SS8550

TRANSISTOR（PNP） SS8550 FEATURES Complimentary to SS8050 SOT-23 1．BASE 2．EMITTER 3．COLLECTOR MARKING: Y2 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current -Continuous PC Collector Power Dissipation Tj Junction Temperature Tstg Storage Temperature Units -40 V -25 V -5 V -1.5 A 0.3 W 150 ℃ -55-150 ℃ ou Collector-Base Voltage ec ol VCBO Value r Parameter Symbol bl u ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-100µA, IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC=-0.1mA, IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO IE=-100µA, IC=0 -5 V Collector cut-off current ICBO VCB=-40V, IE=0 -0.1 µA Collector cut-off current ICEO VCE=-20V, IB=0 -0.1 µA Emitter cut-off current IEBO VEB=-5V, IC=0 -0.1 µA hFE(1) VCE=-1V, IC=-100mA 200 hFE(2) VCE=-1V, IC=-800mA 40 DC current gain 350 Collector-emitter saturation voltage VCE(sat) IC=-800mA, IB=-80mA -0.5 V Base-emitter saturation voltage VBE(sat) IC=-800mA, IB=-80mA -1.2 V Base-emitter on voltage VBE(on) IC=-1V, -1 V VBEF IB=-1A -1.55 V Base-emitter positive favor voltage VCE=-10mA VCE= -10V, IC= -50mA Transition frequency output capacitance Page 1 f 3 fT Cob f=30MHz (VCB=-10V,IE=0,f=1MHz) 100 MHz 20 pF REV01: 09/2011 Typical Characteristics hFE Static Characteristic 500 -180 — — IC 1mA -160 Ta=100℃ -100 0.6mA 0.5mA -80 0.4mA -60 0.3mA -40 0.2mA -20 100 IB=0.1mA -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 COLLECTOR-EMITTER VOLTAGE VBEsat -1000 —— -4.5 -4.0 VCE VCE=-1V 10 -0.1 -5.0 -1 (V) -10 IC VCEsat -1000 IC (mA) IC — r -900 -1000 -100 COLLECTOR CURRENT COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) -0 -0.0 -800 -600 Ta=100℃ -500 -400 -100 ou Ta=25℃ -700 -300 Ta=100℃ Ta=25℃ -10 ol BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) Ta=25℃ hFE 0.7mA DC CURRENT GAIN (mA) -120 COLLECTOR CURRENT 0.8mA IC 0.9mA -140 β=10 -1 -10 -100 COLLECTOR CURRENT VBE —— IC β=10 -1 -10 IC Cob/ Cib 100 -1000 -100 COLLECTOR CURRENT (mA) bl u IC (mA) —— VCB/ VEB f=1MHz IE=0/ IC=0 Cib o Ta=25 C Cob C -100 IC (mA) -1000 -1 0.2 -1000 ec -200 -0.1 CAPACITANCE (pF) -10 Ta=25℃ -1 -0.1 -200 VCE=-1V -300 -400 -500 -600 -700 BASE-EMMITER VOLTAGE fT -900 —— IC Pc fT TRANSITION FREQUENCY Page 2 f 3 -100 -10 COLLECTOR CURRENT —— V 20 (V) Ta 350 VCE-10V o Ta=25 C -1 -10 -1 REVERSE VOLTAGE (mV) 100 10 1 -0.2 -1000 (MHz) 500 VBE -800 IC (mA) COLLECTOR POWER DISSIPATION Pc (mW) COLLCETOR CURRENT o Ta=100 C 300 250 200 150 100 50 0 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 150 (℃) REV01: 09/2011 PACKAGE OUTLINE SOT-23 bl u ec ol ou r Plastic surface mounted package; 3 leads Page 3 f 3 REV01: 09/2011