MMBT8050C(1.5A)

MMBT8050 (1.5A) NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. TO-236 Plastic Package Absolute Maximum Ratings (Ta = 25℃) Parameter Symbol Value Unit Collector Base Voltage VCBO 40 V Collector Emitter Voltage VCEO 25 V Emitter Base Voltage VEBO 6 V Collector Current IC 1.5 A Power Dissipation Ptot 350 mW Tj 150 ℃ Tstg - 55 to + 150 ℃ Junction Temperature Storage Temperature Range Characteristics at Ta = 25℃ Parameter DC Current Gain at VCE = 1 V, IC = 100 mA at VCE = 1 V, IC = 800 mA Collector Base Cutoff Current at VCB = 35 V Emitter Base Cutoff Current at VEB = 6 V Collector Base Breakdown Voltage at IC = 100 µA Collector Emitter Breakdown Voltage at IC = 2 mA Emitter Base Breakdown Voltage at IE = 100 µA Collector Emitter Saturation Voltage at IC = 800 mA, IB = 80 mA Base Emitter Saturation Voltage at IC = 800 mA, IB = 80 mA Base Emitter Voltage at VCE = 1 V, IC = 10 mA Gain Bandwidth Product at VCE = 10 V, IC = 50 mA Symbol Min. Max. Unit hFE hFE hFE 100 160 40 250 400 - - ICBO - 100 nA IEBO - 100 nA V(BR)CBO 40 - V V(BR)CEO 25 - V V(BR)EBO 6 - V VCE(sat) - 0.5 V VBE(sat) - 1.2 V VBE(on) - 1 V fT 120 - MHz MMBT8050C MMBT8050D SEMTECH ELECTRONICS LTD. ® Dated: 16/03/2015 Rev: 02 (A) MMBT8050 (1.5A) SEMTECH ELECTRONICS LTD. ® Dated: 16/03/2015 Rev: 02