0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
PSMN014-40YS,115

PSMN014-40YS,115

  • 厂商:

    NEXPERIA(安世)

  • 封装:

    SOT669

  • 描述:

    MOS管 N-channel Id=46A VDS=40V SOT669

  • 数据手册
  • 价格&库存
PSMN014-40YS,115 数据手册
PSMN014-40YS N-channel LFPAK 40 V, 14 mΩ standard level MOSFET Rev. 03 — 25 October 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits „ Advanced TrenchMOS provides low RDSon and low gate charge „ Improved mechanical and thermal characteristics „ High efficiency gains in switching power converters „ LFPAK provides maximum power density in a Power SO8 package 1.3 Applications „ DC-to-DC convertors „ Motor control „ Lithium-ion battery protection „ Server power supplies „ Load switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS ID drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - - 40 V drain current Tmb = 25 °C; VGS = 10 V; see Figure 1 - - 46 A Ptot total power dissipation Tmb = 25 °C; see Figure 2 - - 56 W Tj junction temperature -55 - 175 °C VGS = 10 V; ID = 5 A; Tj = 100 °C; see Figure 12 - - 20 mΩ VGS = 10 V; ID = 5 A; Tj = 25 °C; see Figure 13 - 11 14 mΩ Static characteristics RDSon drain-source on-state resistance PSMN014-40YS Nexperia N-channel LFPAK 40 V, 14 mΩ standard level MOSFET Table 1. Symbol Quick reference data …continued Parameter Conditions Min Typ Max Unit VGS = 10 V; ID = 25 A; VDS = 20 V; see Figure 14; see Figure 15 - 2.4 - nC - 12 - nC - - 21 mJ Dynamic characteristics QGD gate-drain charge QG(tot) total gate charge Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy VGS = 10 V; Tj(init) = 25 °C; ID = 46 A; Vsup ≤ 40 V; unclamped; RGS = 50 Ω 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 S source 2 S source 3 S source 4 G gate mb D mounting base; connected to drain Graphic symbol mb D G mbb076 S 1 2 3 4 SOT669 (LFPAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description PSMN014-40YS LFPAK plastic single-ended surface-mounted package (LFPAK); 4 leads SOT669 PSMN014-40YS Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 03 — 25 October 2010 Version © Nexperia B.V. 2017. All rights reserved 2 of 15 PSMN014-40YS Nexperia N-channel LFPAK 40 V, 14 mΩ standard level MOSFET 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - 40 V VDGR drain-gate voltage Tj ≥ 25 °C; Tj ≤ 175 °C; RGS = 20 kΩ - 40 V VGS gate-source voltage ID drain current -20 20 V VGS = 10 V; Tmb = 100 °C; see Figure 1 - 32 A VGS = 10 V; Tmb = 25 °C; see Figure 1 - 46 A - 183 A IDM peak drain current pulsed; tp ≤ 10 µs; Tmb = 25 °C; see Figure 3 Ptot total power dissipation Tmb = 25 °C; see Figure 2 - 56 W Tstg storage temperature -55 175 °C Tj junction temperature -55 175 °C Tsld(M) peak soldering temperature - 260 °C Source-drain diode IS source current Tmb = 25 °C - 46 A ISM peak source current pulsed; tp ≤ 10 µs; Tmb = 25 °C - 183 A VGS = 10 V; Tj(init) = 25 °C; ID = 46 A; Vsup ≤ 40 V; unclamped; RGS = 50 Ω - 21 mJ Avalanche ruggedness non-repetitive drain-source avalanche energy EDS(AL)S 003aad331 50 ID (A) 03aa16 120 Pder (%) 40 80 30 20 40 10 0 0 0 Fig 1. 50 100 150 Tmb (°C) 200 Continuous drain current as a function of mounting base temperature PSMN014-40YS Product data sheet 0 50 100 150 200 Tmb (°C) Fig 2. Normalized total power dissipation as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. Rev. 03 — 25 October 2010 © Nexperia B.V. 2017. All rights reserved 3 of 15 PSMN014-40YS Nexperia N-channel LFPAK 40 V, 14 mΩ standard level MOSFET 003aad332 103 ID (A) Limit RDSon = VDS / ID 102 10 μs 100 μs 10 DC 1 ms 1 10 ms 100 ms 10-1 10-1 Fig 3. 1 10 102 VDS (V) Safe operating area; continuous and peak drain currents as a function of drain-source voltage PSMN014-40YS Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 03 — 25 October 2010 © Nexperia B.V. 2017. All rights reserved 4 of 15 PSMN014-40YS Nexperia N-channel LFPAK 40 V, 14 mΩ standard level MOSFET 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance from junction to mounting base see Figure 4 - 1.4 2.7 K/W 003a a d340 10 Zth (j-mb) (K/W) δ = 0.5 1 0.2 0.1 0.05 10−1 δ= P 0.02 single shot tp T t tp T 10−2 1−6 Fig 4. 10−5 10−4 10−3 10−2 10−1 tp (s) 1 Transient thermal impedance from junction to mounting base as a function of pulse duration; typical values PSMN014-40YS Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 03 — 25 October 2010 © Nexperia B.V. 2017. All rights reserved 5 of 15 PSMN014-40YS Nexperia N-channel LFPAK 40 V, 14 mΩ standard level MOSFET 6. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = -55 °C 36 - - V ID = 250 µA; VGS = 0 V; Tj = 25 °C 40 - - V VGS(th) gate-source threshold voltage ID = 1 mA; VDS = VGS; Tj = -55 °C; see Figure 10 - - 4.6 V ID = 1 mA; VDS = VGS; Tj = 175 °C; see Figure 10 1 - - V ID = 1 mA; VDS = VGS; Tj = 25 °C; see Figure 11; see Figure 10 2 3 4 V µA IDSS drain leakage current VDS = 40 V; VGS = 0 V; Tj = 25 °C - 0.02 1 VDS = 40 V; VGS = 0 V; Tj = 125 °C - - 50 µA IGSS gate leakage current VGS = 20 V; VDS = 0 V; Tj = 25 °C - - 100 nA VGS = -20 V; VDS = 0 V; Tj = 25 °C - - 100 nA VGS = 10 V; ID = 5 A; Tj = 100 °C; see Figure 12 - - 20 mΩ VGS = 10 V; ID = 5 A; Tj = 175 °C; see Figure 12 - 20 27 mΩ VGS = 10 V; ID = 5 A; Tj = 25 °C; see Figure 13 - 11 14 mΩ f = 1 MHz - 0.6 - Ω RDSon RG drain-source on-state resistance internal gate resistance (AC) Dynamic characteristics QG(tot) total gate charge ID = 0 A; VDS = 0 V; VGS = 10 V - 10 - nC 12 - nC gate-source charge ID = 25 A; VDS = 20 V; VGS = 10 V; see Figure 14; see Figure 15 - QGS - 5.4 - nC QGS(th) pre-threshold gate-source charge ID = 25 A; VDS = 20 V; VGS = 10 V; see Figure 14 - 2.2 - nC QGS(th-pl) post-threshold gate-source charge - 3.2 - nC QGD gate-drain charge ID = 25 A; VDS = 20 V; VGS = 10 V; see Figure 14; see Figure 15 - 2.4 - nC VGS(pl) gate-source plateau voltage ID = 25 A; VDS = 20 V; see Figure 14; see Figure 15 - 6 - V Ciss input capacitance - 702 - pF Coss output capacitance VDS = 20 V; VGS = 0 V; f = 1 MHz; Tj = 25 °C; see Figure 16 - 171 - pF Crss reverse transfer capacitance - 97 - pF td(on) turn-on delay time - 12 - ns tr rise time - 6 - ns td(off) turn-off delay time - 19 - ns tf fall time - 5 - ns PSMN014-40YS Product data sheet VDS = 12 V; RL = 0.8 Ω; VGS = 10 V; RG(ext) = 4.7 Ω All information provided in this document is subject to legal disclaimers. Rev. 03 — 25 October 2010 © Nexperia B.V. 2017. All rights reserved 6 of 15 PSMN014-40YS Nexperia N-channel LFPAK 40 V, 14 mΩ standard level MOSFET Table 6. Characteristics …continued Symbol Parameter Conditions Min Typ Max Unit - 0.8 1.2 V Source-drain diode VSD source-drain voltage IS = 5 A; VGS = 0 V; Tj = 25 °C; see Figure 17 trr reverse recovery time Qr recovered charge IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V; VDS = 40 V 003aad309 20 gfs (S) - 22 - ns - 17 - nC 003aad304 60 ID (A) 50 15 40 10 30 20 5 Tj = 175 °C 10 0 0 0 Fig 5. Tj = 25 °C 5 10 15 20 ID (A) 0 25 Forward transconductance as a function of drain current; typical values Fig 6. 003aad308 1200 C (pF) 2 4 6 VGS (V) 8 Transfer characteristics: drain current as a function of gate-source voltage; typical values 003aad310 40 RDSon (mΩ) 1000 30 Ciss 800 20 Crss 600 10 400 0 0 Fig 7. 5 10 15 20 25 VGS (V) Input and reverse transfer capacitances as a function of gate-source voltage; typical values PSMN014-40YS Product data sheet 5 Fig 8. 10 15 VGS (V) 20 Drain-source on-state resistance as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 03 — 25 October 2010 © Nexperia B.V. 2017. All rights reserved 7 of 15 PSMN014-40YS Nexperia N-channel LFPAK 40 V, 14 mΩ standard level MOSFET 003aad302 100 ID (A) 20 15 10 003aad280 5 VGS(th) (V) 4 80 max VGS (V) = 8 60 3 typ 7 6.5 40 2 min 6 5.5 20 1 5 4.5 0 0 Fig 9. 3 6 VDS (V) 9 Output characteristics: drain current as a function of drain-source voltage; typical values 0 −60 ID (A) 60 120 180 Tj (°C) Fig 10. Gate-source threshold voltage as a function of junction temperature 03aa35 10−1 0 03ne89 2 a min 10−2 typ max 1.5 10−3 1 10−4 0.5 10−5 10−6 0 2 4 6 0 -60 0 60 120 VGS (V) Fig 11. Sub-threshold drain current as a function of gate-source voltage PSMN014-40YS Product data sheet Tj (°C) 180 Fig 12. Normalized drain-source on-state resistance factor as a function of junction temperature All information provided in this document is subject to legal disclaimers. Rev. 03 — 25 October 2010 © Nexperia B.V. 2017. All rights reserved 8 of 15 PSMN014-40YS Nexperia N-channel LFPAK 40 V, 14 mΩ standard level MOSFET 003aad303 30 6.5 RDSon (mΩ) 25 7 VDS 8 ID 10 VGS(pl) 20 VGS(th) VGS 15 15 QGS1 QGS2 QGS 10 VGS (V) = 20 QGD QG(tot) 003aaa508 5 0 20 40 60 80 ID (A) 100 Fig 13. Drain-source on-state resistance as a function of drain current; typical values 003aad306 10 VGS (V) Fig 14. Gate charge waveform definitions 003aad307 103 32V Ciss C (pF) 8 8V VDS = 20V 6 Coss 2 10 Crss 4 2 0 0 3 6 9 12 15 QG (nC) Fig 15. Gate-source voltage as a function of gate charge; typical values PSMN014-40YS Product data sheet 10 10-1 1 10 VDS (V) 102 Fig 16. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 03 — 25 October 2010 © Nexperia B.V. 2017. All rights reserved 9 of 15 PSMN014-40YS Nexperia N-channel LFPAK 40 V, 14 mΩ standard level MOSFET 003aad305 100 IS (A) 80 60 40 Tj = 175 °C 20 Tj = 25 °C 0 0 0.3 0.6 0.9 VSD (V) 1.2 Fig 17. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values PSMN014-40YS Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 03 — 25 October 2010 © Nexperia B.V. 2017. All rights reserved 10 of 15 PSMN014-40YS Nexperia N-channel LFPAK 40 V, 14 mΩ standard level MOSFET 7. Package outline Plastic single-ended surface-mounted package (LFPAK); 4 leads A2 A E SOT669 C c2 b2 E1 b3 L1 mounting base b4 D1 D H L2 1 2 3 e 4 w M A b 1/2 X c e A (A 3) A1 C θ L detail X y C 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT mm A A1 A2 A3 b b2 1.20 0.15 1.10 0.50 4.41 0.25 1.01 0.00 0.95 0.35 3.62 b3 b4 2.2 2.0 0.9 0.7 c D (1) c2 D1(1) E(1) E1(1) max 0.25 0.30 4.10 4.20 0.19 0.24 3.80 5.0 4.8 3.3 3.1 e H L L1 L2 w y θ 1.27 6.2 5.8 0.85 0.40 1.3 0.8 1.3 0.8 0.25 0.1 8° 0° Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. OUTLINE VERSION SOT669 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 04-10-13 06-03-16 MO-235 Fig 18. Package outline SOT669 (LFPAK) PSMN014-40YS Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 03 — 25 October 2010 © Nexperia B.V. 2017. All rights reserved 11 of 15 PSMN014-40YS Nexperia N-channel LFPAK 40 V, 14 mΩ standard level MOSFET 8. Revision history Table 7. Revision history Document ID Release date Data sheet status Change notice Supersedes PSMN014-40YS v.3 20101025 Product data sheet - PSMN014-40YS v.2 - PSMN014-40YS v.1 Modifications: PSMN014-40YS v.2 PSMN014-40YS Product data sheet • • Status changed from objective to product. Various changes to content. 20100526 Objective data sheet All information provided in this document is subject to legal disclaimers. Rev. 03 — 25 October 2010 © Nexperia B.V. 2017. All rights reserved 12 of 15 PSMN014-40YS Nexperia N-channel LFPAK 40 V, 14 mΩ standard level MOSFET 9. Legal information 9.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nexperia.com. 9.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. Nexperia does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local Nexperia sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between Nexperia and its customer, unless Nexperia and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the Nexperia product is deemed to offer functions and qualities beyond those described in the Product data sheet. 9.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, Nexperia does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall Nexperia be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Suitability for use — Nexperia products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of a Nexperia product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Nexperia accepts no liability for inclusion and/or use of Nexperia products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. Nexperia makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using Nexperia products, and Nexperia accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the Nexperia product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. Nexperia does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using Nexperia products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). Nexperia does not accept any liability in this respect. Notwithstanding any damages that customer might incur for any reason whatsoever, Nexperia’s aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of Nexperia. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Right to make changes — Nexperia reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Terms and conditions of commercial sale — Nexperia products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nexperia.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective PSMN014-40YS Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 03 — 25 October 2010 © Nexperia B.V. 2017. All rights reserved 13 of 15 PSMN014-40YS Nexperia N-channel LFPAK 40 V, 14 mΩ standard level MOSFET agreement shall apply. Nexperia hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of Nexperia products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond Nexperia’s specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies Nexperia for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond Nexperia’s standard warranty and Nexperia’s product specifications. 9.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Non-automotive qualified products — Unless this data sheet expressly states that this specific Nexperia product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. Nexperia accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without Nexperia’s warranty of the 10. Contact information For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com PSMN014-40YS Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 03 — 25 October 2010 © Nexperia B.V. 2017. All rights reserved 14 of 15 Nexperia PSMN014-40YS N-channel LFPAK 40 V, 14 mΩ standard level MOSFET 11. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 9.2 9.3 9.4 10 © Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3 Thermal characteristics . . . . . . . . . . . . . . . . . . .5 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . .12 Legal information. . . . . . . . . . . . . . . . . . . . . . . .13 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Contact information. . . . . . . . . . . . . . . . . . . . . .14 Nexperia B.V. 2017. All rights reserved For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 25 October 2010
PSMN014-40YS,115 价格&库存

很抱歉,暂时无法提供与“PSMN014-40YS,115”相匹配的价格&库存,您可以联系我们找货

免费人工找货
PSMN014-40YS,115
  •  国内价格 香港价格
  • 1+5.362381+0.64683
  • 10+4.6581110+0.56188
  • 100+3.22220100+0.38868
  • 500+2.69221500+0.32475

库存:31225

PSMN014-40YS,115

    库存:72