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BST82
N-channel enhancement mode field-effect transistor
Rev. 03 — 26 July 2000
Product specification
1. Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™1 technology.
Product availability:
BST82 in SOT23.
2. Features
■
■
■
■
TrenchMOS™ technology
Very fast switching
Logic level compatible
Subminiature surface mount package.
3. Applications
c
c
■ Relay driver
■ High speed line driver
■ Logic level translator.
4. Pinning information
Table 1:
Pinning - SOT23, simplified outline and symbol
Pin
Description
1
gate (g)
2
source (s)
3
drain (d)
Simplified outline
Symbol
3
d
g
03ab44
1
2
SOT23
1.
TrenchMOS is a trademark of Royal Philips Electronics.
s
03ab30
N-channel MOSFET
BST82
Philips Semiconductors
N-channel enhancement mode field-effect transistor
5. Quick reference data
Table 2:
Quick reference data
Symbol Parameter
Conditions
Typ
Max
Unit
Tj = 25 to 150 °C
−
100
V
VDS
drain-source voltage (DC)
ID
drain current (DC)
Tsp = 25 °C; VGS = 5 V
−
190
mA
Ptot
total power dissipation
Tsp = 25 °C
−
0.83
W
Tj
junction temperature
−
150
°C
RDSon
drain-source on-state resistance
5
10
Ω
Conditions
Min
Max
Unit
VGS = 5 V; ID = 150 mA
6. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
VDS
drain-source voltage (DC)
Tj = 25 to 150 °C
−
100
V
VDGR
drain-gate voltage (DC)
Tj = 25 to 150 °C; RGS = 20 kΩ
−
100
V
VGS
gate-source voltage (DC)
−
±20
V
ID
drain current (DC)
Tsp = 25 °C; VGS = 5 V; Figure 2 and 3
−
190
mA
Tsp = 100 °C; VGS = 5 V; Figure 2
−
120
mA
IDM
peak drain current
Tsp = 25 °C; pulsed; tp ≤ 10 µs;
Figure 3
−
0.8
A
Ptot
total power dissipation
Tsp = 25 °C; Figure 1
−
0.83
W
Tstg
storage temperature
−65
+150
°C
Tj
operating junction temperature
−65
+150
°C
Source-drain diode
IS
source (diode forward) current (DC)
Tsp = 25 °C
−
190
mA
ISM
peak source (diode forward) current
Tsp = 25 °C; pulsed; tp ≤ 10 µs
−
0.8
A
© Philips Electronics N.V. 2000. All rights reserved.
9397 750 07223
Product specification
Rev. 03 — 26 July 2000
2 of 13
BST82
Philips Semiconductors
N-channel enhancement mode field-effect transistor
03aa17
03aa25
120
120
der
(%)
100
Ider
(%)
100
80
80
60
60
40
40
20
20
P
0
0
0
25
50
75
100
125
Tsp
150
(oC)
0
175
25
50
75
100
125
150 175
Tsp (oC)
VGS ≥ 5 V
P tot
P der = ---------------------- × 100%
P
°
ID
I der = ------------------- × 100%
I
°
tot ( 25 C )
D ( 25 C )
Fig 1. Normalized total power dissipation as a
function of solder point temperature.
Fig 2. Normalized continuous drain current as a
function of solder point temperature.
03aa60
1
tp = 10 µs
RDSon = VDS/ ID
ID
(A)
100 µs
10-1
1 ms
10 ms
D.C.
δ=
P
10-2
tp
100 ms
T
t
tp
T
Tsp = 25oC
10-3
1
10
102
VDS (V)
103
Tsp = 25 °C; IDM is single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
© Philips Electronics N.V. 2000. All rights reserved.
9397 750 07223
Product specification
Rev. 03 — 26 July 2000
3 of 13
BST82
Philips Semiconductors
N-channel enhancement mode field-effect transistor
7. Thermal characteristics
Table 4:
Thermal characteristics
Symbol
Parameter
Conditions
Value
Unit
Rth(j-sp)
thermal resistance from junction to solder
point
mounted on a metal clad substrate;
Figure 4
150
K/W
Rth(j-a)
thermal resistance from junction to ambient
mounted on a printed circuit board;
minimum footprint
350
K/W
7.1 Transient thermal impedance
03aa57
103
Zth(j-sp)
(K/W)
102
δ = 0.5
0.2
0.1
10
0.05
0.02
1
δ=
P
tp
T
single pulse
t
tp
T
0.1
10-5
10-4
10-3
10-2
10-1
1
10
tp (s)
Mounted on a metal substrate.
Fig 4. Transient thermal impedance from junction to solder point as a function of
pulse duration.
© Philips Electronics N.V. 2000. All rights reserved.
9397 750 07223
Product specification
Rev. 03 — 26 July 2000
4 of 13
BST82
Philips Semiconductors
N-channel enhancement mode field-effect transistor
8. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise specified
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Tj = 25 °C
100
130
−
V
Tj = −55 °C
89
−
−
V
Tj = 25 °C
1
2
−
V
Tj = 150 °C
0.6
−
−
V
Tj = −55 °C
−
−
3.5
V
Tj = 25 °C
−
0.01
1.0
µA
Tj = 150 °C
−
−
10
µA
−
10
100
nA
Tj = 25 °C
−
5
10
Ω
Tj = 150 °C
−
−
23
Ω
Static characteristics
V(BR)DSS
VGS(th)
IDSS
drain-source breakdown
voltage
ID = 10 µA; VGS = 0 V
gate-source threshold voltage ID = 1 mA; VDS = VGS;
Figure 9
drain-source leakage current
VDS = 60 V; VGS = 0 V
IGSS
gate-source leakage current
VGS = ±20 V; VDS = 0 V
RDSon
drain-source on-state
resistance
VGS = 5 V; ID = 150 mA;
Figure 7 and 8
Dynamic characteristics
gfs
forward transconductance
VDS = 5 V; ID = 175 mA;
Figure 11
−
350
−
mS
Ciss
input capacitance
−
25
40
pF
Coss
output capacitance
VGS = 0 V; VDS = 10 V;
f = 1 MHz; Figure 12
−
8.5
15
pF
Crss
reverse transfer capacitance
ton
turn-on time
toff
turn-off time
−
5
10
pF
VDD = 50 V; RD = 250 Ω;
VGS = 10 V; RG = 50 Ω;
RGS = 50 Ω
−
3
10
ns
−
12
15
ns
Source-drain diode
VSD
source-drain (diode forward)
voltage
IS = 300 mA; VGS = 0 V;
Figure 13
−
0.95
1.5
V
trr
reverse recovery time
−
30
−
ns
Qr
recovered charge
IS = 300 mA;
dIS/dt = −100 A/µs;
VGS = 0 V; VDS = 25 V
−
30
−
nC
© Philips Electronics N.V. 2000. All rights reserved.
9397 750 07223
Product specification
Rev. 03 — 26 July 2000
5 of 13
BST82
Philips Semiconductors
N-channel enhancement mode field-effect transistor
03aa63
0.5
ID
(A) 0.45
03aa65
0.7
Tj = 25oC
ID
(A)
VGS = 10V
5V
0.4
VDS > ID X RDSon
0.6
0.5
0.35
0.3
0.25
Tj = 25oC
0.4
4V
150oC
0.3
0.2
3.5 V
0.15
0.2
0.1
0.1
3V
0.05
0
0
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
2
0
1
2
3
4
5
6
7
8
VGS (V)
VDS (V)
Tj = 25 °C
Tj = 25 °C and 150 °C; VDS > ID × RDSon
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
03aa29
03aa64
12
3V
RDSon 11
(Ω)
10
Tj = 25oC
3.5V
9
Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
3
a 2.8
2.6
2.4
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
4V
8
7
6
5V
5
4
VGS = 10V
3
2
1
0
0
0.1
0.2
0.3
0.4
ID (A)
-60
0.5
Tj = 25 °C
20
60
100
140
180
Tj (oC)
R DSon
a = --------------------------R DSon ( 25 °C )
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
© Philips Electronics N.V. 2000. All rights reserved.
9397 750 07223
Product specification
-20
Rev. 03 — 26 July 2000
6 of 13
BST82
Philips Semiconductors
N-channel enhancement mode field-effect transistor
03aa34
3
03aa37
10-1
I
D
VGS(th)
(A)
10-2
(V) 2.5
typ
2
min
10-3
typ
1.5
10-4
min
1
10-5
0.5
10-6
0
-60
-20
20
60
100
140
180
Tj (oC)
0
0.5
1
1.5
2
2.5
3
VGS (V)
Tj = 25 °C; VDS = 5 V
ID = 1 mA; VDS = VGS
Fig 9. Gate-source threshold voltage as a function of
junction temperature.
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
03aa66
0.5
gfs
0.45
(S)
03aa68
102
VDS > ID X RDSon
0.4
Ciss, Coss,
Crss (pF)
Tj = 25oC
Ciss
0.35
0.3
0.25
10
150oC
Coss
0.2
0.15
0.1
0.05
Crss
0
0
0.1
0.2
0.3
0.4
0.5
0.6
1
0.7
10-1
Tj = 25 °C and 150 °C; VDS > ID × RDSon
102
10
VGS = 0 V; f = 1 MHz
Fig 11. Forward transconductance as a function of
drain current; typical values.
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
© Philips Electronics N.V. 2000. All rights reserved.
9397 750 07223
Product specification
1
VDS (V)
ID (A)
Rev. 03 — 26 July 2000
7 of 13
BST82
Philips Semiconductors
N-channel enhancement mode field-effect transistor
03aa67
1
IS
(A) 0.9
VGS = 0 V
0.8
0.7
0.6
150oC
0.5
0.4
Tj = 25oC
0.3
0.2
0.1
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
VSD (V)
Tj = 25 °C and 150 °C; VGS = 0 V
Fig 13. Source (diode forward) current as a function of source-drain (diode forward)
voltage; typical values.
© Philips Electronics N.V. 2000. All rights reserved.
9397 750 07223
Product specification
Rev. 03 — 26 July 2000
8 of 13
BST82
Philips Semiconductors
N-channel enhancement mode field-effect transistor
9. Package outline
Plastic surface mounted package; 3 leads
SOT23
D
E
B
A
X
HE
v M A
3
Q
A
A1
1
2
e1
bp
c
w M B
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max.
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.9
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
1.9
0.95
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
OUTLINE
VERSION
SOT23
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
99-09-13
TO-236AB
Fig 14. SOT23.
© Philips Electronics N.V. 2000. All rights reserved.
9397 750 07223
Product specification
Rev. 03 — 26 July 2000
9 of 13
BST82
Philips Semiconductors
N-channel enhancement mode field-effect transistor
10. Revision history
Table 6:
Revision history
Rev Date
03
20000726
CPCN
Description
HZG303
Product specification; third version; supersedes BST82_CNV_2 of 970623.
Converted from VDMOS (Nijmegen) to TrenchMOS™ technology (Hazel Grove).
02
19970623
-
Product specification; second version.
01
19901031
-
Product specification; initial version.
© Philips Electronics N.V. 2000. All rights reserved.
9397 750 07223
Product specification
Rev. 03 — 26 July 2000
10 of 13
BST82
Philips Semiconductors
N-channel enhancement mode field-effect transistor
11. Data sheet status
Datasheet status
Product status
Definition [1]
Objective specification
Development
This data sheet contains the design target or goal specifications for product development. Specification may
change in any manner without notice.
Preliminary specification
Qualification
This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips
Semiconductors reserves the right to make changes at any time without notice in order to improve design and
supply the best possible product.
Product specification
Production
This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any
time without notice in order to improve design and supply the best possible product.
[1]
Please consult the most recently issued data sheet before initiating or completing a design.
12. Definitions
13. Disclaimers
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
Right to make changes — Philips Semiconductors reserves the right to
make changes, without notice, in the products, including circuits, standard
cells, and/or software, described or contained herein in order to improve
design and/or performance. Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
licence or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products
are free from patent, copyright, or mask work right infringement, unless
otherwise specified.
© Philips Electronics N.V. 2000 All rights reserved.
9397 750 07223
Product specification
Rev. 03 — 26 July 2000
11 of 13
BST82
Philips Semiconductors
N-channel enhancement mode field-effect transistor
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The Netherlands, Fax. +31 40 272 4825
Internet: http://www.semiconductors.philips.com
(SCA70)
© Philips Electronics N.V. 2000. All rights reserved.
9397 750 07223
Product specification
Rev. 03 — 26 July 2000
12 of 13
BST82
Philips Semiconductors
N-channel enhancement mode field-effect transistor
Contents
1
2
3
4
5
6
7
7.1
8
9
10
11
12
13
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Transient thermal impedance . . . . . . . . . . . . . . 4
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
© Philips Electronics N.V. 2000.
Printed in The Netherlands
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner.
The information presented in this document does not form part of any quotation or
contract, is believed to be accurate and reliable and may be changed without notice. No
liability will be accepted by the publisher for any consequence of its use. Publication
thereof does not convey nor imply any license under patent- or other industrial or
intellectual property rights.
Date of release: 26 July 2000
Document order number: 9397 750 07223
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