BUK7608-40B,118

BUK7608-40B N-channel TrenchMOS standard level FET Rev. 04 — 24 September 2008 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits „ Low conduction losses due to low on-state resistance „ Suitable for standard level gate drive sources „ Q101 compliant „ Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications „ 12 V loads „ General purpose power switching „ Automotive systems „ Motors, lamps and solenoids 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit - - 40 V - - 75 A VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C ID drain current VGS = 10 V; Tmb = 25 °C; see Figure 1; see Figure 3; Ptot total power dissipation Tmb = 25 °C; see Figure 2 - - 157 W ID = 75 A; Vsup ≤ 40 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped - - 241 mJ VGS = 10 V; ID = 25 A; VDS = 32 V; Tj = 25 °C; see Figure 14 - 12 - nC VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 12; see Figure 11 - 6.6 8 mΩ [1] Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy Dynamic characteristics QGD gate-drain charge Static characteristics RDSon [1] drain-source on-state resistance Continuous current is limited by package. BUK7608-40B Nexperia N-channel TrenchMOS standard level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 G gate 2 D drain 3 S source mb D mounting base; connected to drain Graphic symbol mb [1] D G mbb076 S 2 1 3 SOT404 (D2PAK) [1] It is not possible to make a connection to pin 2. 3. Ordering information Table 3. Ordering information Type number Package Name Description BUK7608-40B D2PAK Plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) Version SOT404 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - 40 V VDGR drain-gate voltage RGS = 20 kΩ - 40 V VGS gate-source voltage -20 20 V ID drain current Tmb = 25 °C; VGS = 10 V; see Figure 1; see Figure 3; [1] - 101 A Tmb = 100 °C; VGS = 10 V; see Figure 1; [1] - 71 A Tmb = 25 °C; VGS = 10 V; see Figure 1; see Figure 3; [2] - 75 A IDM peak drain current Tmb = 25 °C; tp ≤ 10 µs; pulsed; see Figure 3 - 407 A Ptot total power dissipation Tmb = 25 °C; see Figure 2 - 157 W Tstg storage temperature -55 175 °C Tj junction temperature -55 175 °C Source-drain diode IS ISM source current peak source current Tmb = 25 °C; [1] - 101 A Tmb = 25 °C; [2] - 75 A - 407 A tp ≤ 10 µs; pulsed; Tmb = 25 °C © BUK7608-40B_4 Product data sheet Rev. 04 — 24 September 2008 Nexperia B.V. 2017. All rights reserved 2 of 12 BUK7608-40B Nexperia N-channel TrenchMOS standard level FET Table 4. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit - 241 mJ Avalanche ruggedness non-repetitive ID = 75 A; Vsup ≤ 40 V; RGS = 50 Ω; VGS = 10 V; drain-source avalanche Tj(init) = 25 °C; unclamped energy EDS(AL)S [1] Current is limited by power dissipation chip rating. [2] Continuous current is limited by package. 003aac081 120 003aac070 120 Pder (%) ID (A) 80 80 (1) 40 40 0 0 0 50 100 150 0 200 50 100 150 Fig 1. Continuous drain current as a function of mounting base temperature 200 Tmb (°C) Tmb (°C) Fig 2. Normalized total power dissipation as a function of solder point temperature 003aac079 103 Limit RDSon = VDS / ID ID (A) tp = 10 μs 102 100 μs (1) 1 ms 10 10 ms 100 ms DC 1 10−1 1 102 10 VDS (V) Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-s © BUK7608-40B_4 Product data sheet Rev. 04 — 24 September 2008 Nexperia B.V. 2017. All rights reserved 3 of 12 BUK7608-40B Nexperia N-channel TrenchMOS standard level FET 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Rth(j-a) Rth(j-mb) Conditions Min Typ Max Unit thermal resistance from mounted on a printed-circuit board; junction to ambient minimum footprint - 50 - K/W thermal resistance from see Figure 4 junction to mounting base - - 0.95 K/W 003aac080 1 Zth(j − mb) (K / W) δ = 0.5 0.2 10−1 0.1 0.05 0.02 10−2 single pulse δ= P t tp 10−3 10−6 tp T T 10−5 10−4 10−3 10−2 10−1 1 tp (s) Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration © BUK7608-40B_4 Product data sheet Rev. 04 — 24 September 2008 Nexperia B.V. 2017. All rights reserved 4 of 12 BUK7608-40B Nexperia N-channel TrenchMOS standard level FET 6. Characteristics Table 6. Symbol Characteristics Parameter Conditions Min Typ Max Unit drain-source breakdown voltage ID = 0.25 mA; VGS = 0 V; Tj = 25 °C 40 - - V ID = 0.25 mA; VGS = 0 V; Tj = -55 °C 36 - - V gate-source threshold voltage ID = 1 mA; VDS = VGS; Tj = 25 °C; see Figure 9; see Figure 10 2 3 4 V ID = 1 mA; VDS = VGS; Tj = -55 °C; see Figure 9; see Figure 10 - - 4.4 V ID = 1 mA; VDS = VGS; Tj = 175 °C; see Figure 9; see Figure 10 1 - - V VDS = 40 V; VGS = 0 V; Tj = 25 °C - 0.02 1 µA VDS = 40 V; VGS = 0 V; Tj = 175 °C - - 500 µA VDS = 0 V; VGS = 20 V; Tj = 25 °C - 2 100 nA VDS = 0 V; VGS = -20 V; Tj = 25 °C - 2 100 nA VGS = 10 V; ID = 25 A; Tj = 175 °C; see Figure 11; see Figure 12 - - 15.2 mΩ VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 12; see Figure 11 - 6.6 8 mΩ ID = 25 A; VDS = 32 V; VGS = 10 V; Tj = 25 °C; see Figure 14 - 36 - nC - 9 - nC - 12 - nC Static characteristics V(BR)DSS VGS(th) IDSS IGSS RDSon drain leakage current gate leakage current drain-source on-state resistance Dynamic characteristics QG(tot) total gate charge QGS gate-source charge QGD gate-drain charge Ciss input capacitance Coss output capacitance Crss reverse transfer capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz; Tj = 25 °C; see Figure 15 VDS = 30 V; RL = 1.2 Ω; VGS = 10 V; RG(ext) = 10 Ω; Tj = 25 °C - 2017 2689 pF - 486 583 pF - 213 291 pF - 20 - ns - 51 - ns td(on) turn-on delay time tr rise time td(off) turn-off delay time - 20 - ns tf fall time - 33 - ns LD internal drain inductance from drain lead 6 mm from package to center of die; Tj = 25 °C - 4.5 - nH from upper edge of drain mounting base to centre of die; Tj = 25 °C - 2.5 - nH from source lead 6 mm from package to source bond pad; Tj = 25 °C - 7.5 - nH LS internal source inductance Source-drain diode VSD source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C; see Figure 13 - 0.85 1.2 V trr reverse recovery time - 53 - ns Qr recovered charge IS = 20 A; dIS/dt = -100 A/µs; VGS = -10 V; VDS = 20 V; Tj = 25 °C - 44 - nC © BUK7608-40B_4 Product data sheet Rev. 04 — 24 September 2008 Nexperia B.V. 2017. All rights reserved 5 of 12 BUK7608-40B Nexperia N-channel TrenchMOS standard level FET 003aac076 300 20 14 12 ID (A) 003aac073 60 VGS (V) = 10 9.5 gfs (S) 9.0 8.5 200 40 8.0 7.5 7.0 100 20 6.5 6.0 5.5 5.0 4.5 0 0 Fig 5. 2 4 0 6 8 Output characteristics: drain current as a function of drain-source voltage; typical values 003aac077 16 6.0 6.5 7.0 0 10 VDS (V) 8.0 20 40 60 ID (A) Fig 6. Forward transconductance as a function of drain current; typical values 003aac074 100 ID (A) RDSon (mΩ) 75 VGS (V) = 10 12 50 8 25 Tj = 175 °C 20 25 °C 0 4 0 100 200 0 300 2 4 6 Fig 7. Drain-source on-state resistance as a function of drain current; typical values Fig 8. Transfer characteristics: drain current as a function of gate-source voltage; typical values © BUK7608-40B_4 Product data sheet 8 VGS (V) ID (A) Rev. 04 — 24 September 2008 Nexperia B.V. 2017. All rights reserved 6 of 12 BUK7608-40B Nexperia N-channel TrenchMOS standard level FET 003aab852 5 ID (A) VGS(th) (V) 4 typ max 10−3 typ 2 min 10−2 max 3 10−4 min 10−5 1 0 −60 Fig 9. 003aab853 10−1 10−6 0 60 120 0 160 2 4 6 Tj (°C) VGS (V) Gate-source threshold voltage as a function of junction temperature Fig 10. Sub-threshold drain current as a function of gate-source voltage 003aac075 14 RDSon (mΩ) 003aab851 2 a 12 1.5 10 1 8 0.5 6 4 5 10 15 20 VGS (V) Fig 11. Drain-source on-state resistance as a function of gate-source voltage; typical values 0 −60 60 120 180 Tj (°C) Fig 12. Normalized drain-source on-state resistance factor as a function of junction temperature © BUK7608-40B_4 Product data sheet 0 Rev. 04 — 24 September 2008 Nexperia B.V. 2017. All rights reserved 7 of 12 BUK7608-40B Nexperia N-channel TrenchMOS standard level FET 003aac071 100 003aac072 10 VGS (V) IS (A) 8 VDD = 14 V 75 VDD = 32 V 6 50 4 25 0 0.0 Tj = 175 °C 25 °C 2 0 0.3 0.6 0.9 0 1.2 10 20 30 40 QG (nC) VSD (V) Fig 13. Reverse diode current as a function of reverse diode voltage; typical values Fig 14. Gate-source voltage as a function of turn-on gate charge; typical values 003aac078 3000 Ciss C (pF) 2000 Coss 1000 Crss 0 10−2 10−1 1 102 10 VDS (V) Fig 15. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values © BUK7608-40B_4 Product data sheet Rev. 04 — 24 September 2008 Nexperia B.V. 2017. All rights reserved 8 of 12 BUK7608-40B Nexperia N-channel TrenchMOS standard level FET 7. Package outline SOT404 Plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) A A1 E mounting base D1 D HD 2 Lp 1 3 c b e e Q 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b c D max. D1 E e Lp HD Q mm 4.50 4.10 1.40 1.27 0.85 0.60 0.64 0.46 11 1.60 1.20 10.30 9.70 2.54 2.90 2.10 15.80 14.80 2.60 2.20 OUTLINE VERSION REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 05-02-11 06-03-16 SOT404 Fig 16. Package outline SOT404 (D2PAK) © BUK7608-40B_4 Product data sheet Rev. 04 — 24 September 2008 Nexperia B.V. 2017. All rights reserved 9 of 12 BUK7608-40B Nexperia N-channel TrenchMOS standard level FET 8. Revision history Table 7. Revision history Document ID Release date Data sheet status Change notice Supersedes BUK7608-40B_4 20080924 Product data sheet - BUK75_7608-40B_3 Modifications: • Type number BUK7608-40B separated from data sheet BUK75_7608-40B_3 BUK75_7608-40B_3 20071128 Product data sheet - BUK75_7608-40B_2 BUK75_7608-40B_2 20071116 Product data sheet - BUK75_7608_40B-01 BUK75_7608_40B-01 20030319 Product data sheet - - © BUK7608-40B_4 Product data sheet Rev. 04 — 24 September 2008 Nexperia B.V. 2017. All rights reserved 10 of 12 BUK7608-40B Nexperia N-channel TrenchMOS standard level FET 9. Legal information 9.1 Data sheet status Document status [1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nexperia.com. 9.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. Nexperia does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local Nexperia sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 9.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, Nexperia does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — Nexperia reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — Nexperia products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of a Nexperia product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Nexperia accepts no liability for inclusion and/or use of Nexperia products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. Nexperia makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — Nexperia products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nexperia.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by Nexperia. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 9.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 10. Contact information For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com © BUK7608-40B_4 Product data sheet Rev. 04 — 24 September 2008 Nexperia B.V. 2017. All rights reserved 11 of 12 Nexperia BUK7608-40B N-channel TrenchMOS standard level FET 11. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 9.2 9.3 9.4 10 © Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2 Thermal characteristics . . . . . . . . . . . . . . . . . . .4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . .10 Legal information. . . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information. . . . . . . . . . . . . . . . . . . . . . 11 Nexperia B.V. 2017. All rights reserved For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 24 September 2008