PSMN3R4-30PL,127

PSMN3R4-30PL N-channel 30 V 3.4 mΩ logic level MOSFET Rev. 01 — 2 November 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits „ High efficiency due to low switching and conduction losses „ Suitable for logic level gate drive sources 1.3 Applications „ DC-to-DC converters „ Motor control „ Load switching „ Server power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - - 30 V - - 100 A - - 114 W -55 - 175 °C - 3.5 4.1 mΩ - 2.8 3.4 mΩ - 8 - nC - 31 - nC - - 200 mJ ID drain current Tmb = 25 °C; VGS = 10 V; see Figure 1 Ptot total power dissipation Tmb = 25 °C; see Figure 2 Tj junction temperature [1] Static characteristics RDSon drain-source on-state VGS = 4.5 V; ID = 10 A; resistance Tj = 25 °C; see Figure 13 VGS = 10 V; ID = 10 A; Tj = 25 °C; see Figure 13 [2] Dynamic characteristics QGD gate-drain charge QG(tot) total gate charge VGS = 4.5 V; ID = 25 A; VDS = 15 V; see Figure 14; see Figure 15 Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy VGS = 10 V; Tj(init) = 25 °C; ID = 100 A; Vsup ≤ 30 V; RGS = 50 Ω; unclamped PSMN3R4-30PL Nexperia N-channel 30 V 3.4 mΩ logic level MOSFET [1] Continuous current is limited by package. [2] Measured 3 mm from package. 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 G gate 2 D drain 3 S source mb D mounting base; connected to drain Graphic symbol mb D G mbb076 S 1 2 3 SOT78 (TO-220AB) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN3R4-30PL TO-220AB plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78 PSMN3R4-30PL Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 — 2 November 2010 © Nexperia B.V. 2017. All rights reserved 2 of 15 PSMN3R4-30PL Nexperia N-channel 30 V 3.4 mΩ logic level MOSFET 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - 30 V VDGR drain-gate voltage Tj ≥ 25 °C; Tj ≤ 175 °C; RGS = 20 kΩ - 30 V VGS gate-source voltage ID drain current -20 20 V VGS = 10 V; Tmb = 100 °C; see Figure 1 [1] - 100 A VGS = 10 V; Tmb = 25 °C; see Figure 1 [1] - 100 A IDM peak drain current pulsed; tp ≤ 10 µs; Tmb = 25 °C; see Figure 3 - 609 A Ptot total power dissipation Tmb = 25 °C; see Figure 2 - 114 W Tstg storage temperature -55 175 °C Tj junction temperature -55 175 °C - 100 A Source-drain diode [1] IS source current Tmb = 25 °C ISM peak source current pulsed; tp ≤ 10 µs; Tmb = 25 °C - 609 A VGS = 10 V; Tj(init) = 25 °C; ID = 100 A; Vsup ≤ 30 V; RGS = 50 Ω; unclamped - 200 mJ Avalanche ruggedness non-repetitive drain-source avalanche energy EDS(AL)S [1] Continuous current is limited by package. 003aad359 200 ID (A) 03aa16 120 Pder (%) 150 80 (1) 100 40 50 0 0 0 Fig 1. 50 100 150 Tmb (°C) 200 Continuous drain current as a function of mounting base temperature PSMN3R4-30PL Product data sheet 0 50 100 150 200 Tmb (°C) Fig 2. Normalized total power dissipation as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. Rev. 01 — 2 November 2010 © Nexperia B.V. 2017. All rights reserved 3 of 15 PSMN3R4-30PL Nexperia N-channel 30 V 3.4 mΩ logic level MOSFET 003aad383 103 10 μs ID (A) Limit RDSon = VDS / ID 102 100 μs (1) DC 10 1 ms 10 ms 100 ms 1 10-1 Fig 3. 1 10 VDS (V) 102 Safe operating area; continuous and peak drain currents as a function of drain-source voltage PSMN3R4-30PL Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 — 2 November 2010 © Nexperia B.V. 2017. All rights reserved 4 of 15 PSMN3R4-30PL Nexperia N-channel 30 V 3.4 mΩ logic level MOSFET 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance from junction to mounting base see Figure 4 - 0.65 1 K/W 003aad007 1 Zth(j-mb) δ = 0.5 (K/W) 0.2 10-1 0.1 0.05 0.02 10-2 δ= P tp T 10-3 single shot t tp T 10-4 10-6 Fig 4. 10-5 10-4 10-3 10-2 10-1 tp (s) 1 Transient thermal impedance from junction to mounting base as a function of pulse duration; typical values PSMN3R4-30PL Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 — 2 November 2010 © Nexperia B.V. 2017. All rights reserved 5 of 15 PSMN3R4-30PL Nexperia N-channel 30 V 3.4 mΩ logic level MOSFET 6. Characteristics Table 6. Characteristics Tested to JEDEC standards where applicable. Symbol Parameter Conditions Min Typ Max Unit 30 - - V Static characteristics V(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C VGS(th) gate-source threshold voltage ID = 250 µA; VGS = 0 V; Tj = -55 °C 27 - - V ID = 1 mA; VDS = VGS; Tj = 25 °C; see Figure 10; see Figure 11 1.3 1.7 2.15 V ID = 1 mA; VDS = VGS; Tj = 175 °C; see Figure 11 0.5 - - V ID = 1 mA; VDS = VGS; Tj = -55 °C; see Figure 11 - - 2.45 V µA IDSS drain leakage current VDS = 30 V; VGS = 0 V; Tj = 25 °C - 0.3 5 VDS = 30 V; VGS = 0 V; Tj = 125 °C - - 100 µA IGSS gate leakage current VGS = 16 V; VDS = 0 V; Tj = 25 °C - 10 100 nA VGS = -16 V; VDS = 0 V; Tj = 25 °C - 10 100 nA drain-source on-state resistance VGS = 10 V; ID = 10 A; Tj = 175 °C; see Figure 12 - - 6.46 mΩ VGS = 4.5 V; ID = 10 A; Tj = 25 °C; see Figure 13 - 3.5 4.1 mΩ VGS = 10 V; ID = 10 A; Tj = 100 °C; see Figure 12 - - 6.1 mΩ VGS = 4.5 V; ID = 10 A; Tj = 175 °C; see Figure 12 - - 7.79 mΩ - 2.8 3.4 mΩ f = 1 MHz - 1 - Ω ID = 25 A; VDS = 15 V; VGS = 10 V; see Figure 14; see Figure 15 - 64 - nC ID = 0 A; VDS = 0 V; VGS = 10 V - 58 - nC ID = 25 A; VDS = 15 V; VGS = 4.5 V; see Figure 14; see Figure 15 - 31 - nC - 12 - nC RDSon VGS = 10 V; ID = 10 A; Tj = 25 °C; see Figure 13 RG gate resistance [1] Dynamic characteristics QG(tot) total gate charge QGS gate-source charge QGS(th) pre-threshold gate-source charge - 6.2 - nC QGS(th-pl) post-threshold gate-source charge - 5.8 - nC QGD gate-drain charge - 8 - nC VGS(pl) gate-source plateau voltage VDS = 15 V; see Figure 14; see Figure 15 - 2.8 - V Ciss input capacitance - 3907 - pF Coss output capacitance VDS = 12 V; VGS = 0 V; f = 1 MHz; Tj = 25 °C; see Figure 16 - 822 - pF Crss reverse transfer capacitance - 356 - pF PSMN3R4-30PL Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 — 2 November 2010 © Nexperia B.V. 2017. All rights reserved 6 of 15 PSMN3R4-30PL Nexperia N-channel 30 V 3.4 mΩ logic level MOSFET Table 6. Characteristics …continued Tested to JEDEC standards where applicable. Symbol Parameter Conditions Min Typ Max Unit td(on) turn-on delay time - 40 - ns tr rise time VDS = 12 V; RL = 0.5 Ω; VGS = 4.5 V; RG(ext) = 4.7 Ω - 73 - ns td(off) turn-off delay time - 59 - ns tf fall time - 28 - ns - 0.7 1.2 V Source-drain diode VSD source-drain voltage IS = 10 A; VGS = 0 V; Tj = 25 °C; see Figure 17 trr reverse recovery time Qr recovered charge IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V; VDS = 12 V [1] - 36 - ns - 28 - nC Measured 3 mm from package. 003aad413 120 ID (A) 10 4.5 3.5 003aad419 7000 C (pF) 6000 Ciss 90 VGS (V) = 3 5000 60 4000 Crss 2.8 3000 30 2.6 2000 2.4 0 1000 0 Fig 5. 1 2 3 VDS (V) Output characteristics: drain current as a function of drain-source voltage; typical values PSMN3R4-30PL Product data sheet 0 4 Fig 6. 3 6 9 VGS (V) 12 Input and reverse transfer capacitances as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 01 — 2 November 2010 © Nexperia B.V. 2017. All rights reserved 7 of 15 PSMN3R4-30PL Nexperia N-channel 30 V 3.4 mΩ logic level MOSFET 003aad420 160 gfs (S) RDSon (mΩ) 120 9 80 6 40 3 0 0 0 Fig 7. 20 40 60 80 ID (A) 100 Forward transconductance as a function of drain current; typical values 003aad415 100 0 Fig 8. ID (A) 10-2 60 10-3 40 10-4 Tj = 175 °C 20 5 10 15 VGS (V) 20 Drain-source on-state resistance as a function of gate-source voltage; typical values 003aab271 10-1 ID (A) 80 min typ 1 2 max 10-5 Tj = 25 °C 10-6 0 0 Fig 9. 003aad421 12 1 2 3 V (V) 4 GS Transfer characteristics: drain current as a function of gate-source voltage; typical values PSMN3R4-30PL Product data sheet 0 VGS (V) 3 Fig 10. Sub-threshold drain current as a function of gate-source voltage All information provided in this document is subject to legal disclaimers. Rev. 01 — 2 November 2010 © Nexperia B.V. 2017. All rights reserved 8 of 15 PSMN3R4-30PL Nexperia N-channel 30 V 3.4 mΩ logic level MOSFET 003a a c982 3 03aa27 2 a VGS (th) (V) max 1.5 2 typ 1 min 1 0.5 0 -60 0 60 120 Tj (°C) 180 Fig 11. Gate-source threshold voltage as a function of junction temperature 0 −60 0 60 120 Tj (°C) 180 Fig 12. Normalized drain-source on-state resistance factor as a function of junction temperature 003aad414 12 VGS (V) = 2.8 RDSon (mΩ) VDS 3 ID 9 VGS(pl) VGS(th) 6 3.5 VGS 4.5 QGS1 3 QGS2 QGS 10 QGD QG(tot) 003aaa508 0 0 20 40 60 80 ID (A) 100 Fig 13. Drain-source on-state resistance as a function of drain current; typical values PSMN3R4-30PL Product data sheet Fig 14. Gate charge waveform definitions All information provided in this document is subject to legal disclaimers. Rev. 01 — 2 November 2010 © Nexperia B.V. 2017. All rights reserved 9 of 15 PSMN3R4-30PL Nexperia N-channel 30 V 3.4 mΩ logic level MOSFET 003aad417 10 VGS (V) 003aad418 104 6V C (pF) 8 Ciss 24 V 6 VDS = 15 V 103 4 Coss Crss 2 102 10-1 0 0 20 40 60 Q (nC) 80 G Fig 15. Gate-source voltage as a function of gate charge; typical values 1 10 VDS (V) 102 Fig 16. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values 003aad416 100 IS (A) 80 60 40 Tj = 175 °C 20 Tj = 25 °C 0 0 0.3 0.6 0.9 VSD (V) 1.2 Fig 17. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values PSMN3R4-30PL Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 — 2 November 2010 © Nexperia B.V. 2017. All rights reserved 10 of 15 PSMN3R4-30PL Nexperia N-channel 30 V 3.4 mΩ logic level MOSFET 7. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78 E A A1 p q mounting base D1 D L1(1) L2(1) Q L b1(2) (3×) b2(2) (2×) 1 2 3 b(3×) c e e 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b b1(2) b2(2) c D D1 E e L L1(1) L2(1) max. p q Q mm 4.7 4.1 1.40 1.25 0.9 0.6 1.6 1.0 1.3 1.0 0.7 0.4 16.0 15.2 6.6 5.9 10.3 9.7 2.54 15.0 12.8 3.30 2.79 3.0 3.8 3.5 3.0 2.7 2.6 2.2 Notes 1. Lead shoulder designs may vary. 2. Dimension includes excess dambar. OUTLINE VERSION SOT78 REFERENCES IEC JEDEC JEITA 3-lead TO-220AB SC-46 EUROPEAN PROJECTION ISSUE DATE 08-04-23 08-06-13 Fig 18. Package outline SOT78 (TO-220AB) PSMN3R4-30PL Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 — 2 November 2010 © Nexperia B.V. 2017. All rights reserved 11 of 15 PSMN3R4-30PL Nexperia N-channel 30 V 3.4 mΩ logic level MOSFET 8. Revision history Table 7. Revision history Document ID Release date Data sheet status Change notice Supersedes PSMN3R4-30PL v.1 20101102 Product data sheet - - PSMN3R4-30PL Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 — 2 November 2010 © Nexperia B.V. 2017. All rights reserved 12 of 15 PSMN3R4-30PL Nexperia N-channel 30 V 3.4 mΩ logic level MOSFET 9. Legal information 9.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nexperia.com. 9.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. Nexperia does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local Nexperia sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between Nexperia and its customer, unless Nexperia and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the Nexperia product is deemed to offer functions and qualities beyond those described in the Product data sheet. 9.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, Nexperia does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. 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Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. Nexperia makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using Nexperia products, and Nexperia accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the Nexperia product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. Nexperia does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using Nexperia products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). Nexperia does not accept any liability in this respect. Notwithstanding any damages that customer might incur for any reason whatsoever, Nexperia’s aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of Nexperia. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Right to make changes — Nexperia reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Terms and conditions of commercial sale — Nexperia products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nexperia.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective PSMN3R4-30PL Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 — 2 November 2010 © Nexperia B.V. 2017. All rights reserved 13 of 15 PSMN3R4-30PL Nexperia N-channel 30 V 3.4 mΩ logic level MOSFET agreement shall apply. Nexperia hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of Nexperia products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond Nexperia’s specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies Nexperia for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond Nexperia’s standard warranty and Nexperia’s product specifications. 9.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Non-automotive qualified products — Unless this data sheet expressly states that this specific Nexperia product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. Nexperia accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without Nexperia’s warranty of the 10. Contact information For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com PSMN3R4-30PL Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 — 2 November 2010 © Nexperia B.V. 2017. All rights reserved 14 of 15 Nexperia PSMN3R4-30PL N-channel 30 V 3.4 mΩ logic level MOSFET 11. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 9.2 9.3 9.4 10 © Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3 Thermal characteristics . . . . . . . . . . . . . . . . . . .5 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . .12 Legal information. . . . . . . . . . . . . . . . . . . . . . . .13 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Contact information. . . . . . . . . . . . . . . . . . . . . .14 Nexperia B.V. 2017. All rights reserved For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 02 November 2010