2SB778

SPTECH Product Specification SPTECH Silicon PNP Power Transistor 2SB778 DESCRIPTION ·Low Collector Saturation Voltage :VCE(sat)= -0.5(V)(Max)@IC= -5A ·Good Linearity of hFE APPLICATIONS ·Designed for chopper regulator, switch and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -70 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -10 A ICM Collector Current-Peak -20 A IB Base Current-Continuous -4 A PC Collector Power Dissipation @ TC=25℃ 80 W TJ Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature Range SPTECH website：www.superic-tech.com 1 SPTECH Product Specification SPTECH Silicon PNP Power Transistor 2SB778 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= -25mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -80mA -0.5 V VBE(sat) Base-Emitter Saturation Voltage IC= -5A; IB= -80mA -1.2 V ICBO Collector Cutoff Current VCB= -70V ; IE= 0 -10 μA IEBO Emitter Cutoff Current VEB= -6V; IC= 0 -10 μA hFE DC Current Gain IC= -5A ; VCE= -1V COB Output Capacitance IE= 0 ; VCB= -10V;f= 1.0MHz 400 pF Current-Gain—Bandwidth Product IE= 1A ; VCE= -12V 25 MHz 0.5 μs 0.6 μs 0.3 μs fT CONDITIONS MIN TYP. MAX -50 UNIT V 50 Switching Times ton Turn-on Time tstg Storage Time tf IC= -5A , RL= 4Ω, IB1= -IB2= -80mA,VCC= -20V Fall Time SPTECH website：www.superic-tech.com 2