WST05P06

WST05P06 P-Ch MOSFET General Description Product Summery The WST05P06 is the highest performance trench P-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . BVDSS RDSON ID -60V 68mΩ -4.9A Applications The WST05P06 meet the RoHS and Green Product requirement , with full function reliability approved. z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System z Load Switch Features SOT- 23-6L Pin Configuration z Advanced high cell density Trench technology z Super Low Gate Charge (1,2,5,6) DD DD z Excellent CdV/dt effect decline z Green Device Available D S D G D D (3)G ()6 Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TC=25℃ ID@TC=70℃ IDM Rating Units Drain-Source Voltage -60 V Gate-Source Voltage ±20 V 1 -4.9 A 1 -3.3 A -11 A Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current 2 3 PD@TA=25℃ Total Power Dissipation 1.3 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter RθJA Thermal Resistance Junction-Ambient RθJC 1 www.winsok.tw Thermal Resistance Junction-Case Page 1 1 Typ. Max. Unit --- 125 ℃/W --- 80 ℃/W Dec.2014 WST05P06 P-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage Min. Typ. Max. Unit VGS=0V , ID=-250uA -60 --- --- V Reference to 25℃ , ID=-1mA --- -0.014 --- V/℃ VGS=-10V , ID=-4.9A --- 68 85 VGS=-4.5V , ID=-2.5A --- 80 110 -0.5 -0.8 -1.2 V --- 3.95 --- mV/℃ VDS=-48V , VGS=0V , TJ=25℃ --- --- -1 VDS=-48V , VGS=0V , TJ=55℃ --- --- -5 VGS=VDS , ID =-250uA mΩ △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=-5V , ID=-2.9A --- 11 --- S Qg Total Gate Charge (-4.5V) --- 11 15.4 Qgs Gate-Source Charge --- 1.4 2.1 Qgd Gate-Drain Charge --- 2.4 3.2 Td(on) Tr Td(off) Tf VDS=-30V , VGS=-4.5V , ID=-2.9A uA nC --- 8.5 16 Rise Time VDD=-30V , --- 5.8 11 Turn-Off Delay Time VGS=-4.5V , --- 36 65 Fall Time RG=3.3Ω, ID=-2.9A --- 5.6 11 --- 430 560 --- 41 66 --- 25 35 Min. Typ. Max. Unit --- --- -4.9 A --- --- -11 A Turn-On Delay Time Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS=-30V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol Parameter Conditions 1,4 IS Continuous Source Current ISM Pulsed Source Current2,4 VG=VD=0V , Force Current VSD 2 Diode Forward Voltage VGS=0V , IS=-1A , TJ=25℃ --- --- -1 V trr Reverse Recovery Time --- 20 --- nS Qrr Reverse Recovery Charge IF=-2.9A , dI/dt=100A/µs , TJ=25℃ --- 19 --- nC Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper,t