PMZ1000UN,315

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use http://www.nexperia.com Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use salesaddresses@nexperia.com (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - © Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia PMZ1000UN N-channel TrenchMOS standard level FET Rev. 2 — 17 September 2010 Product data sheet BOTTOM VIEW 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits „ Fast switching „ Low conduction losses due to low on-state resistance „ Saves PCB space due to small footprint (90 % smaller than SOT23) „ Suitable for use in compact designs due to low profile (55 % lower than SOT23) 1.3 Applications „ Driver circuits „ Switching in portable appliances 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage 25 °C ≤ Tj ≤ 150 °C - - 30 V ID drain current Tamb = 25 °C; VGS = 10 V; see Figure 1 - - 480 mA Ptot total power dissipation Tamb = 25 °C; see Figure 2 - - 350 mW VGS = 4.5 V; ID = 0.2 A; Tj = 25 °C; see Figure 8 - - 1 Ω Static characteristics RDSon drain-source on-state resistance PMZ1000UN NXP Semiconductors N-channel TrenchMOS standard level FET 2. Pinning information Table 2. Pinning Pin Symbol Description Simplified outline 1 G gate 2 S source 1 3 D drain 2 Graphic symbol D 3 G Transparent top view mbb076 SOT883 (SC-101) S 3. Ordering information Table 3. Ordering information Type number Package Name Description PMZ1000UN SC-101 leadless ultra small plastic package; 3 solder lands; body 1.0 × 0.6 × 0.5 mm SOT883 Version 4. Marking Table 4. Marking codes Type number Marking code PMZ1000UN 6N 5. Limiting values CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards. Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage 25 °C ≤ Tj ≤ 150 °C - 30 V VDGR drain-gate voltage 25 °C ≤ Tj ≤ 150 °C; RGS = 20 kΩ - 30 V VGS gate-source voltage −8 +8 V ID drain current Tamb = 25 °C; VGS = 10 V; see Figure 1 - 480 mA IDM peak drain current Tamb = 25 °C; tp ≤ 10 μs; pulsed - 1.8 A Ptot total power dissipation Tamb = 25 °C; see Figure 2 - 350 mW Tstg storage temperature −55 +150 °C Tj junction temperature −55 +150 °C PMZ1000UN Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 17 September 2010 © NXP B.V. 2010. All rights reserved. 2 of 14 PMZ1000UN NXP Semiconductors N-channel TrenchMOS standard level FET Table 5. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Tamb = 25 °C - 480 mA HBM; C = 100 pF; R = 1.5 kΩ - 60 V MM; C = 200 pF - 30 V Source-drain diode source current IS Electrostatic discharge electrostatic discharge voltage VESD 03aa25 120 Ider (%) 03aa17 120 Pder (%) 80 80 40 40 0 0 0 50 100 150 200 0 50 100 Tsp (°C) P tot P der = ------------------------ × 100 % P tot ( 25°C ) Normalized continuous drain current as a function of solder point temperature PMZ1000UN Product data sheet 200 Tsp (°C) ID I der = -------------------- × 100 % I D ( 25°C ) Fig 1. 150 Fig 2. Normalized total power dissipation as a function of solder point temperature All information provided in this document is subject to legal disclaimers. Rev. 2 — 17 September 2010 © NXP B.V. 2010. All rights reserved. 3 of 14 PMZ1000UN NXP Semiconductors N-channel TrenchMOS standard level FET 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-sp) thermal resistance from junction to solder point see Figure 3 - - 50 K/W Rth(j-a) thermal resistance from junction to ambient - - 355 K/W [1] [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 003aab831 102 Zth(j-sp) (K/W) δ = 0.5 0.2 10 0.1 0.05 δ= P 0.02 single pulse tp T t tp T 1 10-4 Fig 3. 10-3 10-2 10-1 1 tp (s) 10 Transient thermal impedance from junction to solder point as a function of pulse duration PMZ1000UN Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 17 September 2010 © NXP B.V. 2010. All rights reserved. 4 of 14 PMZ1000UN NXP Semiconductors N-channel TrenchMOS standard level FET 7. Characteristics Table 7. Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Tj = 25 °C 30 - - V Tj = −55 °C 27 - - V Static characteristics V(BR)DSS drain-source breakdown voltage VGS(th) IDSS gate-source threshold voltage drain leakage current ID = 10 μA; VGS = 0 V ID = 0.25 mA; VDS = VGS; see Figure 6 and 7 Tj = 25 °C 0.45 0.7 0.95 V Tj = 150 °C 0.25 - - V Tj = −55 °C - - 1.15 V VDS = 30 V; VGS = 0 V Tj = 25 °C - - 1 μA Tj = 150 °C - - 100 μA - 10 100 nA IGSS gate leakage current VGS = ±8 V; VDS = 0 V RDSon drain-source on-state resistance VGS = 4.5 V; ID = 0.2 A; see Figure 8 Tj = 25 °C - - 1 Ω Tj = 150 °C - - 1.5 Ω VGS = 2.5 V; ID = 0.1 A; Figure 8 - - 1.1 Ω VGS = 1.8 V; ID = 0.075 A; Figure 8 - - 1.4 Ω ID = 1 A; VDS = 15 V; VGS = 4.5 V; see Figure 9 and 10 - 0.89 - nC - 0.1 - nC - 0.2 - nC Dynamic characteristics QG(tot) total gate charge QGS gate-source charge QGD gate-drain charge Ciss input capacitance Coss output capacitance Crss reverse transfer capacitance td(on) turn-on delay time tr rise time td(off) turn-off delay time tf fall time VDS = 25 V; VGS = 0 V; f = 1 MHz; see Figure 11 VDS = 15 V; RL = 15 Ω; VGS = 10 V; RG(ext) = 6 Ω - 43 - pF - 7.7 - pF - 4.8 - pF - 4 - ns - 7.5 - ns - 18 - ns - 4.5 - ns - 0.76 1.2 V Source-drain diode VSD source-drain voltage PMZ1000UN Product data sheet IS = 0.3 A; VGS = 0 V; see Figure 11 All information provided in this document is subject to legal disclaimers. Rev. 2 — 17 September 2010 © NXP B.V. 2010. All rights reserved. 5 of 14 PMZ1000UN NXP Semiconductors N-channel TrenchMOS standard level FET 03an94 2.5 4.5 ID (A) 3 03an96 2.5 2.5 ID (A) 2 2 Tj = 150 °C 25 °C 2 1.5 1.5 1.8 1 1 VGS (V) = 1.5 0.5 0.5 0 0 0 0.5 1 1.5 VDS (V) 2 0 Tj = 25 °C Fig 4. 1 2 3 VGS (V) 4 Tj = 25 °C and 150 °C; VDS > ID × RDSon Output characteristics: drain current as a function of drain-source voltage; typical values 03aj65 1.2 VGS(th) (V) Fig 5. Transfer characteristics: drain current as a function of gate-source voltage; typical values 03am43 10−3 ID (A) 0.9 max 10−4 min typ max typ 0.6 10−5 min 0.3 0 −60 0 60 120 180 10−6 0 Tj (°C) Product data sheet 1.2 Tj = 25 °C; VDS = 5 V Gate-source threshold voltage as a function of junction temperature PMZ1000UN 0.8 VGS (V) ID = 1 mA; VDS = VGS Fig 6. 0.4 Fig 7. Sub-threshold drain current as a function of gate-source voltage All information provided in this document is subject to legal disclaimers. Rev. 2 — 17 September 2010 © NXP B.V. 2010. All rights reserved. 6 of 14 PMZ1000UN NXP Semiconductors N-channel TrenchMOS standard level FET 03al00 1.8 03an99 5 ID = 1 A Tj = 25 °C VDS = 15 V VGS (V) a 4 1.2 3 2 0.6 1 0 −60 0 0 60 120 0 180 0.4 0.6 0.8 1 QG (nC) ID = 1 A; VDS = 15 V R DSon a = ----------------------------R DSon ( 25°C ) Fig 8. 0.2 Tj (°C) Normalized drain-source on-state resistance as a function of junction temperature Fig 9. Gate-source voltage as a function of gate charge; typical values 03an98 102 C (pF) VDS Ciss ID 10 VGS(pl) Coss VGS(th) Crss VGS QGS1 QGS2 QGS QGD QG(tot) 1 10-1 1 003aaa508 10 VDS (V) 102 VGS = 0 V; f = 1 MHz Fig 10. Gate charge waveform definitions PMZ1000UN Product data sheet Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 — 17 September 2010 © NXP B.V. 2010. All rights reserved. 7 of 14 PMZ1000UN NXP Semiconductors N-channel TrenchMOS standard level FET 03an97 1 VGS = 0 V IS (A) 0.8 0.6 0.4 0.2 150 °C Tj = 25 °C 0 0 0.2 0.4 0.6 0.8 1 VSD (V) Tj = 25 °C and 150 °C; VGS = 0 V Fig 12. Source current as a function of source-drain voltage; typical values PMZ1000UN Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 17 September 2010 © NXP B.V. 2010. All rights reserved. 8 of 14 PMZ1000UN NXP Semiconductors N-channel TrenchMOS standard level FET 8. Package outline Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm L SOT883 L1 2 b 3 e b1 1 e1 A A1 E D 0 0.5 1 mm scale DIMENSIONS (mm are the original dimensions) UNIT A (1) A1 max. b b1 D E e e1 L L1 mm 0.50 0.46 0.03 0.20 0.12 0.55 0.47 0.62 0.55 1.02 0.95 0.35 0.65 0.30 0.22 0.30 0.22 Note 1. Including plating thickness OUTLINE VERSION REFERENCES IEC JEDEC SOT883 JEITA SC-101 EUROPEAN PROJECTION ISSUE DATE 03-02-05 03-04-03 Fig 13. Package outline SO883 (SC-101) PMZ1000UN Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 17 September 2010 © NXP B.V. 2010. All rights reserved. 9 of 14 PMZ1000UN NXP Semiconductors N-channel TrenchMOS standard level FET 9. Soldering 1.3 0.7 R0.05 (12×) solder lands solder resist 0.9 0.6 0.7 solder paste 0.25 (2×) occupied area 0.3 (2×) 0.3 0.4 (2×) 0.4 Dimensions in mm sot883_fr Fig 14. Reflow soldering footprint SOT883 (SC-101) PMZ1000UN Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 17 September 2010 © NXP B.V. 2010. All rights reserved. 10 of 14 PMZ1000UN NXP Semiconductors N-channel TrenchMOS standard level FET 10. Revision history Table 8. Revision history Document ID Release date Data sheet status Change notice Supersedes PMZ1000UN v.2 20100917 Product data sheet - PMZ1000UN_1 - - Modifications: PMZ1000UN_1 PMZ1000UN Product data sheet • • Modifications of thermal parameters Section 11 “Legal information”: updated 20100224 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 17 September 2010 © NXP B.V. 2010. All rights reserved. 11 of 14 PMZ1000UN NXP Semiconductors N-channel TrenchMOS standard level FET 11. Legal information 11.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 11.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. 11.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. PMZ1000UN Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 17 September 2010 © NXP B.V. 2010. All rights reserved. 12 of 14 PMZ1000UN NXP Semiconductors N-channel TrenchMOS standard level FET Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 11.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — is a trademark of NXP B.V. 12. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com PMZ1000UN Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 17 September 2010 © NXP B.V. 2010. All rights reserved. 13 of 14 PMZ1000UN NXP Semiconductors N-channel TrenchMOS standard level FET 13. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 11.1 11.2 11.3 11.4 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Contact information. . . . . . . . . . . . . . . . . . . . . 13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 17 September 2010 Document identifier: PMZ1000UN