2SD998

SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SD998 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 50V(Min) ·Low Collector Saturation Voltage: VCE(sat)= 0.5V(Max)@ IC= 5A APPLICATIONS ·Designed for DC-DC converter, emergency lighting inverter and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 15 V IC Collector Current-Continuous 10 A ICP Collector Current-Peak 25 A IB Base Current-Continuous 4 A PC Collector Power Dissipation @ TC=25℃ 80 W TJ Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature Range SPTECH website：www.superic-tech.com 1 SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SD998 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 80mA 0.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 80mA 1.2 V ICBO Collector Cutoff Current VCB= 100V ; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 15V ; IC= 0 10 μA hFE DC current gain IC= 5A ; VCE= 1V Current-Gain—Bandwidth Product IE= -1A ; VCE= 12V 18 MHz Output Capacitance IE=0 ; VCB= 10V; ftest= 1.0MHz 210 pF 0.5 μs 2.0 μs 0.4 μs fT COB CONDITIONS MIN TYP. MAX 50 UNIT V 60 360 Switching times ton Turn-on Time tstg Storage Time tf IC= 5A , IB1= 80mA; IB2= 80mA RL= 4Ω; VCC= 20V Fall Time SPTECH website：www.superic-tech.com 2