PSMN1R0-40YLD
N-channel 40 V, 1.1 mΩ, 280 A logic level MOSFET in
LFPAK56 using NextPower-S3 Schottky-Plus technology
30 November 2017
Product data sheet
1. General description
280 Amp, logic level gate drive N-channel enhancement mode MOSFET in 150 °C LFPAK56
package using advanced TrenchMOS Superjunction technology. This product has been designed
and qualified for high performance power switching applications.
2. Features and benefits
•
•
•
•
•
•
•
•
•
280 A capability
Avalanche rated, 100% tested at IAS = 190 A
NextPower-S3 technology delivers 'superfast switching with soft recovery'
Low QRR, QG and QGD for high system efficiency and low EMI designs
Schottky-Plus body-diode, gives soft switching without the associated high IDSS leakage
Optimised for 4.5 V gate drive utilising NextPower-S3 Superjunction technology
High reliability LFPAK (Power SO8) package, copper-clip, solder die attach and
qualified to 150 °C
Exposed leads can be wave soldered, visual solder joint inspection and high quality solder
joints
Low parasitic inductance and resistance
3. Applications
•
•
•
•
•
Synchronous rectification
DC-to-DC converters
High performance & high efficiency server power supply
Motor control
Power ORing
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDS
drain-source voltage
25 °C ≤ Tj ≤ 150 °C
-
-
40
V
ID
drain current
VGS = 10 V; Tmb = 25 °C; Fig. 2
-
-
280
A
Ptot
total power dissipation
Tmb = 25 °C; Fig. 1
-
-
198
W
Tj
junction temperature
-55
-
150
°C
VGS = 4.5 V; ID = 25 A; Tj = 25 °C;
Fig. 10; Fig. 11
-
1.1
1.4
mΩ
VGS = 10 V; ID = 25 A; Tj = 25 °C;
Fig. 10; Fig. 11
-
0.93
1.1
mΩ
[1]
Static characteristics
RDSon
drain-source on-state
resistance
PSMN1R0-40YLD
Nexperia
N-channel 40 V, 1.1 mΩ, 280 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus
technology
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
ID = 25 A; VDS = 20 V; VGS = 4.5 V;
Fig. 12; Fig. 13
-
17
-
nC
-
59
-
nC
Dynamic characteristics
QGD
gate-drain charge
QG(tot)
total gate charge
[1]
280A continuous current has been successfully demonstrated during application tests. Practically, the current will be limited by PCB,
thermal design and operation temperature.
5. Pinning information
Table 2. Pinning information
Pin
Symbol Description
Simplified outline
1
S
source
2
S
source
3
S
source
4
G
gate
mb
D
mounting base; connected to
drain
Graphic symbol
D
G
mbb076
1
2
3
S
4
LFPAK56; PowerSO8 (SOT1023)
6. Ordering information
Table 3. Ordering information
Type number
PSMN1R0-40YLD
Package
Name
Description
Version
LFPAK56;
Power-SO8
Plastic single-ended surface-mounted package (LFPAK56); 4
leads
SOT1023
7. Marking
Table 4. Marking codes
Type number
Marking code
PSMN1R0-40YLD
1D040L
PSMN1R0-40YLD
Product data sheet
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PSMN1R0-40YLD
Nexperia
N-channel 40 V, 1.1 mΩ, 280 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus
technology
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
25 °C ≤ Tj ≤ 150 °C
-
40
V
VDSM
peak drain-source
voltage
tp ≤ 20 ns; f ≤ 500 kHz; EDS(AL) ≤ 200 nJ;
pulsed
-
45
V
VDGR
drain-gate voltage
25 °C ≤ Tj ≤ 150 °C; RGS = 20 kΩ
-
40
V
VGS
gate-source voltage
-20
20
V
Ptot
total power dissipation
Tmb = 25 °C; Fig. 1
-
198
W
ID
drain current
VGS = 10 V; Tmb = 25 °C; Fig. 2
-
280
A
VGS = 10 V; Tmb = 100 °C; Fig. 2
-
198
A
pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 3
-
1284
A
[1]
IDM
peak drain current
Tstg
storage temperature
-55
150
°C
Tj
junction temperature
-55
150
°C
Tsld(M)
peak soldering
temperature
-
260
°C
VESD
electrostatic discharge
voltage
HBM
2
-
kV
Source-drain diode
IS
source current
Tmb = 25 °C
-
165
A
ISM
peak source current
pulsed; tp ≤ 10 µs; Tmb = 25 °C
-
1284
A
Avalanche ruggedness
EDS(AL)S
IAS
[1]
[2]
non-repetitive drainsource avalanche
energy
ID = 85 A; Vsup ≤ 40 V; RGS = 50 Ω;
VGS = 10 V; Tj(init) = 25 °C; unclamped;
tp = 0.26 ms
[2]
-
578
mJ
ID = 25 A; Vsup ≤ 40 V; RGS = 50 Ω;
VGS = 10 V; Tj(init) = 25 °C; unclamped;
tp = 3.8 ms
[2]
-
2472
mJ
[2]
-
190
A
non-repetitive avalanche Vsup ≤ 40 V; VGS = 10 V; Tj(init) = 25 °C;
current
RGS = 50 Ω
280A continuous current has been successfully demonstrated during application tests. Practically, the current will be limited by PCB,
thermal design and operation temperature.
Protected by 100% test
PSMN1R0-40YLD
Product data sheet
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PSMN1R0-40YLD
Nexperia
N-channel 40 V, 1.1 mΩ, 280 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus
technology
03ne36
120
Pder
(%)
aaa-008711
400
ID
(A)
300
80
(1)
200
40
100
0
Fig. 1.
0
50
100
150
Tmb (°C)
0
200
50
100
150
Tmb (°C)
200
(1) 280A continuous current has been successfully
demonstrated during applications tests. Practically,
the current will be limited by PCB, thermal design
and operating temperature.
Normalized total power dissipation as a
function of mounting base temperature
Fig. 2.
ID
(A)
0
Continuous drain current as a function of
mounting base temperature
aaa-012570
104
Limit RDSon = VDS / ID
103
tp = 10 µs
102
100 µs
10
DC
1 ms
10 ms
1
10-1
10-1
Fig. 3.
100 ms
1
10
VDS (V)
102
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
PSMN1R0-40YLD
Product data sheet
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PSMN1R0-40YLD
Nexperia
N-channel 40 V, 1.1 mΩ, 280 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus
technology
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-mb)
thermal resistance
from junction to
mounting base
Fig. 4
-
0.56
0.63
K/W
Rth(j-a)
thermal resistance
from junction to
ambient
Fig. 5
-
50
-
K/W
Fig. 6
-
125
-
K/W
Zth(j-mb)
(K/W)
aaa-009500
1
δ = 0.5
10-1
0.2
0.1
0.05
0.02
10-2
single shot
P
δ=
Fig. 4.
10-5
10-4
10-3
10-2
T
10-1
tp (s)
1
Transient thermal impedance from junction to mounting base as a function of pulse duration
aaa-005751
aaa-005750
Fig. 5.
T
t
tp
10-3
10-6
tp
PCB layout for thermal resistance junction to
ambient 1” square pad; FR4 Board; 2oz copper
PSMN1R0-40YLD
Product data sheet
Fig. 6.
PCB layout for thermal resistance junction to
ambient minimum footprint; FR4 Board; 2oz
copper
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PSMN1R0-40YLD
Nexperia
N-channel 40 V, 1.1 mΩ, 280 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus
technology
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
40
-
-
V
ID = 250 µA; VGS = 0 V; Tj = -55 °C
36
-
-
V
VGS(th)
gate-source threshold
voltage
ID = 1 mA; VDS=VGS; Tj = 25 °C
1.05
1.7
2.2
V
ΔVGS(th)/ΔT
gate-source threshold
voltage variation with
temperature
25 °C ≤ Tj ≤ 150 °C
-
-5.1
-
mV/K
IDSS
drain leakage current
VDS = 32 V; VGS = 0 V; Tj = 25 °C
-
-
1
µA
VDS = 32 V; VGS = 0 V; Tj = 125 °C
-
9
-
µA
VGS = 16 V; VDS = 0 V; Tj = 25 °C
-
-
100
nA
VGS = -16 V; VDS = 0 V; Tj = 25 °C
-
-
100
nA
VGS = 10 V; ID = 25 A; Tj = 25 °C;
Fig. 10; Fig. 11
-
0.93
1.1
mΩ
VGS = 10 V; ID = 25 A; Tj = 150 °C;
Fig. 10; Fig. 11
-
-
1.93
mΩ
VGS = 4.5 V; ID = 25 A; Tj = 25 °C;
Fig. 10; Fig. 11
-
1.1
1.4
mΩ
VGS = 4.5 V; ID = 25 A; Tj = 150 °C;
Fig. 10; Fig. 11
-
-
2.45
mΩ
f = 1 MHz
-
1.3
-
Ω
ID = 25 A; VDS = 20 V; VGS = 10 V;
Fig. 12; Fig. 13
-
127
-
nC
ID = 25 A; VDS = 20 V; VGS = 4.5 V;
Fig. 12; Fig. 13
-
59
-
nC
ID = 0 A; VDS = 0 V; VGS = 10 V
-
115
-
nC
ID = 25 A; VDS = 20 V; VGS = 4.5 V;
Fig. 12; Fig. 13
-
19
-
nC
-
12
-
nC
Static characteristics
V(BR)DSS
IGSS
RDSon
RG
gate leakage current
drain-source on-state
resistance
gate resistance
Dynamic characteristics
QG(tot)
total gate charge
QGS
gate-source charge
QGS(th)
pre-threshold gatesource charge
QGS(th-pl)
post-threshold gatesource charge
-
8
-
nC
QGD
gate-drain charge
-
17
-
nC
VGS(pl)
gate-source plateau
voltage
ID = 25 A; VDS = 20 V; Fig. 12; Fig. 13
-
2.7
-
V
Ciss
input capacitance
-
8845
-
pF
Coss
output capacitance
VDS = 20 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; Fig. 14
-
1878
-
pF
Crss
reverse transfer
capacitance
-
382
-
pF
PSMN1R0-40YLD
Product data sheet
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PSMN1R0-40YLD
Nexperia
N-channel 40 V, 1.1 mΩ, 280 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus
technology
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
td(on)
turn-on delay time
-
52
-
ns
tr
rise time
VDS = 20 V; RL = 0.8 Ω; VGS = 4.5 V;
RG(ext) = 5 Ω
-
62
-
ns
td(off)
turn-off delay time
-
65
-
ns
tf
fall time
-
38
-
ns
Qoss
output charge
VGS = 0 V; VDS = 20 V; f = 1 MHz;
Tj = 25 °C
-
51
-
nC
Source-drain diode
VSD
source-drain voltage
IS = 25 A; VGS = 0 V; Tj = 25 °C; Fig. 15
-
0.78
1.2
V
trr
reverse recovery time
-
48
-
ns
Qr
recovered charge
IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V;
VDS = 20 V; Fig. 16
-
67
-
nC
ta
reverse recovery rise
time
-
28.6
-
ns
tb
reverse recovery fall
time
-
23.8
-
ns
[1]
[1]
includes capacitive recovery
aaa-008714
200
ID
(A)
10 V
4.5 V
RDSon
(mΩ)
3.5 V
aaa-008715
8
VGS = 3 V
160
6
120
4
80
2.8 V
2
40
2.6 V
2.4 V
0
Fig. 7.
0
0.5
1
1.5
VDS (V)
0
2
Output characteristics; drain current as a
Fig. 8.
function of drain-source voltage; typical values
PSMN1R0-40YLD
Product data sheet
0
2
6
8
10
12
14
VGS (V)
16
Drain-source on-state resistance as a function
of gate-source voltage; typical values
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PSMN1R0-40YLD
Nexperia
N-channel 40 V, 1.1 mΩ, 280 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus
technology
aaa-008716
400
ID
(A)
RDSon
(mΩ)
aaa-008717
5
2.8 V
3V
4
300
3
200
2
4.5 V
100
0
Fig. 9.
a
3.5 V
150°C
0
0.8
1.6
2.4
Tj = 25°C
1
3.2
VGS (V)
0
4
Transfer characteristics; drain current as a
function of gate-source voltage; typical values
10 V
0
40
80
120
160
ID (A)
200
Fig. 10. Drain-source on-state resistance as a function
of drain current; typical values
aaa-013039
2
VDS
10 V
1.6
ID
VGS = 4.5 V
VGS(pl)
1.2
VGS(th)
VGS
0.8
0.4
0
-60
QGS2
QGS1
-30
0
30
60
90
120 150
Tj (°C)
QGS
QGD
QG(tot)
003aaa508
Fig. 12. Gate charge waveform definitions
180
Fig. 11. Normalized drain-source on-state resistance
factor as a function of junction temperature
PSMN1R0-40YLD
Product data sheet
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PSMN1R0-40YLD
Nexperia
N-channel 40 V, 1.1 mΩ, 280 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus
technology
VGS
(V)
aaa-008718
10
aaa-008719
105
C
(pF)
8
104
Ciss
6
103
32 V
20 V
4
Crss
VDS = 8 V
102
2
0
0
20
40
60
80
100
120
QG (nC)
10
10-1
140
Fig. 13. Gate-source voltage as a function of gate
charge; typical values
IS
(A)
Coss
1
10
VDS (V)
Fig. 14. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
003aal160
aaa-008720
103
102
ID
(A)
trr
102
ta
tb
0
10
0.25 IRM
150°C
1
0
0.2
0.4
Tj = 25°C
0.6
0.8
1
VSD (V)
IRM
t (s)
1.2
Fig. 16. Reverse recovery timing definition
Fig. 15. Source current as a function of source-drain
voltage; typical values
PSMN1R0-40YLD
Product data sheet
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PSMN1R0-40YLD
Nexperia
N-channel 40 V, 1.1 mΩ, 280 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus
technology
11. Package outline
Plastic single-ended surface-mounted package (LFPAK56E); 4 leads
A
E
SOT1023
E1
A
b1
b2
(3x)
c1
mounting
base
H
D1
D
L
1
2
3
4
b
e
A1
w
A
X
c
C
θ
Lp
detail X
0
2.5
mm
5 mm
scale
Dimensions
Unit
y C
A
A1
b
b1
b2
c
c1
D(1) D1(1) E(1) E1(1)
max 1.10 0.15 0.50 4.41
0.25 0.30 4.70 4.45 5.30
nom
0.85
min 0.95 0.00 0.35 3.62
0.19 0.24 4.45
4.95
3.7
3.5
e
1.27
H
L
Lp
6.2
1.3
0.85
5.9
0.8
0.40
w
y
0.25
0.1
θ
8°
0°
Note
1. Plastic or metal protrusions of 0.15 mm per side are not included.
Outline
version
sot1023_po
References
IEC
JEDEC
JEITA
European
projection
Issue date
13-03-05
17-07-31
SOT1023
Fig. 17. Package outline LFPAK56; Power-SO8 (SOT1023)
PSMN1R0-40YLD
Product data sheet
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PSMN1R0-40YLD
Nexperia
N-channel 40 V, 1.1 mΩ, 280 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus
technology
12. Soldering
4.7
4.2
0.25
(2×)
0.9
(3×)
0.25
(2×)
0.6
(4×)
3.45
0.6
(3×)
2
3.5
2.55
0.25
(2×)
SR opening =
Cu + 0.075
1.1
2.15
3.3
SP opening =
Cu - 0.050
0.7
(4×)
1.27
3.81
solder lands
solder paste
125 µm stencil
solder resist
occupied area
sot1023_fr
Fig. 18. Reflow soldering footprint for LFPAK56; Power-SO8 (SOT1023)
PSMN1R0-40YLD
Product data sheet
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PSMN1R0-40YLD
Nexperia
N-channel 40 V, 1.1 mΩ, 280 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus
technology
for the products described herein shall be limited in accordance with the
Terms and conditions of commercial sale of Nexperia.
13. Legal information
Right to make changes — Nexperia reserves the right to make changes
to information published in this document, including without limitation
specifications and product descriptions, at any time and without notice. This
document supersedes and replaces all information supplied prior to the
publication hereof.
Data sheet status
Document
status [1][2]
Product
status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification
This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1]
[2]
[3]
Definition
Please consult the most recently issued document before initiating or
completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the Internet at URL http://www.nexperia.com.
Definitions
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subject to formal approval, which may result in modifications or additions.
Nexperia does not give any representations or warranties as to the accuracy
or completeness of information included herein and shall have no liability for
the consequences of use of such information.
Draft — The document is a draft version only. The content is still under
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modifications or additions. Nexperia does not give any representations or
warranties as to the accuracy or completeness of information included herein
and shall have no liability for the consequences of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the relevant
full data sheet, which is available on request via the local Nexperia sales
office. In case of any inconsistency or conflict with the short data sheet, the
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data sheet shall define the specification of the product as agreed between
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agreed otherwise in writing. In no event however, shall an agreement be
valid in which the Nexperia product is deemed to offer functions and qualities
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Limited warranty and liability — Information in this document is believed
to be accurate and reliable. However, Nexperia does not give any
representations or warranties, expressed or implied, as to the accuracy
or completeness of such information and shall have no liability for the
consequences of use of such information. Nexperia takes no responsibility
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Notwithstanding any damages that customer might incur for any reason
whatsoever, Nexperia’ aggregate and cumulative liability towards customer
PSMN1R0-40YLD
Product data sheet
Suitability for use — Nexperia products are not designed, authorized or
warranted to be suitable for use in life support, life-critical or safety-critical
systems or equipment, nor in applications where failure or malfunction
of an Nexperia product can reasonably be expected to result in personal
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Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no representation
or warranty that such applications will be suitable for the specified use
without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using Nexperia products, and Nexperia accepts no liability for
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liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — Nexperia products are
sold subject to the general terms and conditions of commercial sale, as
published at http://www.nexperia.com/profile/terms, unless otherwise agreed
in a valid written individual agreement. In case an individual agreement is
concluded only the terms and conditions of the respective agreement shall
apply. Nexperia hereby expressly objects to applying the customer’s general
terms and conditions with regard to the purchase of Nexperia products by
customer.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific Nexperia product is automotive qualified, the
product is not suitable for automotive use. It is neither qualified nor tested in
accordance with automotive testing or application requirements. Nexperia
accepts no liability for inclusion and/or use of non-automotive qualified
products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards,
customer (a) shall use the product without Nexperia’ warranty of the product
for such automotive applications, use and specifications, and (b) whenever
All information provided in this document is subject to legal disclaimers.
30 November 2017
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Nexperia B.V. 2017. All rights reserved
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PSMN1R0-40YLD
Nexperia
N-channel 40 V, 1.1 mΩ, 280 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus
technology
customer uses the product for automotive applications beyond Nexperia’
specifications such use shall be solely at customer’s own risk, and (c)
customer fully indemnifies Nexperia for any liability, damages or failed
product claims resulting from customer design and use of the product for
automotive applications beyond Nexperia’ standard warranty and Nexperia’
product specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
PSMN1R0-40YLD
Product data sheet
All information provided in this document is subject to legal disclaimers.
30 November 2017
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Nexperia B.V. 2017. All rights reserved
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PSMN1R0-40YLD
Nexperia
N-channel 40 V, 1.1 mΩ, 280 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus
technology
14. Contents
1. General description......................................................1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Marking.......................................................................... 2
8. Limiting values............................................................. 3
9. Thermal characteristics............................................... 5
10. Characteristics............................................................ 6
11. Package outline........................................................ 10
12. Soldering................................................................... 11
13. Legal information..................................................... 12
©
Nexperia B.V. 2017. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 30 November 2017
PSMN1R0-40YLD
Product data sheet
All information provided in this document is subject to legal disclaimers.
30 November 2017
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Nexperia B.V. 2017. All rights reserved
14 / 14