PSMN059-150Y
N-channel TrenchMOS SiliconMAX standard level FET
3 October 2013
Product data sheet
1. General description
SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in
a plastic package using TrenchMOS technology. This product is designed and qualified
for use in computing, communications, consumer and industrial applications only.
2. Features and benefits
•
•
Higher operating power due to low thermal resistance
Suitable for high frequency applications due to fast switching characteristics
3. Applications
•
•
•
•
Class D amplifier
DC-to-DC converters
Motion control
Switched-mode power supplies
4. Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDS
drain-source voltage
Tj ≥ 25 °C; Tj ≤ 150 °C
-
-
150
V
ID
drain current
Tmb = 25 °C; VGS = 10 V; Fig. 1; Fig. 3
-
-
43
A
Ptot
total power dissipation
Tmb = 25 °C; Fig. 2
-
-
113
W
VGS = 10 V; ID = 12 A; Tj = 25 °C;
-
46
59
mΩ
-
9.1
-
nC
Static characteristics
RDSon
drain-source on-state
resistance
Fig. 9; Fig. 10
Dynamic characteristics
QGD
gate-drain charge
VGS = 10 V; ID = 12 A; VDS = 75 V;
Fig. 11; Fig. 12
PSMN059-150Y
Nexperia
N-channel TrenchMOS SiliconMAX standard level FET
5. Pinning information
Table 2.
Pinning information
Pin
Symbol Description
Simplified outline
1
S
source
2
S
source
3
S
source
4
G
gate
mb
D
mounting base; connected to
drain
Graphic symbol
D
mb
G
mbb076
S
1 2 3 4
LFPAK56; PowerSO8 (SOT669)
6. Ordering information
Table 3.
Ordering information
Type number
Package
PSMN059-150Y
Name
Description
Version
LFPAK56;
Power-SO8
Plastic single-ended surface-mounted package (LFPAK56;
Power-SO8); 4 leads
SOT669
7. Marking
Table 4.
Marking codes
Type number
Marking code
PSMN059-150Y
059150
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
Tj ≥ 25 °C; Tj ≤ 150 °C
-
150
V
VDGR
drain-gate voltage
Tj ≥ 25 °C; Tj ≤ 150 °C; RGS = 20 Ω
-
150
V
VGS
gate-source voltage
-20
20
V
ID
drain current
VGS = 10 V; Tmb = 25 °C; Fig. 1; Fig. 3
-
43
A
VGS = 10 V; Tmb = 100 °C; Fig. 1
-
27.7
A
IDM
peak drain current
pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 3
-
129
A
Ptot
total power dissipation
Tmb = 25 °C; Fig. 2
-
113
W
Tstg
storage temperature
-55
150
°C
PSMN059-150Y
Product data sheet
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PSMN059-150Y
Nexperia
N-channel TrenchMOS SiliconMAX standard level FET
Symbol
Parameter
Conditions
Tj
junction temperature
Min
Max
Unit
-55
150
°C
Source-drain diode
IS
source current
Tmb = 25 °C
-
52
A
ISM
peak source current
pulsed; tp ≤ 10 µs; Tmb = 25 °C
-
208
A
VGS = 10 V; Tj(init) = 25 °C; ID = 12.1 A;
-
255
mJ
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source
avalanche energy
Vsup ≤ 150 V; unclamped; tp = 0.21 ms;
RGS = 50 Ω
003aac023
120
Ider
(%)
003aab937
120
Pder
(%)
80
80
40
40
0
Fig. 1.
0
50
100
150
Tmb (°C)
Normalized continuous drain current as a
function of mounting base temperature
PSMN059-150Y
Product data sheet
0
200
Fig. 2.
0
100
150
Tmb (°C)
200
Normalized total power dissipation as a
function of solder point temperature
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PSMN059-150Y
Nexperia
N-channel TrenchMOS SiliconMAX standard level FET
003aab749
103
ID
(A)
Limit RDSon = VDS / ID
102
tp = 10 µs
10
100 µs
1 ms
DC
10 ms
100 ms
1
10- 1
Fig. 3.
1
102
10
103
VDS (V)
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
9. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-mb)
thermal resistance
from junction to
mounting base
mounted on a printed-circuit board;
vertical in still air; Fig. 4
-
-
1.1
K/W
003aac268
10
Zth(j-mb)
(K/W)
1
d = 0.5
0.2
10- 1
0.1
0.05
0.02
10- 2
P
δ=
single shot
tp
10- 3
10- 6
Fig. 4.
tp
T
10- 5
10- 4
10- 3
10- 2
10- 1
t
T
tp (s)
1
Transient thermal impedance from junction to mounting base as a function of pulse duration
PSMN059-150Y
Product data sheet
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PSMN059-150Y
Nexperia
N-channel TrenchMOS SiliconMAX standard level FET
10. Characteristics
Table 7.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
150
-
-
V
ID = 250 µA; VGS = 0 V; Tj = -55 °C
133
-
-
V
gate-source threshold
voltage
ID = 1 mA; VDS = VGS; Tj = 25 °C;
2
3
4
V
1
-
-
V
-
-
4.4
V
VDS = 120 V; VGS = 0 V; Tj = 25 °C
-
-
1
µA
VDS = 120 V; VGS = 0 V; Tj = 150 °C
-
-
100
µA
VGS = 20 V; VDS = 0 V; Tj = 25 °C
-
-
100
nA
VGS = -20 V; VDS = 0 V; Tj = 25 °C
-
-
100
nA
VGS = 10 V; ID = 12 A; Tj = 25 °C;
-
46
59
mΩ
-
101
135
mΩ
f = 1 MHz
-
1.1
-
Ω
Static characteristics
V(BR)DSS
VGS(th)
Fig. 7; Fig. 8
ID = 1 mA; VDS = VGS; Tj = 150 °C;
Fig. 7; Fig. 8
ID = 1 mA; VDS = VGS; Tj = -55 °C;
Fig. 7; Fig. 8
IDSS
IGSS
RDSon
drain leakage current
gate leakage current
drain-source on-state
resistance
Fig. 9; Fig. 10
VGS = 10 V; ID = 12 A; Tj = 150 °C;
Fig. 9; Fig. 10
RG
gate resistance
Dynamic characteristics
QG(tot)
total gate charge
ID = 12 A; VDS = 75 V; VGS = 10 V;
-
27.9
-
nC
QGS
gate-source charge
Fig. 11; Fig. 12
-
6.3
-
nC
QGD
gate-drain charge
-
9.1
-
nC
VGS(pl)
gate-source plateau
voltage
ID = 12 A; VDS = 75 V; Fig. 11; Fig. 12
-
4.8
-
V
Ciss
input capacitance
VDS = 30 V; VGS = 0 V; f = 1 MHz;
-
1529
-
pF
Coss
output capacitance
Tj = 25 °C; Fig. 13
-
208
-
pF
Crss
reverse transfer
capacitance
-
66
-
pF
td(on)
turn-on delay time
VDS = 75 V; RL = 3 Ω; VGS = 10 V;
-
14.2
-
ns
tr
rise time
RG(ext) = 5.6 Ω
-
42
-
ns
td(off)
turn-off delay time
-
54.2
-
ns
tf
fall time
-
11.1
-
ns
-
0.9
1.2
V
Source-drain diode
VSD
source-drain voltage
PSMN059-150Y
Product data sheet
IS = 12 A; VGS = 0 V; Tj = 25 °C; Fig. 14
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PSMN059-150Y
Nexperia
N-channel TrenchMOS SiliconMAX standard level FET
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
trr
reverse recovery time
IS = 12 A; dIS/dt = -100 A/µs; VGS = 0 V;
-
67
-
ns
-
226
-
nC
VDS = 30 V
Qr
recovered charge
IS = 12 A; dIS/dt = -100 A/µs; VGS = 0 V
003aab751
50
10
ID
(A)
7
003aab753
60
6
VDS > ID × RDSon
ID
(A)
40
45
VGS (V) = 5.5
30
30
20
Tj = 150 °C
5
25 °C
15
10
4.5
0
Fig. 5.
0
1
2
3
4
VDS (V)
0
5
2
4
6
VGS (V)
8
Tj = 25 °C
Tj = 25 °C and 150 °C; VDS > ID x RDSon
Fig. 6.
Output characteristics: drain current as a
function of drain-source voltage; typical values
Transfer characteristics: drain current as a
function of gate-source voltage; typical values
003aab852
5
003aab853
10- 1
ID
(A)
VGS(th)
(V)
4
10- 5
0
60
120
Tj (°C)
10- 6
160
Gate-source threshold voltage as a function of
junction temperature
PSMN059-150Y
Product data sheet
max
10- 4
min
1
0
- 60
typ
10- 3
typ
2
min
10- 2
max
3
Fig. 7.
0
Fig. 8.
0
4
VGS (V)
6
Sub-threshold drain current as a function of
gate-source voltage
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PSMN059-150Y
Nexperia
N-channel TrenchMOS SiliconMAX standard level FET
03al51
3
003aab752
150
4.5
RDSon
(mΩ)
a
5
5.5
120
VGS (V) = 6
2
90
7
10
60
1
30
0
- 75
Fig. 9.
- 25
25
75
125
Tj (°C)
0
175
Normalized drain-source on-state resistance
factor as a function of junction temperature
0
10
20
30
40
50
Fig. 10. Drain-source on-state resistance as a function
of drain current; typical values
003aab754
10
VDS
ID (A)
ID = 12 A
Tj = 25 °C
VGS
(V)
ID
8
30
75
VGS(pl)
6
VGS(th)
VDS = 120 V
VGS
4
QGS1
QGS2
QGS
QGD
QG(tot)
2
003aaa508
0
Fig. 11. Gate charge waveform definitions
0
7.5
15
22.5
QG (nC)
30
Fig. 12. Gate-source voltage as a function of gate
charge; typical values
PSMN059-150Y
Product data sheet
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PSMN059-150Y
Nexperia
N-channel TrenchMOS SiliconMAX standard level FET
003aab755
104
IS
(X)
C
(pF)
60
Ciss
103
40
Coss
102
10
10- 1
003aab756
80
Crss
1
10
VDS (V)
Tj = 25 °C
150 °C
20
0
102
0
0.3
0.6
0.9
VSD (V)
1.2
Fig. 13. Input, output and reverse transfer capacitances Fig. 14. Source current as a function of source-drain
as a function of drain-source voltage; typical
voltage; typical values
values
PSMN059-150Y
Product data sheet
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PSMN059-150Y
Nexperia
N-channel TrenchMOS SiliconMAX standard level FET
11. Package outline
Plastic single-ended surface-mounted package (LFPAK56; Power-SO8); 4 leads
E
A2
A
SOT669
C
c2
b2
E1
b3
L1
mounting
base
b4
D1
D
H
L2
1
2
3
e
4
w
b
A
X
c
1/2 e
A
(A3)
A1
C
q
L
detail X
0
y C
θ
5 mm
8°
scale
0°
Dimensions (mm are the original dimensions)
Unit(1)
A
A1
A2
A3
b
b2
max 1.20 0.15 1.10
0.50 4.41
nom
0.25
min 1.01 0.00 0.95
0.35 3.62
mm
c
c2
D(1) D1(1) E(1) E1(1)
b3
b4
2.2
0.9
0.25 0.30 4.10 4.20
5.0
3.3
2.0
0.7
0.19 0.24 3.80
4.8
3.1
e
1.27
H
L
L1
L2
6.2
0.85
1.3
1.3
5.8
0.40
0.8
0.8
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
Outline
version
SOT669
References
IEC
JEDEC
JEITA
w
y
0.25
0.1
sot669_po
European
projection
Issue date
11-03-25
13-02-27
MO-235
Fig. 15. Package outline LFPAK56; Power-SO8 (SOT669)
PSMN059-150Y
Product data sheet
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PSMN059-150Y
Nexperia
N-channel TrenchMOS SiliconMAX standard level FET
In no event shall Nexperia be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
12. Legal information
12.1 Data sheet status
Notwithstanding any damages that customer might incur for any reason
whatsoever, Nexperia’s aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of Nexperia.
Document
status [1][2]
Product
status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification
This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1]
[2]
[3]
Definition
Right to make changes — Nexperia reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Please consult the most recently issued document before initiating or
completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the Internet at URL http://www.nexperia.com.
12.2 Definitions
Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
Nexperia does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Nexperia does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences
of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the
relevant full data sheet, which is available on request via the local Nexperia
sales office. In case of any inconsistency or conflict with the
short data sheet, the full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
Nexperia and its customer, unless Nexperia and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the Nexperia product
is deemed to offer functions and qualities beyond those described in the
Product data sheet.
12.3 Disclaimers
Limited warranty and liability — Information in this document is believed
to be accurate and reliable. However, Nexperia does not give
any representations or warranties, expressed or implied, as to the accuracy
or completeness of such information and shall have no liability for the
consequences of use of such information. Nexperia takes no
responsibility for the content in this document if provided by an information
source outside of Nexperia.
PSMN059-150Y
Product data sheet
Suitability for use — Nexperia products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of a Nexperia product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. Nexperia and its suppliers accept no liability for
inclusion and/or use of Nexperia products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their
applications and products using Nexperia products, and Nexperia
accepts no liability for any assistance with applications or
customer product design. It is customer’s sole responsibility to determine
whether the Nexperia product is suitable and fit for the
customer’s applications and products planned, as well as for the planned
application and use of customer’s third party customer(s). Customers should
provide appropriate design and operating safeguards to minimize the risks
associated with their applications and products.
Nexperia does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default
in the customer’s applications or products, or the application or use by
customer’s third party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applications and products using Nexperia
products in order to avoid a default of the applications
and the products or of the application or use by customer’s third party
customer(s). Nexperia does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — Nexperia
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nexperia.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. Nexperia hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of Nexperia products by customer.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
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PSMN059-150Y
Nexperia
N-channel TrenchMOS SiliconMAX standard level FET
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific Nexperia product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor
tested in accordance with automotive testing or application requirements.
Nexperia accepts no liability for inclusion and/or use of nonautomotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards,
customer (a) shall use the product without Nexperia’s warranty
of the product for such automotive applications, use and specifications, and
(b) whenever customer uses the product for automotive applications beyond
Nexperia’s specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies Nexperia for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond Nexperia’s
standard warranty and Nexperia’s product specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
12.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
PSMN059-150Y
Product data sheet
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PSMN059-150Y
Nexperia
N-channel TrenchMOS SiliconMAX standard level FET
13. Contents
1
General description ............................................... 1
2
Features and benefits ............................................1
3
Applications ........................................................... 1
4
Quick reference data ............................................. 1
5
Pinning information ............................................... 2
6
Ordering information ............................................. 2
7
Marking ................................................................... 2
8
Limiting values .......................................................2
9
Thermal characteristics .........................................4
10
Characteristics ....................................................... 5
11
Package outline ..................................................... 9
12
12.1
12.2
12.3
12.4
Legal information .................................................10
Data sheet status ............................................... 10
Definitions ...........................................................10
Disclaimers .........................................................10
Trademarks ........................................................ 11
©
Nexperia B.V. 2017. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 03 October 2013
PSMN059-150Y
Product data sheet
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