PSMN013-30MLC,115

PSMN013-30MLC N-channel 30 V 13.6 mΩ logic level MOSFET in LFPAK33 using NextPower Technology 23 February 2018 Product data sheet 1. General description Logic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits • • • Low parasitic inductance and resistance Optimised for 4.5V Gate drive utilising NextPower Superjunction technology Ultra low QG, QGD, & QOSS for high system efficiencies at low and high loads 3. Applications • • • DC-to-DC converters Load switching Synchronous buck regulator 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 °C - - 30 V ID drain current VGS = 10 V; Tmb = 25 °C; Fig. 2 - - 39 A Ptot total power dissipation Tmb = 25 °C; Fig. 1 - - 38 W Tj junction temperature -55 - 175 °C VGS = 4.5 V; ID = 10 A; Tj = 25 °C; Fig. 10 - 14.65 16.9 mΩ VGS = 10 V; ID = 10 A; Tj = 25 °C; Fig. 10 - 11.8 13.6 mΩ Static characteristics RDSon drain-source on-state resistance Dynamic characteristics QGD gate-drain charge ID = 10 A; VDS = 15 V; VGS = 4.5 V; Fig. 12; Fig. 13 - 1 - nC QG(tot) total gate charge ID = 10 A; VDS = 15 V; VGS = 10 V; Fig. 12; Fig. 13 - 8 - nC PSMN013-30MLC Nexperia N-channel 30 V 13.6 mΩ logic level MOSFET in LFPAK33 using NextPower Technology 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 S source 2 S source 3 S source 4 G gate mb D mounting base; connected to drain Graphic symbol D G mbb076 1 2 3 S 4 LFPAK33 (SOT1210) 6. Ordering information Table 3. Ordering information Type number Package PSMN013-30MLC Name Description Version LFPAK33 Plastic single ended surface mounted package (LFPAK33); 8 leads SOT1210 7. Marking Table 4. Marking codes Type number Marking code PSMN013-30MLC M13C30 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj = 25 °C - 30 V VGS gate-source voltage -20 20 V Ptot total power dissipation Tmb = 25 °C; Fig. 1 - 38 W ID drain current VGS = 10 V; Tmb = 25 °C; Fig. 2 - 39 A VGS = 10 V; Tmb = 100 °C; Fig. 2 - 28 A pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 3 - 157 A IDM peak drain current Tstg storage temperature -55 175 °C Tj junction temperature -55 175 °C Tsld(M) peak soldering temperature - 260 °C PSMN013-30MLC Product data sheet All information provided in this document is subject to legal disclaimers. 23 February 2018 © Nexperia B.V. 2018. All rights reserved 2 / 14 PSMN013-30MLC Nexperia N-channel 30 V 13.6 mΩ logic level MOSFET in LFPAK33 using NextPower Technology Symbol Parameter Conditions Min Max Unit VESD electrostatic discharge voltage MM (JEDEC) 100 - V Source-drain diode IS source current Tmb = 25 °C - 34 A ISM peak source current pulsed; tp ≤ 10 µs; Tmb = 25 °C - 157 A ID = 39 A; Vsup ≤ 30 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped; Fig. 4 - 5.6 mJ Avalanche ruggedness EDS(AL)S non-repetitive drainsource avalanche energy 03na19 120 003aaj396 40 ID (A) Pder (%) 30 80 20 40 10 0 0 50 100 150 Tmb (°C) 0 200 Fig. 2. Fig. 1. Normalized total power dissipation as a function of mounting base temperature 0 50 100 150 200 Tmb (° C) Continuous drain current as a function of mounting base temperature 003aaj398 103 ID (A) Limit R DSon = VDS / ID 102 tp =10 µ s 100 µ s 10 DC 1 ms 1 10 ms 100 ms 10-1 10-1 Fig. 3. 1 10 VDS (V) 102 Safe operating area; continuous and peak drain currents as a function of drain-source voltage PSMN013-30MLC Product data sheet All information provided in this document is subject to legal disclaimers. 23 February 2018 © Nexperia B.V. 2018. All rights reserved 3 / 14 PSMN013-30MLC Nexperia N-channel 30 V 13.6 mΩ logic level MOSFET in LFPAK33 using NextPower Technology 003aaj397 102 IAL (A) 10 (1) 1 (2) 10-1 10-3 Fig. 4. 10-2 10-1 tAL (ms) 1 10 Single pulse avalanche rating; avalanche current as a function of avalanche time 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance from junction to mounting base Fig. 5 - 3.8 3.99 K/W 003aaj399 10 Z th(j-mb) (K/W) δ = 0.5 1 0.2 0.1 0.05 P 0.02 10-1 δ= tp T single shot tp 10 Fig. 5. -2 10-6 10-5 10-4 10-3 10-2 t T 10-1 tp (s) 1 Transient thermal impedance from junction to mounting base as a function of pulse duration PSMN013-30MLC Product data sheet All information provided in this document is subject to legal disclaimers. 23 February 2018 © Nexperia B.V. 2018. All rights reserved 4 / 14 PSMN013-30MLC Nexperia N-channel 30 V 13.6 mΩ logic level MOSFET in LFPAK33 using NextPower Technology 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C 30 - - V ID = 250 µA; VGS = 0 V; Tj = -55 °C 27 - - V VGS(th) gate-source threshold voltage ID = 1 mA; VDS=VGS; Tj = 25 °C 1.3 1.66 1.95 V ΔVGS(th)/ΔT gate-source threshold voltage variation with temperature - -4 - mV/K IDSS drain leakage current VDS = 30 V; VGS = 0 V; Tj = 25 °C - - 1 µA VDS = 30 V; VGS = 0 V; Tj = 150 °C - - 100 µA VGS = 16 V; VDS = 0 V; Tj = 25 °C - - 100 nA VGS = -16 V; VDS = 0 V; Tj = 25 °C - - 100 nA VGS = 4.5 V; ID = 10 A; Tj = 25 °C; Fig. 10 - 14.65 16.9 mΩ VGS = 4.5 V; ID = 10 A; Tj = 150 °C; Fig. 10; Fig. 11 - - 28.75 mΩ VGS = 10 V; ID = 10 A; Tj = 25 °C; Fig. 10 - 11.8 13.6 mΩ VGS = 10 V; ID = 10 A; Tj = 150 °C; Fig. 10; Fig. 11 - - 22.95 mΩ f = 1 MHz 0.85 1.7 3.4 Ω ID = 10 A; VDS = 15 V; VGS = 10 V; Fig. 12; Fig. 13 - 8 - nC ID = 10 A; VDS = 15 V; VGS = 4.5 V; Fig. 12; Fig. 13 - 3.7 - nC ID = 0 A; VDS = 0 V; VGS = 10 V - 7.4 - nC ID = 10 A; VDS = 15 V; VGS = 4.5 V; Fig. 12; Fig. 13 - 1.2 - nC - 0.8 - nC Static characteristics V(BR)DSS IGSS RDSon RG gate leakage current drain-source on-state resistance gate resistance Dynamic characteristics QG(tot) total gate charge QGS gate-source charge QGS(th) pre-threshold gatesource charge QGS(th-pl) post-threshold gatesource charge - 0.4 - nC QGD gate-drain charge - 1 - nC VGS(pl) gate-source plateau voltage ID = 10 A; VDS = 15 V; Fig. 12; Fig. 13 - 2.6 - V Ciss input capacitance - 519 - pF Coss output capacitance VDS = 15 V; VGS = 0 V; f = 1 MHz; Tj = 25 °C; Fig. 14 - 131 - pF Crss reverse transfer capacitance - 37 - pF PSMN013-30MLC Product data sheet All information provided in this document is subject to legal disclaimers. 23 February 2018 © Nexperia B.V. 2018. All rights reserved 5 / 14 PSMN013-30MLC Nexperia N-channel 30 V 13.6 mΩ logic level MOSFET in LFPAK33 using NextPower Technology Symbol Parameter Conditions Min Typ Max Unit td(on) turn-on delay time - 7 - ns tr rise time VDS = 15 V; RL = 1.5 Ω; VGS = 4.5 V; RG(ext) = 5 Ω - 9.8 - ns td(off) turn-off delay time - 9.6 - ns tf fall time - 5.5 - ns Qoss output charge VGS = 0 V; VDS = 15 V; f = 1 MHz; Tj = 25 °C - 3.7 - nC Source-drain diode VSD source-drain voltage IS = 10 A; VGS = 0 V; Tj = 25 °C; Fig. 15 - 0.86 1.1 V trr reverse recovery time - 13.4 - ns Qr recovered charge IS = 10 A; dIS/dt = -100 A/µs; VGS = 0 V; VDS = 15 V - 6.6 - nC ta reverse recovery rise time IS = 10 A; dIS/dt = -100 A/µs; VGS = 0 V; VDS = 15 V; Fig. 16 - 8.6 - ns tb reverse recovery fall time - 4.8 - ns 003aaj400 40 10 ID (A) 4.5 003aaj401 50 3.5 RDSon (mΩ ) 40 30 3 30 20 2.8 20 2.6 10 10 VGS (V) =2.4 0 Fig. 6. 2.2 0 1 2 3 VDS (V) 0 4 Output characteristics; drain current as a Fig. 7. function of drain-source voltage; typical values PSMN013-30MLC Product data sheet 0 8 12 VGS (V) 16 Drain-source on-state resistance as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. 23 February 2018 4 © Nexperia B.V. 2018. All rights reserved 6 / 14 PSMN013-30MLC Nexperia N-channel 30 V 13.6 mΩ logic level MOSFET in LFPAK33 using NextPower Technology 003aaj402 50 gfs (S) 003aaj403 40 ID (A) 40 30 30 20 20 10 10 Tj = 150 ° C 0 Fig. 8. 0 10 20 30 ID (A) 0 40 Forward transconductance as a function of drain current; typical values Fig. 9. 2.8 RDSon (mΩ ) 40 0 1 2 3 003aaj407 2 3 a 3.5 4 VGS (V) Transfer characteristics; drain current as a function of gate-source voltage; typical values 003aaj406 50 Tj = 25 ° C 10V 1.5 VGS=4.5V 30 1 20 4.5 10 0 0.5 VGS (V) = 10 5 15 25 35 0 -60 ID (A) 45 Fig. 10. Drain-source on-state resistance as a function of drain current; typical values PSMN013-30MLC Product data sheet 0 60 120 Tj (°C) 180 Fig. 11. Normalized drain-source on-state resistance factor as a function of junction temperature All information provided in this document is subject to legal disclaimers. 23 February 2018 © Nexperia B.V. 2018. All rights reserved 7 / 14 PSMN013-30MLC Nexperia N-channel 30 V 13.6 mΩ logic level MOSFET in LFPAK33 using NextPower Technology 003aaj408 10 VDS VGS (V) ID 8 VGS(pl) 6 6V 24 V VGS(th) VGS 4 QGS2 QGS1 QGS QGD QG(tot) VDS = 15 V 2 003aaa508 0 Fig. 12. Gate charge waveform definitions 0 2 4 6 8 QG 10 (nC) Fig. 13. Gate-source voltage as a function of gate charge; typical values 003aaj409 103 IS (A) Ciss C (pF) 30 Coss 102 20 Crss 10 10-1 003aaj410 40 1 10 VDS (V) 10 10 0 2 Tj = 150° C Tj = 25 ° C 0 0.3 0.6 0.9 VSD(V) 1.2 Fig. 14. Input, output and reverse transfer capacitances Fig. 15. Source current as a function of source-drain as a function of drain-source voltage; typical voltage; typical values values PSMN013-30MLC Product data sheet All information provided in this document is subject to legal disclaimers. 23 February 2018 © Nexperia B.V. 2018. All rights reserved 8 / 14 PSMN013-30MLC Nexperia N-channel 30 V 13.6 mΩ logic level MOSFET in LFPAK33 using NextPower Technology 003aaf444 ID (A) trr ta tb 0 0.25 IRM tb S= t a IRM t (s) Fig. 16. Reverse recovery timing definition PSMN013-30MLC Product data sheet All information provided in this document is subject to legal disclaimers. 23 February 2018 © Nexperia B.V. 2018. All rights reserved 9 / 14 PSMN013-30MLC Nexperia N-channel 30 V 13.6 mΩ logic level MOSFET in LFPAK33 using NextPower Technology 11. Package outline Plastic single ended surface mounted package (LFPAK33); 8 leads E A e1 A c1 b1 L1 SOT1210 D2 mounting base D1 (D) H E1 L 1 4 b e w A A1 C X c Lp y C detail X 0 2.5 5 mm scale Dimensions Unit(1) mm A A1 b(1) max 0.90 0.10 0.35 nom min 0.80 0.00 0.25 b1(1) c c1 2.4 0.20 0.30 2.2 0.10 0.20 D ref 2.60 D1 2.35 1.90 D2 0.50 E(1) E1 3.40 2.45 3.20 2.00 e e1 0.65 0.65 H L L1 Lp 3.40 0.65 0.25 0.50 3.20 0.45 0.13 0.30 w 0.20 0.10 Note 1. Plastic or metal protrusions of 0.15 mm per side are not included. Outline version sot1210_po References IEC JEDEC y JEITA European projection Issue date 14-04-25 16-08-09 SOT1210 Fig. 17. Package outline LFPAK33 (SOT1210) PSMN013-30MLC Product data sheet All information provided in this document is subject to legal disclaimers. 23 February 2018 © Nexperia B.V. 2018. All rights reserved 10 / 14 PSMN013-30MLC Nexperia N-channel 30 V 13.6 mΩ logic level MOSFET in LFPAK33 using NextPower Technology 12. Soldering Footprint information for reflow soldering of LFPAK33 package SOT1210 2.35 2.25 0.635 0.617 0.05 (all around) 0.75 0.62 1.05 1.91 2.47 0.51 3.9 0.51 0.6 0.83 0.4 (x8) solder land solder paste aperture occupied area solder resist 0.65 (x6) 0.3 (x8) 0.25 (x6) Notes : 1. Dimensions in mm sot1210_fr Fig. 18. Reflow soldering footprint for LFPAK33 (SOT1210) PSMN013-30MLC Product data sheet All information provided in this document is subject to legal disclaimers. 23 February 2018 © Nexperia B.V. 2018. All rights reserved 11 / 14 PSMN013-30MLC Nexperia N-channel 30 V 13.6 mΩ logic level MOSFET in LFPAK33 using NextPower Technology for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of Nexperia. 13. Legal information Right to make changes — Nexperia reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Data sheet status Document status [1][2] Product status [3] Objective [short] data sheet Development This document contains data from the objective specification for product development. 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Nexperia accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without Nexperia’ warranty of the product for such automotive applications, use and specifications, and (b) whenever All information provided in this document is subject to legal disclaimers. 23 February 2018 © Nexperia B.V. 2018. All rights reserved 12 / 14 PSMN013-30MLC Nexperia N-channel 30 V 13.6 mΩ logic level MOSFET in LFPAK33 using NextPower Technology customer uses the product for automotive applications beyond Nexperia’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies Nexperia for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond Nexperia’ standard warranty and Nexperia’ product specifications. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. PSMN013-30MLC Product data sheet All information provided in this document is subject to legal disclaimers. 23 February 2018 © Nexperia B.V. 2018. All rights reserved 13 / 14 PSMN013-30MLC Nexperia N-channel 30 V 13.6 mΩ logic level MOSFET in LFPAK33 using NextPower Technology 14. Contents 1. General description......................................................1 2. Features and benefits.................................................. 1 3. Applications.................................................................. 1 4. Quick reference data....................................................1 5. Pinning information......................................................2 6. Ordering information....................................................2 7. Marking.......................................................................... 2 8. Limiting values............................................................. 2 9. Thermal characteristics............................................... 4 10. Characteristics............................................................ 5 11. Package outline........................................................ 10 12. Soldering................................................................... 11 13. Legal information..................................................... 12 © Nexperia B.V. 2018. All rights reserved For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 23 February 2018 PSMN013-30MLC Product data sheet All information provided in this document is subject to legal disclaimers. 23 February 2018 © Nexperia B.V. 2018. All rights reserved 14 / 14