SS8050

SS8050 TRANSISTOR (NPN) FEATURES Complimentary to SS8550 SOT-23 1．BASE 2．EMITTER 3．COLLECTOR MARKING: Y1 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Parameter Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current -Continuous PC Collector Power Dissipation Tj Junction Temperature Tstg Storage Temperature Units 40 V 25 V 5 V 1.5 A 0.3 W 150 ℃ -55-150 ℃ r VCBO Value ec ol ou Symbol ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Symbol bl u Parameter Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 100μA, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC= 0.1mA, IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE=100μA, IC=0 5 V Collector cut-off current ICBO VCB=40V, IE=0 0.1 μA Collector cut-off current ICEO VCB=20V, IE=0 0.1 μA Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 μA hFE(1) VCE=1V, IC= 100mA 200 hFE(2) VCE=1V, IC= 800mA 40 350 DC current gain Collector-emitter saturation voltage VCE(sat) IC=800mA, IB= 80mA 0.5 V Base-emitter saturation voltage VBE(sat) IC=800mA, IB= 80mA 1.2 V Transition frequency Page 1 f 3 fT VCE=10V, IC= 50mA f=30MHz 100 MHz REV01: 09/2011 Typical Characteristics Static Characteristic 100 300uA 250uA 60 200uA 40 150uA 300 Ta=25℃ 100 30 100uA 20 IB=50uA 0 0.0 0.5 1.0 1.5 2.0 COLLECTOR-EMITTER VOLTAGE VCEsat 1000 VCE 1 10 3 VBEsat —— 1.2 300 IC 1000 1500 300 (mA) IC r 1.0 ou Ta=100℃ Ta=25℃ 30 100 30 COLLECTOR CURRENT (V) IC —— 100 10 2.5 10 3 Ta=25℃ 0.8 Ta=100℃ 0.6 ol COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) DC CURRENT GAIN 350uA 80 IC Ta=100℃ 400uA BASE-EMITTER SATURATION VOLTAGE VBEsat (V) (mA) IC COLLECTOR CURRENT 450uA —— COMMON EMITTER VCE=1V COMMON EMITTER Ta=25℃ 500uA 120 hFE 1000 hFE 140 0.4 β=10 β=10 10 3 30 100 COLLECTOR CURRENT VBE 300 3 0.6 0.8 BASE-EMMITER VOLTAGE fT (MHz) 100 TRANSITION FREQUENCY 300 fT 1000 —— 1.0 VBE 30 10 COLLECTOR CURRENT IC (mA) f=1MHz IE=0/IC=0 Ta=25℃ (pF) C Cob 10 3 3 1 0.3 PC 350 VCE=10V Ta=25℃ 3 — — VCB/ VEB REVERSE VOLTAGE 10 1 (mA) IC 30 1 0.1 IC 100 1000 1500 300 100 1.2 30 1 Cob/ Cib 200 (V) 3 100 Cib COMMON EMITTER VCE=1V 0.4 30 10 3 COLLECTOR CURRENT — — IC Ta=25℃ 10 1 (mA) CAPACITANCE 30 1 0.2 Page 2 f 3 IC Ta=100℃ 100 0.2 1000 1500 bl u COLLCETOR CURRENT IC (mA) 1500 1000 300 COLLECTOR POWER DISSIPATION PC (mW) 1 ec 1 — — V 10 20 (V) Ta 300 250 200 150 100 50 0 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 150 (℃ ) REV01: 09/2011 PACKAGE OUTLINE SOT-23 bl u ec ol ou r Plastic surface mounted package; 3 leads Page 3 f 3 REV01: 09/2011