1N5408-B/P

1N5408-B/P

  • 厂商:

    MDD(辰达半导体)

  • 封装:

    DO-201AD

  • 描述:

    通用硅整流器 DO201AD 1KV 3A 30pF

  • 详情介绍
  • 数据手册
  • 价格&库存
1N5408-B/P 数据手册
1N5400 THRU 1N5408 GENERAL PURPOSE SILICON RECTIFIER Reverse Voltage - 50 to 1000 Volts Forward Current - 3.0 Amperes FEATURES DO-201AD The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 Construction utilizes void-free molded plastic technique Low reverse leakage High forward surge current capability High temperature soldering guaranteed: 250 C/10 seconds,0.375”(9.5mm) lead length, 5 lbs. (2.3kg) tension 1.0 (25.4) MIN. 0.220 (5.6) 0.197(5.0) DIA. 0.375(9.5) 0.285(7.2) MECHANICAL DATA 1.0 (25.4) MIN. 0.052 (1.3) 0.048 (1.2) DIA. Dimensions in inches and (millimeters) Case: JEDEC DO-201AD molded plastic body Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight:0.04 ounce, 1.10 grams MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. MDD Catalog Number Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current 0.375”(9.5mm) lead length at TA=75 C Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Maximum instantaneous forward voltage at 3.0A Maximum DC reverse current TA=25 C at rated DC blocking voltage TA=100 C Typical junction capacitance (NOTE 1) Typical thermal resistance (NOTE 2) Operating junction and storage temperature range SYMBOLS VRRM VRMS VDC 1N 1N 1N 1N 1N 1N 1N 1N 1N 5400 5401 5402 5403 5404 5405 5406 5407 5408 50 35 50 100 200 300 400 500 70 140 210 280 350 100 200 300 400 500 UNITS 600 800 1000 VOLTS 420 560 700 VOLTS 600 800 1000 VOLTS I(AV) 3.0 Amps IFSM 150 Amps VF 1.2 Volts IR 5.0 100 µA CJ RθJA TJ,TSTG 30.0 20.0 -65 to +175 pF C/W C Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C. 2.Thermal resistance from junction to ambient at 0.375”(9.5mm)lead length,P.C.B. mounted FIG. 1- FORWARD CURRENT DERATING CURVE 3.0 2.4 1.8 Single Phase Half Wave 60Hz Resistive or inductive Load 1.2 0.6 0 0 25 50 75 100 125 150 PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD RECTIFIED CURRENT, AMPERES RATINGS AND CHARACTERISTIC CURVES 1N5400 THRU 1N5408 FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 150 120 90 60 30 175 0 8.3ms SINGLE HALF SINE-WAVE (JEDEC Method) 1 10 AMBIENT TEMPERATURE, C 20 10 1 TJ=25 C PULSE WIDTH=300 µs 1%DUTY CYCLE 0.01 0.6 0.8 1.0 1.2 1.4 1.5 FIG. 4-TYPICAL REVERSE CHARACTERISTICS INSTANTANEOUS REVERSE CURRENT, MICROAMPERES INSTANTANEOUS FORWARD CURRENT,AMPERES FIG. 3-TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 0.1 1,000 100 TJ=150 C 10 TJ=100 C 1 0.1 TJ=25 C 0.01 0 INSTANTANEOUS FORWARD VOLTAGE, VOLTS TJ=25 C 10 TRANSIENT THERMAL IMPEDANCE, C/W FIG. 5-TYPICAL JUNCTION CAPACITANCE JUNCTION CAPACITANCE, pF 20 40 60 80 FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE 100 10 1 0.1 0.01 0.1 1 10 1 0.1 1.0 10 REVERSE VOLTAGE,VOLTS 100 PERCENT OF PEAK REVERSE VOLTAGE,% 200 100 100 NUMBER OF CYCLES AT 60 Hz 100 t,PULSE DURATION,sec. The cruve graph is for reference only, can't be the basis for judgment(曲线图仅供参考)! 100
1N5408-B/P
物料型号:1N5400至1N5408 器件简介:这些是通用硅整流器,具有不同的反向电压等级,从50伏到1000伏,前向电流为3.0安培。 引脚分配:文档中未明确列出引脚分配,但通常这类整流器会有阳极和阴极两个引脚。 参数特性:包括最大重复峰值反向电压、最大RMS电压、最大直流阻断电压、最大平均前向整流电流、峰值前向浪涌电流、最大瞬时前向电压、最大直流反向电流等。 功能详解:文档提供了整流器的电气特性曲线图,包括前向电流降额曲线、最大非重复峰值前向浪涌电流、瞬时前向特性、典型反向特性、结电容和瞬态热阻抗等。 应用信息:适用于单相半波60Hz的电阻性或感性负载,对于电容性负载,电流需降额20%。 封装信息:JEDEC DO-201AD塑封体,镀银轴向引线,可按照MIL-STD-750标准进行焊接。
1N5408-B/P 价格&库存

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1N5408-B/P
  •  国内价格
  • 1+0.18128

库存:9