PHB45NQ15T,118

PHP/PHB45NQ15T N-channel TrenchMOS™ standard level FET Rev. 01 — 8 November 2004 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode field effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features ■ Low on-state resistance ■ Low thermal resistance ■ Fast switching ■ Low gate charge. 1.3 Applications ■ DC-to-DC primary side switching ■ AC-to-DC secondary side rectification. 1.4 Quick reference data ■ VDS ≤ 150 V ■ RDSon ≤ 42 mΩ ■ ID ≤ 45.1 A ■ Qgd = 10.3 nC (typ). 2. Pinning information Table 1: Discrete pinning Pin Description 1 gate 2 drain 3 source mb mounting base; connected to drain Simplified outline [1] Symbol D mb mb G mbb076 2 1 3 1 2 3 SOT78 (TO-220AB) [1] It is not possible to make a connection to pin 2 of the SOT404 package. SOT404 (D2-PAK) S PHP/PHB45NQ15T Philips Semiconductors N-channel TrenchMOS™ standard level FET 3. Ordering information Table 2: Ordering information Type number Package Name Description Version PHP45NQ15T TO-220AB Plastic single-ended package; heatsink mounted; 1 mounting hole; 3 lead TO-220AB SOT78 PHB45NQ15T D2-PAK Plastic single-ended surface mounted package (D2-PAK); 3 leads (one lead SOT404 cropped) 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage (DC) 25 °C ≤ Tj ≤ 175 °C - 150 V VDGR drain-gate voltage (DC) 25 °C ≤ Tj ≤ 175 °C; RGS = 20 kΩ - 150 V VGS gate-source voltage (DC) - ±20 V ID drain current (DC) Tmb = 25 °C; VGS = 10 V; Figure 2 and 3 - 45.1 A Tmb = 100 °C; VGS = 10 V; Figure 2 - 31.9 A IDM peak drain current Tmb = 25 °C; pulsed; tp ≤ 10 µs; Figure 3 - 90.2 A Ptot total power dissipation Tmb = 25 °C; Figure 1 - 230 W Tstg storage temperature −55 +175 °C Tj junction temperature −55 +175 °C Source-drain diode IS source (diode forward) current (DC) Tmb = 25 °C - 45.1 A ISM peak source (diode forward) current Tmb = 25 °C; pulsed; tp ≤ 10 µs - 90.2 A - 180 mJ Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy unclamped inductive load; ID = 19.1 A; tp = 0.1 ms; VDD ≤ 150 V; RGS = 50 Ω; VGS = 10 V; starting at Tj = 25 °C 9397 750 14012 Product data sheet © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 01 — 8 November 2004 2 of 13 PHP/PHB45NQ15T Philips Semiconductors N-channel TrenchMOS™ standard level FET 03aa16 120 03aa24 120 Ider Pder (%) (%) 80 80 40 40 0 0 0 50 100 150 Tmb (°C) 200 P tot P der = ----------------------- × 100% P ° 0 50 100 150 200 Tmb (°C) ID I der = ------------------- × 100% I ° tot ( 25 C ) D ( 25 C ) Fig 1. Normalized total power dissipation as a function of mounting base temperature. Fig 2. Normalized continuous drain current as a function of mounting base temperature. 03ao18 102 tp = 10 µ s ID (A) Limit RDSon = VDS / ID 100 µ s 10 DC 1 ms 10 ms 1 1 102 10 VDS (V) 103 Tmb = 25 °C; IDM is single pulse; VGS = 10 V Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage. 9397 750 14012 Product data sheet © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 01 — 8 November 2004 3 of 13 PHP/PHB45NQ15T Philips Semiconductors N-channel TrenchMOS™ standard level FET 5. Thermal characteristics Table 4: Thermal characteristics Symbol Parameter Conditions Rth(j-mb) thermal resistance from junction to mounting base Figure 4 Rth(j-a) thermal resistance from junction to ambient Min Typ Max Unit - - 0.65 K/W SOT78 vertical in free air - 60 - K/W SOT404 mounted on a printed-circuit board; minimum footprint; vertical in still air - 50 - K/W 5.1 Transient thermal impedance 03ao17 10 Zth(j-mb) (K/W) 1 δ = 0.5 10-1 0.2 0.1 0.05 10-2 δ= P 0.02 tp T single pulse t tp T 10-3 10-5 10-4 10-3 10-2 10-1 1 tp (s) Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration. 9397 750 14012 Product data sheet © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 01 — 8 November 2004 4 of 13 PHP/PHB45NQ15T Philips Semiconductors N-channel TrenchMOS™ standard level FET 6. Characteristics Table 5: Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Tj = 25 °C 150 - - V Tj = −55 °C 135 - - V Static characteristics V(BR)DSS drain-source breakdown voltage VGS(th) IDSS gate-source threshold voltage drain-source leakage current ID = 250 µA; VGS = 0 V ID = 1 mA; VDS = VGS; Figure 9 and 10 Tj = 25 °C 2 3 4 V Tj = 175 °C 1 - - V Tj = −55 °C - - 4.4 V VDS = 120 V; VGS = 0 V Tj = 25 °C - - 1 µA Tj = 175 °C - - 100 µA - 10 100 nA mΩ IGSS gate-source leakage current VGS = ±20 V; VDS = 0 V RDSon drain-source on-state resistance VGS = 10 V; ID = 20 A; Figure 6 and 8 Tj = 25 °C - 34 42 Tj = 175 °C - 91.8 113.4 mΩ - 32 - Dynamic characteristics Qg(tot) total gate charge Qgs gate-source charge Qgd gate-drain (Miller) charge Ciss input capacitance Coss output capacitance Crss reverse transfer capacitance td(on) turn-on delay time tr rise time td(off) tf ID = 25 A; VDS = 75 V; VGS = 10 V; Figure 11 nC - 5.6 - nC - 10.3 - nC VGS = 0 V; VDS = 25 V; f = 1 MHz; Figure 13 - 1770 - pF - 290 - pF - 90 - pF VDS = 75 V; RL = 3 Ω; VGS = 10 V; RG = 5.6 Ω - 11.5 - ns - 22 - ns turn-off delay time - 42 - ns fall time - 31 - ns - 0.88 1.2 V - 115 - ns - 360 - nC Source-drain diode VSD source-drain (diode forward) voltage IS = 25 A; VGS = 0 V; Figure 12 trr reverse recovery time Qr recovered charge IS = 20 A; dIS/dt = −100 A/µs; VGS = 0 V 9397 750 14012 Product data sheet © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 01 — 8 November 2004 5 of 13 PHP/PHB45NQ15T Philips Semiconductors N-channel TrenchMOS™ standard level FET 03ao19 50 10 V 5 V Tj = 25 °C ID (A) 40 03ao20 80 4.8 V RDSon (mΩ) 4.6 V 30 4.4 V 20 4.2 V Tj = 25 °C VGS = 4.4 V 4.6 V 4.8 V 60 5V 40 10 V 20 4V 10 3.8 V VGS = 3.6 V 0 0 0 1 2 3 VDS (V) 4 0 Tj = 25 °C 20 30 40 ID (A) 50 Tj = 25 °C Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values. Fig 6. Drain-source on-state resistance as a function of drain current; typical values. 03ao21 50 ID (A) 10 03al51 3 VDS > ID x RDSon a 2.5 40 2 30 1.5 20 1 10 175 °C 0.5 Tj = 25 °C 0 0 2 4 VGS (V) 6 Tj = 25 °C and 175 °C; VDS > ID × RDSon 0 -75 25 75 125 175 Tj (°C) R DSon a = ---------------------------R DSon ( 25 °C ) Fig 7. Transfer characteristics: drain current as a function of gate-source voltage; typical values. Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature. 9397 750 14012 Product data sheet -25 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 01 — 8 November 2004 6 of 13 PHP/PHB45NQ15T Philips Semiconductors N-channel TrenchMOS™ standard level FET 03aa32 5 VGS(th) (V) 4 max 10-2 3 typ 10-3 2 min 10-4 min typ max 10-5 1 0 -60 03aa35 10-1 ID (A) 10-6 0 60 120 Tj (°C) 0 180 2 4 VGS (V) 6 Tj = 25 °C; VDS = 5 V ID = 1 mA; VDS = VGS Fig 9. Gate-source threshold voltage as a function of junction temperature. Fig 10. Sub-threshold drain current as a function of gate-source voltage. 03ao24 10 VGS (V) ID = 25 A Tj = 25 °C 8 75 V VDS = 30 V 120 V 6 4 2 0 0 10 20 30 QG (nC) 40 ID = 25 A; VDS = 30 V, 75 V and 120 V Fig 11. Gate-source voltage as a function of gate charge; typical values. 9397 750 14012 Product data sheet © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 01 — 8 November 2004 7 of 13 PHP/PHB45NQ15T Philips Semiconductors N-channel TrenchMOS™ standard level FET 03ao22 50 03ao23 104 VGS = 0 V IS (A) C (pF) 40 Ciss 3 10 30 Coss 20 102 10 Tj = 25 °C 175 °C 0 0 0.3 Crss 0.6 0.9 VSD (V) 1.2 Tj = 25 °C and 175 °C; VGS = 0 V 10 10-1 10 VDS (V) 102 VGS = 0 V; f = 1 MHz Fig 12. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values. Fig 13. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values. 9397 750 14012 Product data sheet 1 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 01 — 8 November 2004 8 of 13 PHP/PHB45NQ15T Philips Semiconductors N-channel TrenchMOS™ standard level FET 7. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB E SOT78 A A1 p q mounting base D1 D L2 L1(1) Q b1 L 1 2 3 b c e e 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b b1 c D D1 E e L L1(1) L2 max. p q Q mm 4.5 4.1 1.39 1.27 0.9 0.6 1.3 1.0 0.7 0.4 15.8 15.2 6.4 5.9 10.3 9.7 2.54 15.0 13.5 3.30 2.79 3.0 3.8 3.6 3.0 2.7 2.6 2.2 Note 1. Terminals in this zone are not tinned. OUTLINE VERSION SOT78 REFERENCES IEC JEDEC JEITA 3-lead TO-220AB SC-46 EUROPEAN PROJECTION ISSUE DATE 01-02-16 03-01-22 Fig 14. SOT78 (TO-220AB) package outline. 9397 750 14012 Product data sheet © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 01 — 8 November 2004 9 of 13 PHP/PHB45NQ15T Philips Semiconductors N-channel TrenchMOS™ standard level FET Plastic single-ended surface mounted package (D2-PAK); 3 leads (one lead cropped) SOT404 A A1 E mounting base D1 D HD 2 Lp 1 3 c b e e Q 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b c D max. D1 E e Lp HD Q mm 4.50 4.10 1.40 1.27 0.85 0.60 0.64 0.46 11 1.60 1.20 10.30 9.70 2.54 2.90 2.10 15.80 14.80 2.60 2.20 OUTLINE VERSION REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 01-02-12 04-10-13 SOT404 Fig 15. SOT404 (D2-PAK) package outline. 9397 750 14012 Product data sheet © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 01 — 8 November 2004 10 of 13 PHP/PHB45NQ15T Philips Semiconductors N-channel TrenchMOS™ standard level FET 8. Revision history Table 6: Revision history Document ID Release date Data sheet Change status notice PHP_PHB45NQ15T_1 20041108 Product data sheet - Doc. number Supersedes 9397 750 14012 - 9397 750 14012 Product data sheet © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 01 — 8 November 2004 11 of 13 PHP/PHB45NQ15T Philips Semiconductors N-channel TrenchMOS™ standard level FET 9. Data sheet status Level Data sheet status [1] Product status [2] [3] Definition I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. [3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 10. Definitions customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 12. Trademarks TrenchMOS — is a trademark of Koninklijke Philips Electronics N.V. 11. Disclaimers Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors 13. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com 9397 750 14012 Product data sheet © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 01 — 8 November 2004 12 of 13 Philips Semiconductors PHP/PHB45NQ15T N-channel TrenchMOS™ standard level FET 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 5.1 6 7 8 9 10 11 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Transient thermal impedance . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Contact information . . . . . . . . . . . . . . . . . . . . 12 © Koninklijke Philips Electronics N.V. 2004 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 8 November 2004 Document number: 9397 750 14012 Published in The Netherlands