SD103AWS

SD103AWS...SD103CWS Surface Mount Schottky Barrier Diodes PINNING Features DESCRIPTION PIN • Low Forward Voltage 1 Cathode 2 Anode 2 1 Type No. XX Marking SD103AW S4 SD103BW S5 SD103CW S6 Top View Simplified outline SOD-323 and symbol Absolute Maximum Ratings (Ta = 25 C) O Parameter Symbol Peak Repetitive Reverse Voltage SD103AWS SD103BWS SD103CWS SD103AWS SD103BWS SD103CWS Value r VRRM ou Reverse Voltage Average Forward Rectified Current VR Unit 40 30 20 40 30 20 V V 350 mA Non-Repetitive Peak Forward Surge Current at t = 1 s IFSM 2 A Power Dissipation Ptot 200 mW Tj, Tstg - 65 to + 125 ec ol IF(AV) bl u Operating and Storage Temperature Range C O Characteristics at Ta = 25 C O Symbol Min. Typ. Max. SD103AWS SD103BWS SD103CWS V(BR)R 40 30 20 - - SD103AWS SD103BWS SD103CWS IR - - 5 5 5 VF - - 0.37 0.6 V Total Capacitance at VR = 0 V, f = 1 MHz CT - 50 - pF Reverse Recovery Time at IF = IR = 200 mA, Irr = 0.1 IR, RL = 100 Ω trr - 10 - ns Parameter Reverse Breakdown Voltage at IR = 10 µA Reverse Leakage Current at VR = 30 V at VR = 20 V at VR = 10 V Forward Voltage at IF = 20 mA at IF = 200 mA Page 1 of 3 Unit V µA REV01: 09/2011 1 1,000 100 T A = 125°C 0.1 TA = 75° C 10 TA = 25°C 0.01 1 TA = 0°C 0.001 0.1 r TA = -40°C 0.0001 0 200 400 600 800 0.01 ou IF, INSTANTANEOUS FORWARD CURRENT (A) Typical Characteristics 1,000 VF, INSTANTANEOUS FORWARD VOLTAGE (mV) Fig. 1 Typical Forward Characteristics 30 25 50 75 100 0 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Fig. 2 Typical Reverse Characteristics ol 300 15 10 5 0 0 100 25 75 50 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Fig. 3 Total Capacitance vs. Reverse Voltage Page 2 of 3 PD, POWER DISSIPATION (mW) 20 ec 25 bl u CT, TOTAL CAPACITANCE (pF) f = 1.0MHz Note 1 250 200 150 100 50 0 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 4 Power Derating Curve REV01: 09/2011 PACKAGE OUTLINE Plastic surface mounted package; 2 leads bl u ec ol ou r SOD-323 Page 3 of 3 REV01: 09/2011