PMV100XPEAR

PMV100XPEA 20 V, P-channel Trench MOSFET 15 June 2017 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • • • • • Low threshold voltage Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM AEC-Q101 qualified 3. Applications • • • • Relay driver High-speed line driver High-side loadswitch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 °C - - -20 V VGS gate-source voltage -12 - 12 V ID drain current - - -2.4 A - 97 128 mΩ VGS = -4.5 V; Tamb = 25 °C [1] Static characteristics RDSon [1] drain-source on-state resistance VGS = -4.5 V; ID = -2.4 A; Tj = 25 °C 2 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm . PMV100XPEA Nexperia 20 V, P-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 S source 3 D drain Simplified outline Graphic symbol 3 D G 1 2 TO-236AB (SOT23) S 017aaa259 6. Ordering information Table 3. Ordering information Type number PMV100XPEA Package Name Description Version TO-236AB plastic surface-mounted package; 3 leads SOT23 7. Marking Table 4. Marking codes Type number Marking code[1] PMV100XPEA DP% [1] % = placeholder for manufacturing site code PMV100XPEA Product data sheet All information provided in this document is subject to legal disclaimers. 15 June 2017 © Nexperia B.V. 2017. All rights reserved 2 / 15 PMV100XPEA Nexperia 20 V, P-channel Trench MOSFET 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj = 25 °C - -20 V VGS gate-source voltage -12 12 V ID drain current VGS = -4.5 V; Tamb = 25 °C [1] - -2.4 A VGS = -4.5 V; Tamb = 100 °C [1] - -1.5 A IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs - -10 A EDS(AL)S non-repetitive drainsource avalanche energy Tj(init) = 25 °C; ID = -0.5 A; DUT in avalanche (unclamped) - 5 mJ Ptot total power dissipation Tamb = 25 °C [2] - 463 mW [1] - 1.06 W - 4.45 W Tsp = 25 °C Tj junction temperature -55 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C Source-drain diode IS source current Tamb = 25 °C [1] - -1 A HBM [3] - 2000 V ESD maximum rating VESD [1] [2] [3] electrostatic discharge voltage 2 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm . Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Measured between all pins. PMV100XPEA Product data sheet All information provided in this document is subject to legal disclaimers. 15 June 2017 © Nexperia B.V. 2017. All rights reserved 3 / 15 PMV100XPEA Nexperia 20 V, P-channel Trench MOSFET 017aaa123 120 017aaa124 120 Pder (%) Ider (%) 80 80 40 40 0 - 75 Fig. 1. - 25 25 75 125 Tj (°C) 0 - 75 175 Fig. 2. Normalized total power dissipation as a function of junction temperature - 25 25 75 125 Tj (°C) 175 Normalized continuous drain current as a function of junction temperature aaa-023386 -102 ID (A) Limit RDSon = VDS/ID -10 tp = 10 µs tp = 100 µs -1 tp = 1 ms tp = 10 ms DC; Tamb = 25 °C; drain mounting pad 6 cm2 -10-1 tp = 100 ms DC; Tsp = 25 °C -10-2 -10-1 -1 -10 -102 VDS (V) IDM = single pulse Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage PMV100XPEA Product data sheet All information provided in this document is subject to legal disclaimers. 15 June 2017 © Nexperia B.V. 2017. All rights reserved 4 / 15 PMV100XPEA Nexperia 20 V, P-channel Trench MOSFET 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient in free air Rth(j-sp) [1] [2] Min Typ Max Unit [1] - 226 270 K/W [2] - 98 118 K/W - 20 28 K/W thermal resistance from junction to solder point Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm . aaa-023387 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.50 0.25 0.10 10 0.75 0.33 0.20 0.05 0.02 0.01 0 1 10-3 10-2 10-1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values aaa-023388 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.50 0.75 0.25 0.33 0.20 0.10 0.05 10 0 0.01 0.02 1 10-3 10-2 10-1 FR4 PCB, mounting pad for drain 6 cm Fig. 5. 1 10 102 tp (s) 2 103 Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMV100XPEA Product data sheet All information provided in this document is subject to legal disclaimers. 15 June 2017 © Nexperia B.V. 2017. All rights reserved 5 / 15 PMV100XPEA Nexperia 20 V, P-channel Trench MOSFET 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = -250 µA; VGS = 0 V; Tj = 25 °C -20 - - V VGSth gate-source threshold voltage ID = -250 µA; VDS=VGS; Tj = 25 °C -0.75 -1 -1.25 V IDSS drain leakage current VDS = -20 V; VGS = 0 V; Tj = 25 °C - - -1 µA IGSS gate leakage current VGS = 12 V; VDS = 0 V; Tj = 25 °C - - 10 µA VGS = -12 V; VDS = 0 V; Tj = 25 °C - - -10 µA VGS = 4.5 V; VDS = 0 V; Tj = 25 °C - - 2 µA VGS = -4.5 V; VDS = 0 V; Tj = 25 °C - - -2 µA VGS = -4.5 V; ID = -2.4 A; Tj = 25 °C - 97 128 mΩ VGS = -4.5 V; ID = -2.4 A; Tj = 150 °C - 142 187 mΩ VGS = -2.5 V; ID = -1.9 A; Tj = 25 °C - 147 210 mΩ RDSon drain-source on-state resistance gfs forward transconductance VDS = -10 V; ID = -2.4 A; Tj = 25 °C - 6 - S RG gate resistance f = 1 MHz - 17.4 - Ω VDS = -10 V; ID = -2.4 A; VGS = -4.5 V; Tj = 25 °C - 3.4 6 nC - 0.85 - nC - 0.75 - nC - 386 - pF - 54 - pF - 40 - pF - 5 - ns - 4 - ns Dynamic characteristics QG(tot) total gate charge QGS gate-source charge QGD gate-drain charge Ciss input capacitance Coss output capacitance Crss reverse transfer capacitance td(on) turn-on delay time tr rise time td(off) turn-off delay time - 35 - ns tf fall time - 17 - ns - -0.7 -1.2 V VDS = -10 V; f = 1 MHz; VGS = 0 V; Tj = 25 °C VDS = -10 V; ID = -2.4 A; VGS = -4.5 V; RG(ext) = 6 Ω; Tj = 25 °C Source-drain diode VSD source-drain voltage PMV100XPEA Product data sheet IS = -1 A; VGS = 0 V; Tj = 25 °C All information provided in this document is subject to legal disclaimers. 15 June 2017 © Nexperia B.V. 2017. All rights reserved 6 / 15 PMV100XPEA Nexperia 20 V, P-channel Trench MOSFET aaa-023389 -10 ID (A) -4.5 V -4.0 V -3.0 V ID (A) -2.8 V -8 aaa-023390 -10-3 min -10-4 -6 -2.5 V -4 -2.2 V typ max -10-5 -2 0 VGS = -1.8 V 0 -1 -2 -3 -4 VDS (V) -10-6 -5 Tj = 25 °C Fig. 6. aaa-023391 -1.8 V RDSon (mΩ) -2.2 V -1.0 VGS (V) -1.5 Sub-threshold drain current as a function of gate-source voltage aaa-023392 400 -2.5 V RDSon (mΩ) -2.8 V 300 -0.5 VDS = -5 V Tj = 25 °C Output characteristics: drain current as a function of drain-source voltage; typical values Fig. 7. 400 0 300 -3.0 V 200 200 Tj = 150 °C VGS = -4.5 V 100 100 Tj = 25 °C 0 0 -2 -4 -6 -8 ID (A) 0 -10 Tj = 25 °C Fig. 8. Product data sheet -4 -8 VGS (V) -12 ID = -2.2 A Drain-source on-state resistance as a function of drain current; typical values PMV100XPEA 0 Fig. 9. Drain-source on-state resistance as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. 15 June 2017 © Nexperia B.V. 2017. All rights reserved 7 / 15 PMV100XPEA Nexperia 20 V, P-channel Trench MOSFET aaa-023393 -10 aaa-023394 2.0 ID (A) a -8 1.5 -6 1.0 -4 0.5 -2 0 Tj = 150 °C Tj = 25 °C 0 -1 -2 -3 VGS (V) 0 -60 -4 0 60 120 Tj (°C) 180 VDS > ID x RDSon Fig. 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values Fig. 11. Normalized drain-source on-state resistance as a function of junction temperature; typical values aaa-023395 -2.0 aaa-023396 103 VGS(th) (V) C (pF) Ciss -1.5 102 max Coss Crss typ -1.0 min 10 -0.5 0 -60 0 60 120 Tj (°C) 1 -10-1 180 ID = - 250 μA; VDS = VGS Product data sheet -10 VDS (V) -102 f = 1 MHz; VGS = 0 V Fig. 12. Gate-source threshold voltage as a function of junction temperature PMV100XPEA -1 Fig. 13. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. 15 June 2017 © Nexperia B.V. 2017. All rights reserved 8 / 15 PMV100XPEA Nexperia 20 V, P-channel Trench MOSFET aaa-023397 -5 VDS VGS (V) ID -4 VGS(pl) -3 VGS(th) VGS -2 QGS1 -1 0 QGS2 0 1 2 3 QG (nC) QGS QGD QG(tot) 003aaa508 Fig. 15. Gate charge waveform definitions 4 VDS = -10 V; ID = -2.38 A Fig. 14. Gate-source voltage as a function of gate charge; typical values aaa-023959 -3.5 IS (A) -3.0 -2.5 Tj = 150 °C -2.0 -1.5 -1.0 Tj = 25 °C -0.5 0 0 -0.4 -0.8 VSD (V) -1.2 VGS = 0 V Fig. 16. Source current as a function of source-drain voltage; typical values PMV100XPEA Product data sheet All information provided in this document is subject to legal disclaimers. 15 June 2017 © Nexperia B.V. 2017. All rights reserved 9 / 15 PMV100XPEA Nexperia 20 V, P-channel Trench MOSFET 11. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig. 17. Duty cycle definition Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. PMV100XPEA Product data sheet All information provided in this document is subject to legal disclaimers. 15 June 2017 © Nexperia B.V. 2017. All rights reserved 10 / 15 PMV100XPEA Nexperia 20 V, P-channel Trench MOSFET 12. Package outline Plastic surface-mounted package; 3 leads SOT23 B D A E X HE v A 3 Q A A1 1 c 2 e1 bp w B Lp e detail X 0 1 2 mm scale Dimensions (mm are the original dimensions) Unit max nom min mm A A1 1.1 0.1 0.9 D E 0.48 0.15 bp c 3.0 1.4 0.38 0.09 2.8 1.2 e e1 1.9 0.95 HE Lp Q 2.5 0.45 0.55 2.1 0.15 0.45 v w 0.2 0.1 sot023_po Outline version SOT23 References IEC JEDEC JEITA European projection Issue date 14-06-19 14-09-22 TO-236AB Fig. 18. Package outline TO-236AB (SOT23) PMV100XPEA Product data sheet All information provided in this document is subject to legal disclaimers. 15 June 2017 © Nexperia B.V. 2017. All rights reserved 11 / 15 PMV100XPEA Nexperia 20 V, P-channel Trench MOSFET 13. Soldering 3.3 2.9 1.9 solder lands 3 solder resist 2 1.7 solder paste occupied area 0.6 (3×) 0.7 (3×) Dimensions in mm 0.5 (3×) 0.6 (3×) 1 sot023_fr Fig. 19. Reflow soldering footprint for TO-236AB (SOT23) 2.2 1.2 (2×) 1.4 (2×) solder lands 4.6 solder resist 2.6 occupied area Dimensions in mm 1.4 preferred transport direction during soldering 2.8 4.5 sot023_fw Fig. 20. Wave soldering footprint for TO-236AB (SOT23) PMV100XPEA Product data sheet All information provided in this document is subject to legal disclaimers. 15 June 2017 © Nexperia B.V. 2017. All rights reserved 12 / 15 PMV100XPEA Nexperia 20 V, P-channel Trench MOSFET 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PMV100XPEA v.2 20170615 Product data sheet - PMV100XPEA v.1 - - Modification: PMV100XPEA v.1 PMV100XPEA Product data sheet • Figure 1 removed 20160630 All information provided in this document is subject to legal disclaimers. 15 June 2017 © Nexperia B.V. 2017. All rights reserved 13 / 15 PMV100XPEA Nexperia 20 V, P-channel Trench MOSFET for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of Nexperia. 15. Legal information Right to make changes — Nexperia reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Data sheet status Document status [1][2] Product status [3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] [2] [3] Suitability for use in automotive applications — This Nexperia product has been qualified for use in automotive applications. Unless otherwise agreed in writing, the product is not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an Nexperia product can reasonably be expected to result in personal injury, death or severe property or environmental damage. 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Notwithstanding any damages that customer might incur for any reason whatsoever, Nexperia’ aggregate and cumulative liability towards customer Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. PMV100XPEA Product data sheet Trademarks All information provided in this document is subject to legal disclaimers. 15 June 2017 © Nexperia B.V. 2017. All rights reserved 14 / 15 PMV100XPEA Nexperia 20 V, P-channel Trench MOSFET 16. Contents 1. General description......................................................1 2. Features and benefits.................................................. 1 3. Applications.................................................................. 1 4. Quick reference data....................................................1 5. Pinning information......................................................2 6. Ordering information....................................................2 7. Marking.......................................................................... 2 8. Limiting values............................................................. 3 9. Thermal characteristics............................................... 5 10. Characteristics............................................................ 6 11. Test information....................................................... 10 12. Package outline........................................................ 11 13. Soldering................................................................... 12 14. Revision history........................................................13 15. Legal information..................................................... 14 © Nexperia B.V. 2017. All rights reserved For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 15 June 2017 PMV100XPEA Product data sheet All information provided in this document is subject to legal disclaimers. 15 June 2017 © Nexperia B.V. 2017. All rights reserved 15 / 15