BUK7Y13-40B,115

BUK7Y13-40B N-channel TrenchMOS standard level FET Rev. 03 — 26 May 2008 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits „ 175 °C rated „ Suitable for standard level gate drive sources „ Q101 compliant „ Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications „ 12 V loads „ Automotive ABS systems „ Fuel pump and injection „ Air bag „ Automotive transmission control „ Motors, lamps and solenoids 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - - 40 V ID drain current VGS = 10 V; Tmb = 25 °C; see Figure 1 and 4 - - 58 A Ptot total power dissipation Tmb = 25 °C; see Figure 2 - - 85 W ID = 10 A; VDS = 32 V; VGS = 10 V; see Figure 14 - 5 - nC VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 13 and 12 - 11 13 mΩ ID = 58 A; Vsup ≤ 40 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped - - 85 mJ Dynamic characteristics QGD gate-drain charge Static characteristics RDSon drain-source on-state resistance Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy BUK7Y13-40B Nexperia N-channel TrenchMOS standard level FET 2. Pinning information Table 2. Pinning Pin Symbol Description 1, 2, 3 S source 4 G gate mb D mounting base; connected to drain Simplified outline Graphic symbol D mb G mbb076 S 1 2 3 4 SOT669 (LFPAK) 3. Ordering information Table 3. Ordering information Type number BUK7Y13-40B Package Name Description Version LFPAK plastic single-ended surface-mounted package (LFPAK); 4 leads SOT669 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - 40 V VDGR drain-gate voltage RGS = 20 kΩ - 40 V VGS gate-source voltage 20 20 V ID drain current Tmb = 25 °C; VGS = 10 V; see Figure 1 and 4 - 58 A Tmb = 175 °C; VGS = 10 V; see Figure 1 - 41 A IDM peak drain current Tmb = 25 °C; tp ≤ 10 μs; pulsed; see Figure 4 - 234 A Ptot total power dissipation Tmb = 25 °C; see Figure 2 - 85 W Tstg storage temperature -55 175 °C Tj junction temperature -55 175 °C - 85 mJ - - J Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy ID = 58 A; Vsup ≤ 40 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped EDS(AL)R repetitive drain-source avalanche energy see Figure 3 [1][2] [3] Source-drain diode IS source current Tmb = 25 °C - 58 A ISM peak source current tp ≤ 10 μs; pulsed; Tmb = 25 °C - 234 A [1] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C. [2] Repetitive avalanche rating limited by an average junction temperature of 170 °C. [3] Refer to application note AN10273 for further information. © BUK7Y13-40B_3 Product data sheet Rev. 03 — 26 May 2008 Nexperia B.V. 2017. All rights reserved 2 of 12 BUK7Y13-40B Nexperia N-channel TrenchMOS standard level FET 003aab217 60 03na19 120 ID (A) Pder (%) 40 80 20 40 0 0 0 50 100 150 Tmb (°C) 0 200 50 100 150 200 Tmb (°C) VGS • 10V P der = Fig 1. Continuous drain current as a function of mounting base temperature P tot P tot (25°C ) × 100 % Fig 2. Normalized total power dissipation as a function of mounting base temperature 003aab220 102 (1) IAL (A) 10 (2) (3) 1 10-1 10-3 10-2 10-1 1 t (ms) 10 AL (1) Singleípulse;T j = 25 °C. (2) Singleípulse;T j = 150 °C. (3) Repetitive. Fig 3. Single-shot and repetitive avalanche rating; avalanche current as a function of avalanche period © BUK7Y13-40B_3 Product data sheet Rev. 03 — 26 May 2008 Nexperia B.V. 2017. All rights reserved 3 of 12 BUK7Y13-40B Nexperia N-channel TrenchMOS standard level FET 003aab218 103 Limit RDSon = VDS / ID ID (A) 102 tp = 10 μs 100 μs 10 1 ms DC 10 ms 1 100 ms 10−1 1 102 10 VDS (V) Tmb = 25 °C; IDM is single pulse Fig 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance from junction to mounting base see Figure 5 - - 1.8 K/W 03nm01 10 Zth (j-mb) (K/W) 1 δ = 0.5 0.2 0.1 10-1 δ= P 0.05 tp T 0.02 t tp 10-2 10-6 T single shot 10-5 10-4 10-3 10-2 10-1 tp (s) 1 Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse duration © BUK7Y13-40B_3 Product data sheet Rev. 03 — 26 May 2008 Nexperia B.V. 2017. All rights reserved 4 of 12 BUK7Y13-40B Nexperia N-channel TrenchMOS standard level FET 6. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit ID = 250 μA; VGS = 0 V; Tj = 25 °C 40 - - V ID = 250 μA; VGS = 0 V; Tj = -55 °C 36 - - V 2 3 4 V ID = 1 mA; VDS = VGS; Tj = -55 °C; see Figure 10 - - 4.4 V ID = 1 mA; VDS = VGS; Tj = 175 °C; see Figure 10 1 - - V μA Static characteristics V(BR)DSS VGS(th) drain-source breakdown voltage gate-source threshold ID = 1 mA; VDS = VGS; Tj = 25 °C; voltage see Figure 10 and 11 IDSS drain leakage current VDS = 40 V; VGS = 0 V; Tj = 175 °C - - 500 VDS = 40 V; VGS = 0 V; Tj = 25 °C - 0.02 1 μA IGSS gate leakage current VDS = 0 V; VGS = 20 V; Tj = 25 °C - 2 100 nA VDS = 0 V; VGS = -20 V; Tj = 25 °C - 2 100 nA VGS = 10 V; ID = 25 A; Tj = 175 °C; see Figure 12 - - 25 mΩ VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 13 and 12 - 11 13 mΩ IS = 25 A; VGS = 25 V; Tj = 25 °C; see Figure 16 - 0.85 1.2 V - 41 - ns - 22 - nC - 19 - nC - 6 - nC - 5 - nC - 983 1311 pF - 280 336 pF - 138 189 pF - 9 - ns - 25 - ns RDSon drain-source on-state resistance Source-drain diode VSD source-drain voltage trr reverse recovery time IS = 20 A; dIS/dt = 100 A/μs; VGS = 0 V; VDS = 30 V recovered charge Qr Dynamic characteristics QG(tot) total gate charge ID = 10 A; VDS = 32 V; VGS = 10 V; see Figure 14 QGS gate-source charge QGD gate-drain charge Ciss input capacitance Coss output capacitance Crss reverse transfer capacitance td(on) turn-on delay time tr rise time td(off) turn-off delay time - 35 - ns tf fall time - 27 - ns VGS = 0 V; VDS = 25 V; f = 1 MHz; Tj = 25 °C; see Figure 15 VDS = 30 V; RL = 2.5 Ω; VGS = 10 V; RG(ext) = 10 Ω © BUK7Y13-40B_3 Product data sheet Rev. 03 — 26 May 2008 Nexperia B.V. 2017. All rights reserved 5 of 12 BUK7Y13-40B Nexperia N-channel TrenchMOS standard level FET 003aab394 160 ID (A) 20 10 9.5 RDSon (mΩ) 9 8.5 120 003aab395 20 8 15 7.5 80 7 6.5 10 6 40 5.5 5 VGS (V) = 4.5 5 0 0 2 2 6 8 4 10 VDS (V) 8 12 16 20 VGS (V) T j = 25 °C T j = 25 °C; ID = 25 A Fig 6. Output characteristics: drain current as a function of drain-source voltage; typical values 003aab400 50 Fig 7. Drain-source on-state resistance as a function of gate-source voltage; typical values 003aab401 70 ID (A) gfs (S) 40 60 30 50 20 Tj = 175 °C 40 10 Tj = 25 °C 30 0 0 2 4 6 5 10 15 20 25 VDS = 25V T j = 25 °C;VDS = 25V Fig 8. Transfer characteristics: drain current as a function of gate-source voltage; typical values Fig 9. Forward transconductance as a function of drain current; typical values © BUK7Y13-40B_3 Product data sheet 30 ID (A) VGS (V) Rev. 03 — 26 May 2008 Nexperia B.V. 2017. All rights reserved 6 of 12 BUK7Y13-40B Nexperia N-channel TrenchMOS standard level FET 03aa32 5 03aa35 10−1 ID (A) VGS(th) (V) 4 max 10−2 typ 10−3 min 10−4 3 2 min typ max 10−5 1 0 −60 0 60 120 180 10−6 0 Tj (°C) 2 4 6 VGS (V) ID = 1 m A;VDS = VGS T j = 25 °C;VDS = VGS Fig 10. Gate-source threshold voltage as a function of junction temperature 003aab851 2 Fig 11. Sub-threshold drain current as a function of gate-source voltage 003aab396 30 VGS (V) = 6 a 7 8 RDSon (mΩ) 1.5 20 10 1 20 10 0.5 0 −60 a= 0 60 120 180 Tj (°C) 0 0 80 120 160 ID (A) R DSon T j = 25 °C R DSon (25°C ) Fig 12. Normalized drain-source on-state resistance factor as a function of junction temperature Fig 13. Drain-source on-state resistance as a function of drain current; typical values © BUK7Y13-40B_3 Product data sheet 40 Rev. 03 — 26 May 2008 Nexperia B.V. 2017. All rights reserved 7 of 12 BUK7Y13-40B Nexperia N-channel TrenchMOS standard level FET 003aab399 10 003aab397 1600 VGS (V) C (pF) Ciss 8 VDS = 14 V 1200 VDS = 32 V 6 Coss 800 4 400 Crss 2 0 0 8 16 0 10−1 24 1 102 10 QG (nC) VDS (V) T j = 25 °C; ID = 10 A VGS = 0V ; f = 1 M H z Fig 14. Gate-source voltage as a function of gate charge; typical values Fig 15. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values 003aab398 60 Is (A) 40 Tj = 175 °C 20 Tj = 25 °C 0 0 0.2 0.4 0.6 0.8 1.0 VSD (V) VGS = 0V Fig 16. Source current as a function of source-drain voltage; typical values © BUK7Y13-40B_3 Product data sheet Rev. 03 — 26 May 2008 Nexperia B.V. 2017. All rights reserved 8 of 12 BUK7Y13-40B Nexperia N-channel TrenchMOS standard level FET 7. Package outline Plastic single-ended surface-mounted package (LFPAK); 4 leads A2 A E SOT669 C c2 b2 E1 b3 L1 mounting base b4 D1 D H L2 1 2 3 e 4 w M A b 1/2 X c e A (A 3) A1 C θ L detail X y C 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 A2 A3 b b2 1.20 0.15 1.10 0.50 4.41 0.25 1.01 0.00 0.95 0.35 3.62 mm b3 b4 2.2 2.0 0.9 0.7 c D (1) c2 D1(1) E(1) E1(1) max 0.25 0.30 4.10 4.20 0.19 0.24 3.80 5.0 4.8 3.3 3.1 e H L L1 L2 w y θ 1.27 6.2 5.8 0.85 0.40 1.3 0.8 1.3 0.8 0.25 0.1 8° 0° Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. OUTLINE VERSION SOT669 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 04-10-13 06-03-16 MO-235 Fig 17. Package outline SOT669 (LFPAK) © BUK7Y13-40B_3 Product data sheet Rev. 03 — 26 May 2008 Nexperia B.V. 2017. All rights reserved 9 of 12 BUK7Y13-40B Nexperia N-channel TrenchMOS standard level FET 8. Revision history Table 7. Revision history Document ID Release date Data sheet status Change notice Supersedes BUK7Y13-40B_3 20080526 Product data sheet - BUK7Y13-40B_2 Modifications: • Table 5, maximum thermal resistance value updated BUK7Y13-40B_2 20071002 Product data sheet - BUK7Y13-40B_1 BUK7Y13-40B_1 20070924 Product data sheet - - © BUK7Y13-40B_3 Product data sheet Rev. 03 — 26 May 2008 Nexperia B.V. 2017. All rights reserved 10 of 12 BUK7Y13-40B Nexperia N-channel TrenchMOS standard level FET 9. Legal information 9.1 Data sheet status Document status[1][2] Product status[3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. Definition [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nexperia.com. 9.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. Nexperia does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local Nexperia sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 9.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, Nexperia does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — Nexperia reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — Nexperia products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of a Nexperia product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Nexperia accepts no liability for inclusion and/or use of Nexperia products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. Nexperia makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — Nexperia products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nexperia.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by Nexperia. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 9.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 10. Contact information For additional information, please visit: http://www.nexperia.com For sales office addresses, send an email to: salesaddresses@nexperia.com © BUK7Y13-40B_3 Product data sheet Rev. 03 — 26 May 2008 Nexperia B.V. 2017. All rights reserved 11 of 12 Nexperia BUK7Y13-40B N-channel TrenchMOS standard level FET 11. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 9.2 9.3 9.4 10 11 © Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information. . . . . . . . . . . . . . . . . . . . . 11 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Nexperia B.V. 2017. All rights reserved For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 26 May 2008