PSMN3R5-30YL
N-channel 30 V 3.5 mΩ logic level MOSFET in LFPAK
3 August 2018
Product data sheet
1. General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package
using TrenchMOS technology. This product is designed and qualified for use in industrial and
communications applications.
2. Features and benefits
•
•
High efficiency due to low switching and conduction losses
Suitable for logic level gate drive sources
3. Applications
•
•
•
•
Class-D amplifiers
DC-to-DC converters
Motor control
Server power supplies
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDS
drain-source voltage
25 °C ≤ Tj ≤ 175 °C
-
-
30
V
ID
drain current
VGS = 10 V; Tmb = 25 °C; Fig. 2
-
-
100
A
Ptot
total power dissipation
Tmb = 25 °C; Fig. 1
-
-
74
W
VGS = 10 V; ID = 15 A; Tj = 25 °C
-
2.43
3.5
mΩ
ID = 10 A; VDS = 12 V; VGS = 4.5 V;
Fig. 14; Fig. 15
-
5
-
nC
-
19
-
nC
ID = 100 A; Vsup ≤ 30 V; RGS = 50 Ω;
VGS = 10 V; Tj(init) = 25 °C; unclamped
-
-
54
mJ
[1]
Static characteristics
RDSon
drain-source on-state
resistance
Dynamic characteristics
QGD
gate-drain charge
QG(tot)
total gate charge
Avalanche ruggedness
EDS(AL)S
[1]
non-repetitive drainsource avalanche
energy
Continuous current is limited by package.
PSMN3R5-30YL
Nexperia
N-channel 30 V 3.5 mΩ logic level MOSFET in LFPAK
5. Pinning information
Table 2. Pinning information
Pin
Symbol Description
Simplified outline
1
S
source
2
S
source
3
S
source
4
G
gate
mb
D
mounting base; connected to
drain
Graphic symbol
D
mb
G
mbb076
S
1 2 3 4
LFPAK56; PowerSO8 (SOT669)
6. Ordering information
Table 3. Ordering information
Type number
Package
PSMN3R5-30YL
Name
Description
Version
LFPAK56;
Power-SO8
Plastic single-ended surface-mounted package (LFPAK56;
Power-SO8); 4 leads
SOT669
7. Marking
Table 4. Marking codes
Type number
Marking code
PSMN3R5-30YL
3R530
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
25 °C ≤ Tj ≤ 175 °C
-
30
V
VDSM
peak drain-source
voltage
tp ≤ 25 ns; f ≤ 500 kHz; EDS(AL) ≤ 180 nJ;
pulsed
-
35
V
VDGR
drain-gate voltage
25 °C ≤ Tj ≤ 175 °C; RGS = 20 kΩ
-
30
V
VGS
gate-source voltage
-20
20
V
Ptot
total power dissipation
Tmb = 25 °C; Fig. 1
-
74
W
ID
drain current
VGS = 10 V; Tmb = 100 °C; Fig. 2
[1]
-
86
A
VGS = 10 V; Tmb = 25 °C; Fig. 2
[1]
-
100
A
-
447
A
IDM
peak drain current
pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 3
Tstg
storage temperature
-55
175
°C
Tj
junction temperature
-55
175
°C
-
100
A
-
447
A
Source-drain diode
IS
source current
Tmb = 25 °C
ISM
peak source current
pulsed; tp ≤ 10 µs; Tmb = 25 °C
[1]
Avalanche ruggedness
PSMN3R5-30YL
Product data sheet
All information provided in this document is subject to legal disclaimers.
3 August 2018
©
Nexperia B.V. 2018. All rights reserved
2 / 13
PSMN3R5-30YL
Nexperia
N-channel 30 V 3.5 mΩ logic level MOSFET in LFPAK
Symbol
Parameter
EDS(AL)S
non-repetitive drainID = 100 A; Vsup ≤ 30 V; RGS = 50 Ω;
source avalanche energy VGS = 10 V; Tj(init) = 25 °C; unclamped
[1]
Conditions
Min
Max
Unit
-
54
mJ
Continuous current is limited by package.
03aa16
120
003aad989
120
ID
(A)
100
Pder
(%)
(1)
80
80
60
40
40
20
0
0
50
100
150
Tmb (°C)
0
200
Fig. 2.
Fig. 1.
Normalized total power dissipation as a
function of mounting base temperature
0
50
100
150
200
Tmb (°C)
Continuous drain current as a function of
mounting base temperature
003aac731
103
Limit RDSon = V DS / ID
ID
(A)
102
10 µ s
100 µ s
10
DC
1 ms
10 ms
1
100 ms
10-1
10-1
Fig. 3.
1
10
102
VDS (V)
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Rth(j-mb)
Conditions
thermal resistance from Fig. 4
junction to mounting
base
PSMN3R5-30YL
Product data sheet
All information provided in this document is subject to legal disclaimers.
3 August 2018
Min
Typ
Max
Unit
-
0.6
1.68
K/W
©
Nexperia B.V. 2018. All rights reserved
3 / 13
PSMN3R5-30YL
Nexperia
N-channel 30 V 3.5 mΩ logic level MOSFET in LFPAK
003aac717
10
Zth(j-mb)
(K/W)
1
δ = 0.5
0.2
10-1
0.1
P
0.05
δ=
tp
T
0.02
10
10-6
Fig. 4.
tp
single shot
-2
10-5
10-4
10-3
10-2
10-1
t
T
tp (s)
1
Transient thermal impedance from junction to mounting base as a function of pulse duration
10. Characteristics
Table 7. Characteristics
Tested to JEDEC standards where applicable.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
30
-
-
V
ID = 250 µA; VGS = 0 V; Tj = -55 °C
27
-
-
V
gate-source threshold
voltage
ID = 1 mA; VDS=VGS; Tj = 25 °C; Fig. 11;
Fig. 12
1.3
1.7
2.15
V
ID = 1 mA; VDS=VGS; Tj = 150 °C;
Fig. 12
0.65
-
-
V
ID = 1 mA; VDS=VGS; Tj = -55 °C; Fig. 12
-
-
2.45
V
VDS = 30 V; VGS = 0 V; Tj = 25 °C
-
-
1
µA
VDS = 30 V; VGS = 0 V; Tj = 150 °C
-
-
100
µA
VGS = 16 V; VDS = 0 V; Tj = 25 °C
-
-
100
nA
VGS = -16 V; VDS = 0 V; Tj = 25 °C
-
-
100
nA
VGS = 4.5 V; ID = 15 A; Tj = 25 °C
-
3.37
4.61
mΩ
VGS = 10 V; ID = 15 A; Tj = 150 °C;
Fig. 13
-
-
6
mΩ
VGS = 10 V; ID = 15 A; Tj = 25 °C
-
2.43
3.5
mΩ
f = 1 MHz
-
0.53
1.5
Ω
ID = 10 A; VDS = 12 V; VGS = 4.5 V;
Fig. 14; Fig. 15
-
19
-
nC
ID = 0 A; VDS = 0 V; VGS = 10 V
-
37
-
nC
ID = 10 A; VDS = 12 V; VGS = 10 V;
Fig. 14; Fig. 15
-
41
-
nC
ID = 10 A; VDS = 12 V; VGS = 4.5 V;
Fig. 14; Fig. 15
-
6
-
nC
-
4
-
nC
Static characteristics
V(BR)DSS
VGS(th)
IDSS
IGSS
RDSon
RG
drain leakage current
gate leakage current
drain-source on-state
resistance
gate resistance
Dynamic characteristics
QG(tot)
total gate charge
QGS
gate-source charge
QGS(th)
pre-threshold gatesource charge
PSMN3R5-30YL
Product data sheet
All information provided in this document is subject to legal disclaimers.
3 August 2018
©
Nexperia B.V. 2018. All rights reserved
4 / 13
PSMN3R5-30YL
Nexperia
N-channel 30 V 3.5 mΩ logic level MOSFET in LFPAK
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
QGS(th-pl)
post-threshold gatesource charge
-
2
-
nC
QGD
gate-drain charge
VGS(pl)
gate-source plateau
voltage
VDS = 12 V; Fig. 14; Fig. 15
-
5
-
nC
-
2.4
-
V
Ciss
input capacitance
Coss
output capacitance
VDS = 12 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; Fig. 16
-
2458
3441
pF
Crss
reverse transfer
capacitance
-
532
718
pF
-
252
353
pF
td(on)
turn-on delay time
-
33
-
ns
tr
rise time
-
50
-
ns
td(off)
tf
turn-off delay time
-
45
-
ns
fall time
-
18
-
ns
VDS = 12 V; RL = 0.5 Ω; VGS = 4.5 V;
RG(ext) = 4.7 Ω
Source-drain diode
VSD
source-drain voltage
IS = 25 A; VGS = 0 V; Tj = 25 °C; Fig. 17
-
0.82
1.2
V
trr
reverse recovery time
-
37
-
ns
Qr
recovered charge
IS = 20 A; dIS/dt = -100 A/µs; VGS = 0 V;
VDS = 20 V
-
31
-
nC
003aac709
80
003aac710
100
10
ID
(A)
ID
(A)
3
V GS (V) = 4.5
80
60
2.8
60
40
40
2.6
20
2.4
Tj = 150 ° C
20
25 °C
2.2
0
Fig. 5.
0
1
2
0
3 V (V) 4
GS
Transfer characteristics: drain current as a
function of gate-source voltage; typical values
PSMN3R5-30YL
Product data sheet
Fig. 6.
0
2
6
8
10
VDS (V)
Output characteristics: drain current as a
function of drain-source voltage; typical values
All information provided in this document is subject to legal disclaimers.
3 August 2018
4
©
Nexperia B.V. 2018. All rights reserved
5 / 13
PSMN3R5-30YL
Nexperia
N-channel 30 V 3.5 mΩ logic level MOSFET in LFPAK
003aac711
6
003aac716
4000
Ciss
C
(pF)
RDSon
(mΩ)
3000
4
2000
Crss
1000
2
Fig. 7.
2
4
6
8
VGS (V)
0
10
Drain-source on-state resistance as a function
of gate-source voltage; typical values
Fig. 8.
003aac718
120
0
2
4
6
8
Input and reverse transfer capacitances as a
function of gate-source voltage; typical values
003aac707
6
RDSon
(mΩ)
gfs
(S)
10
VGS (V)
100
5
80
4
VGS (V) = 3.2
4.5
3
60
10
40
Fig. 9.
0
10
20
30
40
ID (A)
2
50
Forward transconductance as a function of
drain current; typical values
PSMN3R5-30YL
Product data sheet
0
20
40
60
80 I (A) 100
D
Fig. 10. Drain-source on-state resistance as a function
of drain current; typical values
All information provided in this document is subject to legal disclaimers.
3 August 2018
©
Nexperia B.V. 2018. All rights reserved
6 / 13
PSMN3R5-30YL
Nexperia
N-channel 30 V 3.5 mΩ logic level MOSFET in LFPAK
003aab271
10-1
003a a c337
3
ID
(A)
10-2
VGS (th)
(V)
min
10-3
typ
max
max
2
typ
10-4
min
1
10-5
10-6
0
1
2
VGS (V)
0
-60
3
Fig. 11. Sub-threshold drain current as a function of
gate-source voltage
0
60
120
Tj (°C)
180
Fig. 12. Gate-source threshold voltage as a function of
junction temperature
03aa27
2
VDS
a
ID
1.5
VGS(pl)
1
VGS(th)
VGS
QGS1
0.5
0
- 60
QGS2
0
60
120
Tj (° C)
QGS
QGD
QG(tot)
003aaa508
Fig. 14. Gate charge waveform definitions
180
Fig. 13. Normalized drain-source on-state resistance
factor as a function of junction temperature
PSMN3R5-30YL
Product data sheet
All information provided in this document is subject to legal disclaimers.
3 August 2018
©
Nexperia B.V. 2018. All rights reserved
7 / 13
PSMN3R5-30YL
Nexperia
N-channel 30 V 3.5 mΩ logic level MOSFET in LFPAK
003aac715
10
VGS
(V)
8
VDS = 12 (V)
6
003aac719
3000
C
(pF)
2500
Ciss
2000
V DS = 19 (V)
Coss
1500
4
1000
Crss
2
0
500
0
10
20
30
40
0
10-1
50
QG (nC)
1
10
VDS (V)
102
Fig. 16. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
Fig. 15. Gate-source voltage as a function of gate
charge; typical values
003aac708
100
IS
(A)
80
60
40
Tj = 150 ° C
20
25 ° C
0
0.0
0.2
0.4
0.6
0.8
1.0
VSD (V)
Fig. 17. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
PSMN3R5-30YL
Product data sheet
All information provided in this document is subject to legal disclaimers.
3 August 2018
©
Nexperia B.V. 2018. All rights reserved
8 / 13
PSMN3R5-30YL
Nexperia
N-channel 30 V 3.5 mΩ logic level MOSFET in LFPAK
11. Package outline
Plastic single-ended surface-mounted package (LFPAK56; Power-SO8); 4 leads
E
A2
A
SOT669
C
c2
b2
E1
b3
L1
mounting
base
b4
D1
D
H
L2
1
2
3
e
4
w
b
A
X
c
1/2 e
A
(A3)
A1
C
q
L
detail X
0
y C
θ
5 mm
8°
scale
0°
Dimensions (mm are the original dimensions)
Unit(1)
A
A1
A2
A3
b
b2
max 1.20 0.15 1.10
0.50 4.41
nom
0.25
min 1.01 0.00 0.95
0.35 3.62
mm
c
c2
D(1) D1(1) E(1) E1(1)
b3
b4
2.2
0.9
0.25 0.30 4.10 4.20
5.0
3.3
2.0
0.7
0.19 0.24 3.80
4.8
3.1
e
1.27
H
L
L1
L2
6.2
0.85
1.3
1.3
5.8
0.40
0.8
0.8
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
Outline
version
SOT669
References
IEC
JEDEC
JEITA
w
y
0.25
0.1
sot669_po
European
projection
Issue date
11-03-25
13-02-27
MO-235
Fig. 18. Package outline LFPAK56; Power-SO8 (SOT669)
PSMN3R5-30YL
Product data sheet
All information provided in this document is subject to legal disclaimers.
3 August 2018
©
Nexperia B.V. 2018. All rights reserved
9 / 13
PSMN3R5-30YL
Nexperia
N-channel 30 V 3.5 mΩ logic level MOSFET in LFPAK
12. Soldering
Footprint information for reflow soldering
SOT669
4.7
4.2
0.9
(3×)
0.25
(2×)
0.25
(2×)
0.6
(4×)
3.45
0.6
(3×)
2
3.5
2.55
0.25
(2×)
SR opening =
Cu + 0.075
1.1
2.15
3.3
SP opening =
Cu - 0.050
0.7
(4×)
1.27
3.81
solder lands
solder paste
125 µm stencil
solder resist
occupied area
Dimensions in mm
sot669_fr
Fig. 19. Reflow soldering footprint for LFPAK56; Power-SO8 (SOT669)
PSMN3R5-30YL
Product data sheet
All information provided in this document is subject to legal disclaimers.
3 August 2018
©
Nexperia B.V. 2018. All rights reserved
10 / 13
PSMN3R5-30YL
Nexperia
N-channel 30 V 3.5 mΩ logic level MOSFET in LFPAK
Wave soldering footprint information for LFPAK56 package
SOT669
4.826
1.78
1.72
2.1
1.4
0.6 (x4)
1.27
0.635
solder lands
Dimensions in mm
Issue date
15-04-13
15-04-16
sot669_fw
Fig. 20. Wave soldering footprint for LFPAK56; Power-SO8 (SOT669)
PSMN3R5-30YL
Product data sheet
All information provided in this document is subject to legal disclaimers.
3 August 2018
©
Nexperia B.V. 2018. All rights reserved
11 / 13
PSMN3R5-30YL
Nexperia
N-channel 30 V 3.5 mΩ logic level MOSFET in LFPAK
13. Legal information
injury, death or severe property or environmental damage. Nexperia and its
suppliers accept no liability for inclusion and/or use of Nexperia products in
such equipment or applications and therefore such inclusion and/or use is at
the customer’s own risk.
Data sheet status
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Document status
[1][2]
Product
status [3]
Definition
Objective [short]
data sheet
Development
This document contains data from
the objective specification for
product development.
Preliminary [short]
data sheet
Qualification
This document contains data from
the preliminary specification.
Product [short]
data sheet
Production
This document contains the product
specification.
[1]
[2]
[3]
Please consult the most recently issued document before initiating or
completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the internet at https://www.nexperia.com.
Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Nexperia does not give any representations or
warranties as to the accuracy or completeness of information included herein
and shall have no liability for the consequences of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the relevant
full data sheet, which is available on request via the local Nexperia sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
Nexperia and its customer, unless Nexperia and customer have explicitly
agreed otherwise in writing. In no event however, shall an agreement be
valid in which the Nexperia product is deemed to offer functions and qualities
beyond those described in the Product data sheet.
Disclaimers
Limited warranty and liability — Information in this document is believed
to be accurate and reliable. However, Nexperia does not give any
representations or warranties, expressed or implied, as to the accuracy
or completeness of such information and shall have no liability for the
consequences of use of such information. Nexperia takes no responsibility
for the content in this document if provided by an information source outside
of Nexperia.
In no event shall Nexperia be liable for any indirect, incidental, punitive,
special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, Nexperia’s aggregate and cumulative liability towards customer
for the products described herein shall be limited in accordance with the
Terms and conditions of commercial sale of Nexperia.
Right to make changes — Nexperia reserves the right to make changes
to information published in this document, including without limitation
specifications and product descriptions, at any time and without notice. This
document supersedes and replaces all information supplied prior to the
publication hereof.
Suitability for use — Nexperia products are not designed, authorized or
warranted to be suitable for use in life support, life-critical or safety-critical
systems or equipment, nor in applications where failure or malfunction
of an Nexperia product can reasonably be expected to result in personal
PSMN3R5-30YL
Product data sheet
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no representation
or warranty that such applications will be suitable for the specified use
without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using Nexperia products, and Nexperia accepts no liability for
any assistance with applications or customer product design. It is customer’s
sole responsibility to determine whether the Nexperia product is suitable
and fit for the customer’s applications and products planned, as well as
for the planned application and use of customer’s third party customer(s).
Customers should provide appropriate design and operating safeguards to
minimize the risks associated with their applications and products.
Nexperia does not accept any liability related to any default, damage, costs
or problem which is based on any weakness or default in the customer’s
applications or products, or the application or use by customer’s third party
customer(s). Customer is responsible for doing all necessary testing for the
customer’s applications and products using Nexperia products in order to
avoid a default of the applications and the products or of the application or
use by customer’s third party customer(s). Nexperia does not accept any
liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — Nexperia products are
sold subject to the general terms and conditions of commercial sale, as
published at http://www.nexperia.com/profile/terms, unless otherwise agreed
in a valid written individual agreement. In case an individual agreement is
concluded only the terms and conditions of the respective agreement shall
apply. Nexperia hereby expressly objects to applying the customer’s general
terms and conditions with regard to the purchase of Nexperia products by
customer.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific Nexperia product is automotive qualified, the
product is not suitable for automotive use. It is neither qualified nor tested in
accordance with automotive testing or application requirements. Nexperia
accepts no liability for inclusion and/or use of non-automotive qualified
products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards,
customer (a) shall use the product without Nexperia’s warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
Nexperia’s specifications such use shall be solely at customer’s own risk,
and (c) customer fully indemnifies Nexperia for any liability, damages or failed
product claims resulting from customer design and use of the product for
automotive applications beyond Nexperia’s standard warranty and Nexperia’s
product specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
All information provided in this document is subject to legal disclaimers.
3 August 2018
©
Nexperia B.V. 2018. All rights reserved
12 / 13
PSMN3R5-30YL
Nexperia
N-channel 30 V 3.5 mΩ logic level MOSFET in LFPAK
Contents
1. General description...................................................... 1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Marking.......................................................................... 2
8. Limiting values............................................................. 2
9. Thermal characteristics............................................... 3
10. Characteristics............................................................ 4
11. Package outline.......................................................... 9
12. Soldering................................................................... 10
13. Legal information......................................................12
©
Nexperia B.V. 2018. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 3 August 2018
PSMN3R5-30YL
Product data sheet
All information provided in this document is subject to legal disclaimers.
3 August 2018
©
Nexperia B.V. 2018. All rights reserved
13 / 13
很抱歉,暂时无法提供与“PSMN3R5-30YL,115”相匹配的价格&库存,您可以联系我们找货
免费人工找货