NX138AKSX

NX138AK 60 V, N-channel Tench MOSFET 10 June 2016 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • • • • Low threshold voltage Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection 3. Applications • • • • Relay driver High-speed line driver Low-side loadswitch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 °C - - 60 V VGS gate-source voltage -20 - 20 V ID drain current - - 190 mA - 3 4.5 Ω VGS = 10 V; Tamb = 25 °C [1] Static characteristics RDSon [1] drain-source on-state resistance VGS = 10 V; ID = 190 mA; Tj = 25 °C 2 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 1 cm . NX138AK Nexperia 60 V, N-channel Tench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 S source 3 D drain Simplified outline Graphic symbol 3 D G 1 2 TO-236AB (SOT23) S 017aaa255 6. Ordering information Table 3. Ordering information Type number NX138AK Package Name Description Version TO-236AB plastic surface-mounted package; 3 leads SOT23 7. Marking Table 4. Marking codes Type number Marking code[1] NX138AK AP% [1] % = placeholder for manufacturing site code NX138AK Product data sheet All information provided in this document is subject to legal disclaimers. 10 June 2016 © Nexperia B.V. 2017. All rights reserved 2 / 15 NX138AK Nexperia 60 V, N-channel Tench MOSFET 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj = 25 °C - 60 V VGS gate-source voltage -20 20 V ID drain current VGS = 10 V; Tamb = 25 °C [1] - 190 mA VGS = 10 V; Tamb = 100 °C [1] - 120 mA - 765 mA [2] - 265 mW [1] - 325 mW - 1.33 W IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs Ptot total power dissipation Tamb = 25 °C Tsp = 25 °C Tj junction temperature -55 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C - 190 mA Source-drain diode IS [1] [2] source current Tamb = 25 °C [1] 2 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 1 cm . Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 017aaa123 120 017aaa124 120 Pder (%) Ider (%) 80 80 40 40 0 - 75 - 25 25 75 125 Tj (°C) 0 - 75 175 Fig. 1. Normalized total power dissipation as a function of junction temperature NX138AK Product data sheet - 25 25 75 125 Tj (°C) 175 Fig. 2. Normalized continuous drain current as a function of junction temperature All information provided in this document is subject to legal disclaimers. 10 June 2016 © Nexperia B.V. 2017. All rights reserved 3 / 15 NX138AK Nexperia 60 V, N-channel Tench MOSFET aaa-023297 1 tp = 10 µs ID (A) Limit RDSon = VDS/ID 100 µs 10-1 1 ms 10-2 10-3 10-1 DC; Tsp = 25 °C 10 ms DC; Tamb = 25 °C; drain mounting pad 1 cm2 100 ms 1 10 102 VDS (V) IDM = single pulse Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source voltage 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient in free air Rth(j-sp) [1] [2] thermal resistance from junction to solder point Min Typ Max Unit [1] - 410 470 K/W [2] - 330 380 K/W - 80 95 K/W Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm . NX138AK Product data sheet All information provided in this document is subject to legal disclaimers. 10 June 2016 © Nexperia B.V. 2017. All rights reserved 4 / 15 NX138AK Nexperia 60 V, N-channel Tench MOSFET aaa-023298 103 Zth(j-a) (K/W) duty cycle = 1 0.75 0.50 0.33 102 0.20 0.25 0.10 0.05 0.02 0.01 0 10 10-3 10-2 10-1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values aaa-023299 103 Zth(j-a) (K/W) duty cycle = 1 0.75 0.50 102 0.33 0.20 0.25 0.10 0.05 0.02 0.01 0 10 10-3 10-2 10-1 FR4 PCB, mounting pad for drain 1 cm 1 10 102 tp (s) 2 103 Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values NX138AK Product data sheet All information provided in this document is subject to legal disclaimers. 10 June 2016 © Nexperia B.V. 2017. All rights reserved 5 / 15 NX138AK Nexperia 60 V, N-channel Tench MOSFET 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C 60 - - V VGSth gate-source threshold voltage ID = 250 µA; VDS=VGS; Tj = 25 °C 0.8 1.1 1.5 V IDSS drain leakage current VDS = 60 V; VGS = 0 V; Tj = 25 °C - - 1 µA IGSS gate leakage current VGS = 20 V; VDS = 0 V; Tj = 25 °C - - 2 µA VGS = -20 V; VDS = 0 V; Tj = 25 °C - - -2 µA VGS = 10 V; VDS = 0 V; Tj = 25 °C - - 0.5 µA VGS = -10 V; VDS = 0 V; Tj = 25 °C - - -0.5 µA VGS = 5 V; VDS = 0 V; Tj = 25 °C - - 100 nA VGS = -5 V; VDS = 0 V; Tj = 25 °C - - -100 nA VGS = 10 V; ID = 190 mA; Tj = 25 °C - 3 4.5 Ω VGS = 10 V; ID = 190 mA; Tj = 150 °C - 6 9 Ω VGS = 5 V; ID = 170 mA; Tj = 25 °C - 4 5.2 Ω VGS = 2.5 V; ID = 130 mA; Tj = 25 °C - 5 10 Ω VDS = 10 V; ID = 180 mA; Tj = 25 °C - 3.5 - S VDS = 30 V; ID = 190 mA; VGS = 10 V; Tj = 25 °C - 0.9 1.4 nC - 0.1 - nC - 0.2 - nC - 15 20 pF - 2.3 - pF - 1.5 - pF - 8 12 ns - 10 - ns RDSon gfs drain-source on-state resistance forward transconductance Dynamic characteristics QG(tot) total gate charge QGS gate-source charge QGD gate-drain charge Ciss input capacitance Coss output capacitance Crss reverse transfer capacitance td(on) turn-on delay time tr rise time td(off) turn-off delay time - 8 20 ns tf fall time - 5 - ns - 0.8 1.2 V VDS = 30 V; f = 1 MHz; VGS = 0 V; Tj = 25 °C VDS = 30 V; ID = 190 mA; VGS = 10 V; RG(ext) = 75 Ω; Tj = 25 °C Source-drain diode VSD source-drain voltage NX138AK Product data sheet IS = 190 mA; VGS = 0 V; Tj = 25 °C All information provided in this document is subject to legal disclaimers. 10 June 2016 © Nexperia B.V. 2017. All rights reserved 6 / 15 NX138AK Nexperia 60 V, N-channel Tench MOSFET aaa-023300 0.8 ID (A) ID (A) 3.5 V 0.6 3.0 V 0.4 aaa-023301 10-3 10 V 4.5 V min 10-4 typ max 2.6 V 10-5 0.2 0 VGS = 2.2 V 0 1 2 3 VDS (V) 10-6 4 Tj = 25 °C 1 1.5 VGS (V) 2 Fig. 7. Sub-threshold drain current as a function of gatesource voltage aaa-023302 2.6 V 0.5 VDS = 5 V Tj = 25 °C Fig. 6. Output characteristics: drain current as a function of drain-source voltage; typical values 7 RDSon (Ω) 6 0 aaa-023303 8 RDSon (Ω) 7 3.0 V 6 5 Tj = 150 °C 5 4 4 3 3.2 V 3.5 V 4.5 V VGS = 10 V 2 3 2 1 0 Tj = 25 °C 1 0 0.2 0.4 0.6 ID (A) 0 0.8 Tj = 25 °C Product data sheet 5 10 15 VGS (V) 20 ID = 190 mA Fig. 8. Drain-source on-state resistance as a function of drain current; typical values NX138AK 0 Fig. 9. Drain-source on-state resistance as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. 10 June 2016 © Nexperia B.V. 2017. All rights reserved 7 / 15 NX138AK Nexperia 60 V, N-channel Tench MOSFET aaa-023304 0.4 aaa-023305 2.5 a ID (A) 2 1.5 0.2 1 Tj = 150 °C Tj = 25 °C 0.5 0 0 1 2 3 VGS (V) 0 -60 4 0 60 120 Tj (°C) 180 VDS > ID x RDSon Fig. 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values Fig. 11. Normalized drain-source on-state resistance as a function of junction temperature; typical values aaa-023306 2 VGS(th) (V) C (pF) max 1.5 aaa-023307 102 Ciss typ 1 10 min 0.5 Coss Crss 0 -60 0 60 120 Tj (°C) 1 10-1 180 ID = 250 μA; VDS = VGS Product data sheet 10 VDS (V) 102 f = 1 MHz; VGS = 0 V Fig. 12. Gate-source threshold voltage as a function of junction temperature NX138AK 1 Fig. 13. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. 10 June 2016 © Nexperia B.V. 2017. All rights reserved 8 / 15 NX138AK Nexperia 60 V, N-channel Tench MOSFET aaa-023308 10 VDS VGS (V) ID 8 VGS(pl) 6 VGS(th) VGS 4 QGS1 2 0 QGS2 0 0.2 0.4 0.6 QGS QGD QG(tot) 003aaa508 Fig. 15. MOSFET transistor: Gate charge waveform definitions 0.8 1 QG (nC) VDS = 30 V; ID = 0.9 A Fig. 14. Gate-source voltage as a function of gate charge; typical values aaa-023309 0.2 IS (A) 0.1 Tj = 150 ºC 0 0 0.4 Tj = 25 ºC 0.8 VSD (V) 1.2 VGS = 0 V Fig. 16. Source current as a function of source-drain voltage; typical values 11. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig. 17. Duty cycle definition NX138AK Product data sheet All information provided in this document is subject to legal disclaimers. 10 June 2016 © Nexperia B.V. 2017. All rights reserved 9 / 15 NX138AK Nexperia 60 V, N-channel Tench MOSFET 12. Package outline Plastic surface-mounted package; 3 leads SOT23 B D A E X HE v A 3 Q A A1 1 c 2 e1 bp w B Lp e detail X 0 1 2 mm scale Dimensions (mm are the original dimensions) Unit mm max nom min A A1 1.1 0.1 0.9 D E 0.48 0.15 bp c 3.0 1.4 0.38 0.09 2.8 1.2 e e1 1.9 0.95 HE Lp Q 2.5 0.45 0.55 2.1 0.15 0.45 v w 0.2 0.1 sot023_po Outline version SOT23 References IEC JEDEC JEITA European projection Issue date 14-06-19 14-09-22 TO-236AB Fig. 18. Package outline TO-236AB (SOT23) NX138AK Product data sheet All information provided in this document is subject to legal disclaimers. 10 June 2016 © Nexperia B.V. 2017. All rights reserved 10 / 15 NX138AK Nexperia 60 V, N-channel Tench MOSFET 13. Soldering 3.3 2.9 1.9 solder lands 3 solder resist 2 1.7 solder paste occupied area 0.6 (3×) 0.7 (3×) Dimensions in mm 0.5 (3×) 0.6 (3×) 1 sot023_fr Fig. 19. Reflow soldering footprint for TO-236AB (SOT23) 2.2 1.2 (2×) 1.4 (2×) solder lands 4.6 solder resist 2.6 occupied area Dimensions in mm 1.4 preferred transport direction during soldering 2.8 4.5 sot023_fw Fig. 20. Wave soldering footprint for TO-236AB (SOT23) NX138AK Product data sheet All information provided in this document is subject to legal disclaimers. 10 June 2016 © Nexperia B.V. 2017. All rights reserved 11 / 15 NX138AK Nexperia 60 V, N-channel Tench MOSFET 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes NX138AK v.2 20160610 Product data sheet - NX138AK v.1 Modifications: NX138AK v.1 NX138AK Product data sheet • Title changed for figures 11 and 12 to juction temperature 20160607 Product data sheet - All information provided in this document is subject to legal disclaimers. 10 June 2016 - © Nexperia B.V. 2017. All rights reserved 12 / 15 NX138AK Nexperia 60 V, N-channel Tench MOSFET Notwithstanding any damages that customer might incur for any reason whatsoever, Nexperia’s aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of Nexperia. 15. Legal information Right to make changes — Nexperia reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Data sheet status Document status [1][2] Product status [3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. 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Nexperia accepts no liability for inclusion and/or use of nonautomotive qualified products in automotive equipment or applications. All information provided in this document is subject to legal disclaimers. 10 June 2016 © Nexperia B.V. 2017. All rights reserved 13 / 15 NX138AK Nexperia 60 V, N-channel Tench MOSFET In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without Nexperia’s warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond Nexperia’s specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies Nexperia for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond Nexperia’s standard warranty and Nexperia’s product specifications. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. NX138AK Product data sheet All information provided in this document is subject to legal disclaimers. 10 June 2016 © Nexperia B.V. 2017. All rights reserved 14 / 15 NX138AK Nexperia 60 V, N-channel Tench MOSFET 16. Contents 1. General description......................................................1 2. Features and benefits.................................................. 1 3. Applications.................................................................. 1 4. Quick reference data....................................................1 5. Pinning information......................................................2 6. Ordering information....................................................2 7. Marking.......................................................................... 2 8. Limiting values............................................................. 3 9. Thermal characteristics............................................... 4 10. Characteristics............................................................ 6 11. Test information......................................................... 9 12. Package outline........................................................ 10 13. Soldering................................................................... 11 14. Revision history........................................................12 15. Legal information..................................................... 13 © Nexperia B.V. 2017. All rights reserved For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 10 June 2016 NX138AK Product data sheet All information provided in this document is subject to legal disclaimers. 10 June 2016 © Nexperia B.V. 2017. All rights reserved 15 / 15