PMF370XN,115

PMF370XN N-channel TrenchMOS extremely low level FET 5 July 2019 Product data sheet 1. General description Extremely low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 2. Features and benefits • • • • • Low conduction losses due to low on-state resistance Low threshold voltage Saves PCB space due to small footprint (40 % smaller than SOT23) Suitable for low gate drive sources Surface-mounted package 3. Applications • • Driver circuits Switching in portable appliances 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage 25 °C ≤ Tj ≤ 150 °C - - 30 V ID drain current VGS = 4.5 V; Tsp = 25 °C - - 0.87 A Ptot total power dissipation Tsp = 25 °C - - 0.56 W VGS = 4.5 V; ID = 0.2 A; Tj = 25 °C - 370 440 mΩ Static characteristics RDSon drain-source on-state resistance PMF370XN Nexperia N-channel TrenchMOS extremely low level FET 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 S source 3 D drain Simplified outline Graphic symbol 3 D G mbb076 1 S 2 SC-70 (SOT323) 6. Ordering information Table 3. Ordering information Type number Package PMF370XN Name Description Version SC-70 plastic surface-mounted package; 3 leads SOT323 7. Marking Table 4. Marking codes Type number Marking code[1] PMF370XN F6% [1] % = placeholder for manufacturing site code PMF370XN Product data sheet All information provided in this document is subject to legal disclaimers. 5 July 2019 © Nexperia B.V. 2019. All rights reserved 2 / 14 PMF370XN Nexperia N-channel TrenchMOS extremely low level FET 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134) Symbol Parameter Conditions Min Max Unit VDS drain-source voltage 25 °C ≤ Tj ≤ 150 °C - 30 V VDGR drain-gate voltage 25 °C ≤ Tj ≤ 150 °C; RGS = 20 kΩ - 30 V VGS gate-source voltage ID drain current -12 12 V VGS = 4.5 V; Tsp = 25 °C - 0.87 A VGS = 4.5 V; Tsp = 100 °C - 0.55 A IDM peak drain current Tsp = 25 °C; pulsed; tp ≤ 10 µs - 1.74 A Ptot total power dissipation Tsp = 25 °C - 0.56 W Tj junction temperature -55 150 °C Tstg storage temperature -55 150 °C IS source current Tsp = 25 °C - 0.47 A ISM peak source current pulsed; tp ≤ 10 µs; Tsp = 25 °C - 0.94 A 03aa25 120 Ider (%) Pder (%) 80 80 40 40 0 Fig. 1. 03aa17 120 0 50 100 150 Tsp (°C) Normalized continuous drain current as a function of solder point temperature PMF370XN Product data sheet 0 200 Fig. 2. 0 100 150 Tsp (°C) 200 Normalized total power dissipation as a function of solder point temperature All information provided in this document is subject to legal disclaimers. 5 July 2019 50 © Nexperia B.V. 2019. All rights reserved 3 / 14 PMF370XN Nexperia N-channel TrenchMOS extremely low level FET 03an15 10 ID (A) Limit RDSon = VDS / ID tp = 10 µ s 1 100 µ s 1 ms 10-1 DC 10 ms 100 ms 10-2 10-1 Fig. 3. 1 10 102 V DS (V) Safe operating area; continuous and peak drain currents as a function of drain-source voltage PMF370XN Product data sheet All information provided in this document is subject to legal disclaimers. 5 July 2019 © Nexperia B.V. 2019. All rights reserved 4 / 14 PMF370XN Nexperia N-channel TrenchMOS extremely low level FET 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Rth(j-sp) Conditions thermal resistance from junction to solder point Min Typ Max Unit - - 220 K/W 03an27 103 Zth(j-sp) (K/W) δ = 0.5 102 0.2 10 0.1 0.05 0.02 P single pulse δ= tp 1 10-4 Fig. 4. 10-3 10-2 10-1 1 tp T t T tp (s) 10 Transient thermal impedance from junction to solder point as a function of pulse duration PMF370XN Product data sheet All information provided in this document is subject to legal disclaimers. 5 July 2019 © Nexperia B.V. 2019. All rights reserved 5 / 14 PMF370XN Nexperia N-channel TrenchMOS extremely low level FET 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = -55 °C 27 - - V ID = 250 µA; VGS = 0 V; Tj = 25 °C 30 - - V gate-source threshold voltage ID = 250 µA; VDS = VGS; Tj = -55 °C - - 1.8 V ID = 250 µA; VDS = VGS; Tj = 150 °C 0.35 - - V ID = 250 µA; VDS = VGS; Tj = 25 °C 0.5 1 1.5 V VDS = 30 V; VGS = 0 V; Tj = 25 °C - - 1 µA VDS = 30 V; VGS = 0 V; Tj = 70 °C - - 2 µA VDS = 30 V; VGS = 0 V; Tj = 150 °C - - 10 µA VGS = 12 V; VDS = 0 V; Tj = 25 °C - 10 100 nA VGS = -12 V; VDS = 0 V; Tj = 25 °C - 10 100 nA VGS = 2.5 V; ID = 0.1 A; Tj = 25 °C - 550 650 mΩ VGS = 4.5 V; ID = 0.2 A; Tj = 150 °C - 629 748 mΩ VGS = 4.5 V; ID = 0.2 A; Tj = 25 °C - 370 440 mΩ VDS = 15 V; ID = 1 A; VGS = 4.5 V; Tj = 25 °C - 0.65 - nC - 0.14 - nC - 0.18 - nC - 37 - pF - 8.5 - pF - 5.5 - pF - 6.5 - ns - 9.5 - ns Static characteristics V(BR)DSS VGSth IDSS IGSS RDSon drain leakage current gate leakage current drain-source on-state resistance Dynamic characteristics QG(tot) total gate charge QGS gate-source charge QGD gate-drain charge Ciss input capacitance Coss output capacitance Crss reverse transfer capacitance td(on) turn-on delay time tr rise time td(off) turn-off delay time - 14 - ns tf fall time - 5.5 - ns - 0.81 1.2 V VDS = 25 V; f = 1 MHz; VGS = 0 V; Tj = 25 °C VDS = 15 V; RL = 15 Ω; VGS = 4.5 V; RG(ext) = 6 Ω; Tj = 25 °C Source-drain diode VSD source-drain voltage PMF370XN Product data sheet IS = 0.3 A; VGS = 0 V; Tj = 25 °C All information provided in this document is subject to legal disclaimers. 5 July 2019 © Nexperia B.V. 2019. All rights reserved 6 / 14 PMF370XN Nexperia N-channel TrenchMOS extremely low level FET 03ao00 2.5 ID (A) ID (A) 2 3 1 2.5 1 0.5 2 0.5 0 0.5 1 1.5 VDS (V) 0 2 0 1 2 3 4 VGS (V) 5 Tj = 25 °C Tj = 25 °C and 150 °C; VDS > ID × RDSon Fig. 6. Output characteristics: drain current as a function of drain-source voltage; typical values Transfer characteristics: drain current as a function of gate-source voltage; typical values 03al82 2 03an65 10- 3 VGS (th) (V) ID (A) 1.5 max 1 10- 4 typ min 10- 5 0 - 60 0 60 120 Tj (°C) 10- 6 180 Gate-source threshold voltage as a function of junction temperature PMF370XN Product data sheet typ max min 0.5 Fig. 7. Tj = 150 °C 1.5 1.8 Fig. 5. 25 °C 2 1.5 0 03ao02 2.5 3.5 VGS (V) = 4.5 Fig. 8. 0 0.8 1.2 VGS (V) 1.6 Subthreshold drain current as a function of gate-source voltage All information provided in this document is subject to legal disclaimers. 5 July 2019 0.4 © Nexperia B.V. 2019. All rights reserved 7 / 14 PMF370XN Nexperia N-channel TrenchMOS extremely low level FET 03ao01 1 VGS (V) = 2.5 RDSon (Ω) 03al00 1.8 3 a 0.8 3.5 1.2 0.6 4.5 0.4 0.6 0.2 0 Fig. 9. 0 0.5 1 1.5 2 ID (A) 0 - 60 2.5 Drain-source on-state resistance as a function of drain current; typical values 0 60 120 03ao05 VGS (V) ID 180 Fig. 10. Normalized drain-source on-state resistance factor as a function of junction temperature 5 VDS Tj (°C) ID = 1 A Tj = 25 °C 4 VGS(pl) VDS = 15 V 3 VGS(th) VGS 2 QGS2 QGS1 QGS QGD QG(tot) 1 003aaa508 Fig. 11. Gate charge waveform definitions 0 0 0.2 0.4 0.6 QG (nC) 0.8 Fig. 12. Gate-source voltage as a function of gate charge; typical values PMF370XN Product data sheet All information provided in this document is subject to legal disclaimers. 5 July 2019 © Nexperia B.V. 2019. All rights reserved 8 / 14 PMF370XN Nexperia N-channel TrenchMOS extremely low level FET 03ao04 102 03ao03 1 VGS = 0 V IS (A) 0.8 Ciss C (pF) 0.6 10 Coss 0.4 Crss 0.2 1 10- 1 1 10 VDS (V) 0 102 150 °C 0 0.2 0.4 Tj = 25 °C 0.6 0.8 1 VSD (V) Tj = 25 °C and 150 °C; VGS = 0 V VGS = 0 V; 1 MHz Fig. 13. Input, output and reverse transfer capacitances Fig. 14. Source current as a function of source-drain voltage; typical values as a function of drain-source voltage; typical values PMF370XN Product data sheet All information provided in this document is subject to legal disclaimers. 5 July 2019 © Nexperia B.V. 2019. All rights reserved 9 / 14 PMF370XN Nexperia N-channel TrenchMOS extremely low level FET 11. Package outline Plastic surface-mounted package; 3 leads SOT323 D B E A X HE y v M A 3 Q A A1 1 c 2 e1 bp Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w mm 1.1 0.8 0.1 0.4 0.3 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.23 0.13 0.2 0.2 OUTLINE VERSION REFERENCES IEC JEDEC SOT323 JEITA EUROPEAN PROJECTION ISSUE DATE 04-11-04 06-03-16 SC-70 Fig. 15. Package outline SC-70 (SOT323) PMF370XN Product data sheet All information provided in this document is subject to legal disclaimers. 5 July 2019 © Nexperia B.V. 2019. All rights reserved 10 / 14 PMF370XN Nexperia N-channel TrenchMOS extremely low level FET 12. Soldering 2.65 1.85 1.325 solder lands solder resist 2 2.35 0.6 (3×) 3 solder paste 1.3 occupied area 0.5 (3×) 1 Dimensions in mm 0.55 (3×) sot323_fr Fig. 16. Reflow soldering footprint for SC-70 (SOT323) 4.6 2.575 1.425 (3×) solder lands solder resist occupied area 1.8 3.65 2.1 09 (2×) Dimensions in mm preferred transport direction during soldering sot323_fw Fig. 17. Wave soldering footprint for SC-70 (SOT323) PMF370XN Product data sheet All information provided in this document is subject to legal disclaimers. 5 July 2019 © Nexperia B.V. 2019. All rights reserved 11 / 14 PMF370XN Nexperia N-channel TrenchMOS extremely low level FET 13. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PMF370XN v.4 20190705 Product data sheet - PMF370XN v.3 Modifications: • • • PMF370XN v.3 20080620 Product data sheet - PMF370XN v.2 PMF370XN v.2 20051206 Product data sheet - PMF370XN v.1 PMF370XN v.1 20040211 Product data sheet - - PMF370XN Product data sheet Measurement conditions for V(BR)DSS revised. Legal texts have been adapted to the new company name where appropriate. The format of this data sheet has been redesigned to comply with the identity guidelines of Nexperia. All information provided in this document is subject to legal disclaimers. 5 July 2019 © Nexperia B.V. 2019. All rights reserved 12 / 14 PMF370XN Nexperia N-channel TrenchMOS extremely low level FET 14. Legal information injury, death or severe property or environmental damage. Nexperia and its suppliers accept no liability for inclusion and/or use of Nexperia products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Data sheet status Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Document status [1][2] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] [2] [3] Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the internet at https://www.nexperia.com. Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. Nexperia does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. 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Suitability for use — Nexperia products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an Nexperia product can reasonably be expected to result in personal PMF370XN Product data sheet Applications — Applications that are described herein for any of these products are for illustrative purposes only. Nexperia makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using Nexperia products, and Nexperia accepts no liability for any assistance with applications or customer product design. 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Nexperia accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without Nexperia’s warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond Nexperia’s specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies Nexperia for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond Nexperia’s standard warranty and Nexperia’s product specifications. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. All information provided in this document is subject to legal disclaimers. 5 July 2019 © Nexperia B.V. 2019. All rights reserved 13 / 14 PMF370XN Nexperia N-channel TrenchMOS extremely low level FET Contents 1. General description...................................................... 1 2. Features and benefits.................................................. 1 3. Applications.................................................................. 1 4. Quick reference data....................................................1 5. Pinning information......................................................2 6. Ordering information....................................................2 7. Marking.......................................................................... 2 8. Limiting values............................................................. 3 9. Thermal characteristics............................................... 5 10. Characteristics............................................................ 6 11. Package outline........................................................ 10 12. Soldering................................................................... 11 13. Revision history........................................................12 14. Legal information......................................................13 © Nexperia B.V. 2019. All rights reserved For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 5 July 2019 PMF370XN Product data sheet All information provided in this document is subject to legal disclaimers. 5 July 2019 © Nexperia B.V. 2019. All rights reserved 14 / 14