 Simplified outline SOD-123 and symbol Absolute Maximum Ratings (Ta = 25 C) O Parameter Symbol Peak Repetitive Reverse Voltage r SD103AW SD103BW SD103CW SD103AW SD103BW SD103CW VRRM ou Reverse Voltage Average Forward Rectified Current Value VR Unit 40 30 20 40 30 20 V V 350 mA Non-Repetitive Peak Forward Surge Current at t = 1 s IFSM 2 A Power Dissipation Ptot 400 mW Tj, Tstg - 65 to + 125 ec ol IF(AV) bl u Operating and Storage Temperature Range C O Characteristics at Ta = 25 C O Symbol Min. Typ. Max. 40 30 20 - - - - 5 5 5 VF - - 0.37 0.6 V Total Capacitance at VR = 0 V, f = 1 MHz CT - 50 - pF Reverse Recovery Time at IF = IR = 200 mA, Irr = 0.1 IR, RL = 100 Ω trr - 10 - ns Parameter Reverse Breakdown Voltage at IR = 10 µA Reverse Leakage Current at VR = 30 V at VR = 20 V at VR = 10 V Forward Voltage at IF = 20 mA at IF = 200 mA Page 1 of 3 SD103AW SD103BW SD103CW SD103AW SD103BW SD103CW V (BR)R IR Unit V µA REV01: 09/2011 1 1,000 100 T A = 125°C 0.1 TA = 75° C 10 0.01 r TA = 25°C 1 ou TA = 0°C 0.001 0.1 TA = -40°C 0.0001 0 200 400 600 ol IF, INSTANTANEOUS FORWARD CURRENT (A) TYPICAL CHARACTERISTICS 800 0.01 1,000 30 ec VF, INSTANTANEOUS FORWARD VOLTAGE (mV) Fig. 1 Typical Forward Characteristics 25 50 75 100 0 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Fig. 2 Typical Reverse Characteristics 500 20 15 10 5 0 0 100 25 75 50 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Fig. 3 Total Capacitance vs. Reverse Voltage Page 2 of 3 Note 1 PD, POWER DISSIPATION (mW) 25 bl u CT, TOTAL CAPACITANCE (pF) f = 1.0MHz 400 300 200 100 0 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 4 Power Derating Curve REV01: 09/2011 ACKAGE OUTLINE Plastic surface mounted package; 2 leads bl u ec ol ou r SOD-123 Page 3 of 3 REV01: 09/2011